Datasheet FTS2004 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5949A

FTS2004

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 4V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S2004 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %152A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A4=

)no(SD

2IDV,A4=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS2004]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain

0.125

SANYO : TSSOP8

sgnitaR

nimpytxam

03V
02±V
4A

3.1W

˚C
˚C

0.65

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A4=58S

D

V01=6364mΩ

SG

V4=8587mΩ

SG

zHM1=f,V01=064Fp
zHM1=f,V01=052Fp
zHM1=f,V01=021Fp

3.0

85

14

0.25

tinU

30100TS (KOTO) TA-2144 No.5949-1/4

FTS2004

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A4=

0=58.02.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS09sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS57sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4=51Cn
A4=3Cn
A4=4Cn

tinU

ID-

VDD=15V

3.0V

D

V

S

DS

ID=4A
RL=3.75Ω

FTS2004

V

OUT

–A

D

P.G

6

5

4

3

2

10V

0V

PW=10µs
D.C.≤1%

V

IN

4.0V

6.0V

8.0V

10V

V

IN

3.5V

G

50Ω

Drain Current, I

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VGS=2.5V

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

Ta=

75°C

D

25°C

-

23 5723 5723 57

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

0.01

0.1 1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

VDS=10V

25°C

10

Static Drain-to-Source

2

ID-

V

10

VDS=10V

9

8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

GS

25°C

25°C

-

Ta=

°C

75

Gate-to-Source Voltage, VGS–V

-

R

100

90

80

–mΩ

70

60

DS(on)

50

40

30

20

On-State Resistance, R

10

0

02468101214161820

DS(on)

V

GS

Ta=25°C

I

=4A

D

No.5949-2/4

R

100

90

80

–mΩ

70

60

DS(on)

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

-60 -40 -20 0 20 40 60 80 100 120 160140

DS(on)

=4A,V

I

D

I

D

=4A,V

GS

GS

-

=4V

Ta

=10V

Ambient Temperature, Ta – ˚C

10000

7
5

3
2

1000

7
5

3
2

100

7

Ciss, Coss, Crss – pF

5
3

2

10

0105152520 30

Ciss,Coss,Crss-V

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

DS

FTS2004

f=1MHz

Ciss

Coss

Crss

IF-

V

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.1 0.2 0.3 0.50.4 0.6 1.00.7 0.8 0.9

SD

Ta=75°C

25°C

25°C

-

Diode Forward Voltage, VSD–V

-

V

10

VDS=10V

9

ID=4A

V

8

–

GS

7

6

5

4

3

2

Gate-to-Source Voltage, V

1
0

0 2 4 6 12 1410816

GS

Qg

1000

100

Switching Time, SW Time – ns

1.0

1.6

1.4

–W

D

1.2

1.0

0.8

0.6

VDD=15V

7

VGS=10V

5
3

2

7
5

3
2

10

7
5

3
2

7

0.1

SW Time

t

t

f

t

r

23 2 2357

d(off)

t

d(on)

1.0

-

I

D

57

Drain Current, ID–A

P

-

D

Ta

Mounted on a ceramic board (1000mm

0.1

A S O

ID=4A

23 57

DC operation

23 23557

1.0

100µs

1ms

10ms

100ms

10

5

IDP=25A

3
2

10

7
5

–A

3
2

D

,I

1.0
7
5

3

Operation in this area

2

0.1

Drain Current

10

0.01

is limited by RDS(on).

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

23 57

0.01

Drain-to-Source Voltage, VDS–V

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

2

×0.8mm)

Ambient Temperature, Ta – ˚C

No.5949-3/4

FTS2004

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.5949-4/4