Datasheet FTS2003 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN5993A

FTS2003

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 2.5V drive.

· Mount height of 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S2003

D

D

R
R

Package Dimensions

unit:mm

2147A

0.65

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %152A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

I

V,Am1=

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A4=701S

D

V4=8305mΩ

SG

V5.2=0507mΩ

SG

zHM1=f,V01=005Fp
zHM1=f,V01=082Fp
zHM1=f,V01=051Fp

SSD
SSG

)ffo(SG

1IDV,A4=

)no(SD

2IDV,A2=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

3.0

85

14

0.25

[FTS2003]

6.4

4.5 0.95

(0.95)

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain

0.125

SANYO : TSSOP8

sgnitaR

nimpytxam

Continued on next page.

02V
01±V
4A

3.1W

˚C
˚C

tinU

31000TS (KOTO) TA-2401 No.5993-1/4

FTS2003

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A4=

0=28.02.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS051sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4=22Cn
A4=3Cn
A4=3Cn

tinU

ID-

2.0V

y

fs

VDD=10V

D

V

|

-

ID=4A
RL=2.5Ω

S

DS

I

Ta=–25

D

75°C

V

OUT

TS2003

F

VGS=1.5V

°C

VDS=10V

25°C

ID-

V

10

–A

D

Drain Current, I

VDS=10V

9

8

7
6

5

4

3

2

1
0

GS

25°C

75°C

°C

Ta=–25

Gate-to-Source Voltage, VGS–V

R

I

D

DS(on)

=4A

100

90

80

=2A

I

D

–mΩ

70

60

DS(on)

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

012345678910

-

V

GS

V

IN

4V
0V

V

IN

PW=10µs
D.C.≤1%

G

–A

D

P.G

6

4.0V

5.0V

6.0V

5

8.0V

4

3

2

2.5V

50Ω

3.5V

3.0V

Drain Current, I

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5

Drain-to-Source Voltage, VDS–V

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1
7
5

3
2

Forward Transfer Admittance, |

0.1
23 57 23 57 2 2357

|

0.10.01 1.0 10

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

Ta=25°C

No.5993-2/4

FTS2003

R

100

90

80

–mΩ

70

60

DS(on)

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

-60 -40 -20 0 20 40 60 80 100 120 160140

DS(on)

Ambient Temperature, Ta – ˚C

10000

7
5

3
2

1000

7
5

3
2

100

7

Ciss, Coss, Crss – pF

5
3

2

10

0 2 4 6 8 101214161820 2 4 6 8 12 16181410 22200

Ciss,Coss,Crss-V

Drain-to-Source Voltage, VDS–V

1000

VDD=10V

7

=4V

V

GS

5

3
2

100

7
5

3

Switching Time, SW Time – ns

2

10

723 2 23355757

0.1 1.0 10

SW Time

d(off)

t

t

r

t

d(on)

Drain Current, ID–A

1.6

PD-

I

D

=2A,V

=4A,V

I

D

-

GS

-

=2.5V

GS

Ta

Ta

I

=4V

D

DS

t

f

f=1MHz

Ciss

Coss

Crss

IF-

V

°C

Ta=75

25°C

SD

°C

–25

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2

Diode Forward Voltage, VSD–V

V

–

GS

Gate-to-Source Voltage, V

10

VDS=10V

9

I

8

7

6

5

4

3

2

1
0

D

VGS-

=4A

Qg

Total Gate Charge, Qg – nC

DS

(on).

1.0

A S O

100µs

10ms

100ms

DC operation

10

5

IDP=25A

3
2

10

7
5

3

–A

2

D

,I

1.0
7
5

Operation in this area

3

is limited by R

2

Drain Current

0.1
7
5

Ta=25°C

3

1 Pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01

0.1

ID=4A

23 57 23 57

Drain-to-Source Voltage, VDS–V

1ms

23

1.4

–W

1.3

D

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

020

Mounted on a ceramic board (1000mm

2

×0.8mm)

40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

No.5993-3/4

FTS2003

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.5993-4/4