Datasheet FTD2022 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6462
FTD2022
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2022 Continued on next page.
SSD SSG
D
SG
R
SD
R
SD
WP elcycytud,sµ01 %102A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A5.4=
2)no(IDV,A4= SD
SD SD
Package Dimensions
unit:mm
2155A
[FTD2022]
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
03V 02±V
5.4A
sgnitaR
8.0W
3.1W
˚C ˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A5.4=6.58 S
D
V01=6243m
SG
V5.4=9355m
SG
zHM1=f,V01=035Fp zHM1=f,V01=071Fp zHM1=f,V01=09Fp
30100TS (KOTO) TA-2670 No.6462–1/4
Page 2
FTD2022
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 5.1Cn
egrahC"relliM"niarD-ot-etaGdgQ 0.1Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=15V
V
in
10V
0V
PW=10µs D.C.≤1%
V
in
G
D
ID=4.5A
RL=3.33
V
OUT
)no(tiucriCtseTdeificepSeeS9sn
d
r
)ffo(tiucriCtseTdeificepSeeS14sn
d
f
V
I
DS
S
V,V01=
SD
SG
V,A5.4=
0=97.02.1V
SG
tiucriCtseTdeificepSeeS37sn
tiucriCtseTdeificepSeeS45sn
I,V01=
A5.4=
D
D2S2 S2 G2
sgnitaR
nimpytxam
01Cn
tinU
P.G
10
9
8
7
–A
D
6
5
4
3
Drain Current, I
2
1 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
60 55
50
m
45 40
(on)
DS
35 30 25 20 15 10
Static Drain-to-Source
On-State Resistance, R
5 0
02468101214161820
8.0V
50
10.0V
6.0V
4.5V
I
D
3.5V
S
-- V
FTD2022
DS
3.0V
Drain-to-Source Voltage, VDS –V
RDS(on) -- V
GS
ID=4.5A
4.0A
Gate-to-Source Voltage, VGS –V
VGS=2.5V
IT00557
Ta=25°C
IT00559
D1S1 S1 G1
10
9
8 7
–A
D
6
5
4
3
Drain Current, I
2
1 0
0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0
(Top view)
I
D
-- V
GS
°C
Ta=75
--25°C
25°C
Gate-to-Source Voltage, VGS –V
60
50
m
40
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--50 --25 0 25 50 75 100 125 150
RDS(on) -- Ta
=4.5V
GS
=4.0A, V
I
D
=10.0V
GS
=4.5A, V
I
D
Ambient Temperature, Ta – °C
VDS=10V
IT00558
IT00560
No.6462-2/4
Page 3
100
7 5
3
|–S
fs
2
10
7 5
3 2
1.0 7
5 3
2
Forward Transfer Admittance, | y
0.1
0.1
1000
7 5
3 2
100
7 5
Ciss, Coss, Crss – pF
3 2
10
0 5 10 15 20 25
1000
7 5
3 2
100
7 5
3 2
10
7 5
Switching Time, SW Time – ns
3 2
1.0
0.1
1.5
1.3
–W
Ciss, Coss, Crss -- V
Drain-to-Source Voltage, VDS–V
t
f
23 57
Mounted on a ceramic board (1000mm2×0.8mm)
yfs-- I
75°C
75327532
Drain Current, ID–A
SW Time -- I
td(off)
t
r
Drain Current, ID–A
P
D
D
25°C
1.0
Ciss
Coss
Crss
1.0 10
-- Ta
D
1.0
Total Dissipation
VDS=10V
Ta=--25°C
IT00561
DS
f=1MHz
IT00563
D
VDD=15V VGS=10V
td(on)
23 57
IT00565
FTD2022
10
30
I
-- V
F
10
7 5
3 2
1.0 7
–A
5
F
3 2
0.1 7
5 3
2
0.01
Forward Current, I
7 5
3 2
0.001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
°C
Ta=75
25°C
SD
°C
--25
Diode Forward Voltage, VSD–V
10
VDS=10V
9
ID=4.5A
–V
8
GS
7
6 5
4
3
2
Gate-to-Source Voltage, V
1 0
0123456789
100
7 5
IDP=20A
3 2
10
7
ID=4.5A
5
–A
3
D
2
1.0 7 5
3
Operation in this
2
Drain Current, I
area is limited by RDS(on).
0.1 7
Ta=25°C
5
Single pulse
3
1 unit
2
Mounted on a ceramic board (1000mm2×0.8mm)
0.01 23 57 23 57 7
0.01
Drain-to-Source Voltage, VDS–V
VGS -- Qg
Total Gate Charge, Qg – nC
A S O
<10µs
10ms
100m
s
23 5 723 5
0.1
DC operation
1.0 10
1ms
VGS=0
1.2
IT00562
10
IT00564
100µs
100
IT00566
0.8
1 unit
0.5
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IT00567
No.6462-3/4
Page 4
FTD2022
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6462-4/4
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