Datasheet FTD2019 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6383

FTD2019

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2019 Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,A5=

2)no(IDV,A2=
SD

SD
SD

Package Dimensions

unit:mm

2155A

[FTD2019]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

03V
01±V
5A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=4.03.1V

D

A5=2.1161S

D

V4=9152mΩ

SG

V5.2=3233mΩ

SG

zHM1=f,V01=0031Fp
zHM1=f,V01=082Fp
zHM1=f,V01=061Fp

21400TS (KOTO) TA-2503 No.6383–1/4

FTD2019

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5.2Cn

egrahC"relliM"niarD-ot-etaGdgQ 5Cn

egatloVdrawroFedoiDV

Switching Time Test Circuit Electrical Connection

VDD=15V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

ID=5A

RL=3Ω

D

V

OUT

)no(tiucriCtseTdeificepSeeS81sn

d

r

)ffo(tiucriCtseTdeificepSeeS031sn

d

f

V

I

DS

S

V,V01=

SD

SG

V,A5=

0=8.02.1V

SG

tiucriCtseTdeificepSeeS511sn

tiucriCtseTdeificepSeeS541sn

I,V01=

A5=

D

D2 S2 S2 G2

sgnitaR

nimpytxam

05Cn

tinU

P.G

10

3.5V

9

8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

60

4.0V

0

50Ω

2.5V

I

D

3.0V

S

-- V

FTD2019

DS

1.5V

2.0V

VGS=1.0V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

IT00933

Ta=25°C

D1 S1 S1 G1

I

-- V

10

VDS=10V

9
8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 2.01.4 1.6 1.8

D

GS

Ta=75°C

25°C

--25°C

Gate-to-Source Voltage, VGS –V

50

RDS(on) -- Ta

IT00934

50

mΩ
–

40

(on)

DS

30

ID=2A

20

10

Static Drain-to-Source

On-State Resistance, R

0

0246

5A

Gate-to-Source Voltage, VGS –V

81210

IT00935

mΩ

40

–
(on)

30

DS

20

10

Static Drain-to-Source

On-State Resistance, R

0

- -50

--25 0 25 50 75 100 125 150

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=5A, V

I

D

Ambient Temperature, Ta – °C

IT00936

No.6383-2/4

100

7
5

3
2

|–S

fs

10

7
5

3
2

1.0
7
5

3
2

0.1
7

5
3

Forward Transfer Admittance, | y

2

0.01
2 3 57 2 3 57 23 57 23 57

0.001

1000

VDD=10V

7
5

VGS=4V

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

10

9

–V

8

GS

7

6

5

4
3

2

Gate-to-Source Voltage, V

1
0

1.5

1.3

–W

23 57 23 57

0.1

VDS=10V
ID=5A

0

Mounted on a ceramic board (1000mm2×0.8mm)

yfs -- I

°C

Ta=--25

75

0.01

Drain Current, ID–A

SW Time -- I

td(off)

t

f

Drain Current, ID–A

V

GS

Total Gate Charge, Qg – nC

P

D

D

1.0

Total Dissipation

0.8

C

°

0.1

1.0

t

r

td(on)

-- Qg

-- Ta

FTD2019

I

-- V

F

D

VDS=10V

C

°

25

101.0

IT00937

D

10

IT00939

50452515 20 4030 35510

IT00941

10

7

V

= 0

GS

5
3
2

1.0
7

–A

5

F

3
2

0.1
7

5
3

2

0.01

Forward Current, I

7
5

3
2

0.001

0.2 0.4 0.6 1.00.90.8 1.20.3 0.5 0.7 1.1

°C

Ta=75

25

C

°

--25

Diode Forward Voltage, VSD–V

10000

7
5

3
2

1000

7
5

3
2

100

7

Ciss, Coss, Crss – pF

5
3

2

10

0 5 10 15 20 25 30 35

100

7
5

I

3
2

10

7
5

–A

3

D

2

1.0
7
5

3
2

Drain Current, I

0.1
7

Ta=25°C

5

Single pulse

3

1 unit

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01

0.01 0.1

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

=20A

DP

I

=5A

D

Operation in this
area is limited by RDS(on).

2357 23 57 2357 2357

Drain-to-Source Voltage, VDS–V

SD

C

°

DS

Ciss

Coss

Crss

A S O

µs

<10

1m

s

10ms

100m

DC operation

s

1.0 10 100

IT00938

f=1MHz

IT00940

100µs

IT00942

0.5

1 unit

Allowable Power Dissipation, P

0020 40 60

Ambient Temperature, Ta – °C

80 100 120

140 160

IT00943

No.6383-3/4

FTD2019

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.

PS No.6383-4/4