Datasheet FTD2015 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6393
FTD2015
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2015 Continued on next page.
SSD SSG
D
SG
R
SD
R
SD
WP elcycytud,sµ01 %102A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A4=
2)no(IDV,A4= SD
SD SD
Package Dimensions
unit:mm
2155A
[FTD2015]
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
03V 02±V 4A
sgnitaR
8.0W
3.1W
˚C ˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=03V
SG
V,V03=
0=0.1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A4=5.45.6S
D
V01=7394m
SG
V4=2537m
SG
zHM1=f,V01=055Fp zHM1=f,V01=031Fp zHM1=f,V01=08Fp
30100TS (KOTO) TA-2499 No.6393–1/4
Page 2
FTD2015
D2 S2 S2 G2
D1 S1 S1 G1
(Top view)
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 5.1Cn
egrahC"relliM"niarD-ot-etaGdgQ 2.2Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=15V
ID=4A RL=3.75
D
10V
0V
PW=10µs D.C.≤1%
V
IN
V
IN
G
)no(tiucriCtseTdeificepSeeS01sn
d
r
)ffo(tiucriCtseTdeificepSeeS55sn
d
f
V
DS
OUT
V
I
S
V,V01=
SD
SG
V,A4=
0=18.02.1V
SG
tiucriCtseTdeificepSeeS56sn
tiucriCtseTdeificepSeeS05sn
I,V01=
A4=
D
sgnitaR
nimpytxam
31Cn
tinU
P.G
9
8
7
6
–A
D
5
4
3
Drain Current, I
2
1
0
0
150
50
I
-- V
D
FTD2015
S
DS
4.0V
10.0V
6.0V
3.5V
3.0V
VGS=2.5V
0.2
0.3
0.5 0.70.1 0.4 0.6 0.8 0.9 1.0
Drain-to-Source Voltage, VDS –V
RDS(on) -- V
GS
IT01282
Ta=25°C
I
-- V
D
Ta=75
GS
°
C
--25°C
25°C
10
9
8
7
–A
D
6
5
4 3
Drain Current, I
2
1 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-to-Source Voltage, VGS –V
100
RDS(on) -- Ta
VDS=10V
IT01283
m
(on)
100
4A
DS
I
=2A
D
50
Static Drain-to-Source
On-State Resistance, R
0
0246
Gate-to-Source Voltage, VGS –V
10 12 14 16 18 20
8
IT01284
m
80
– (on)
60
DS
40
20
Static Drain-to-Source
On-State Resistance, R
0
--40 --20 0 20 40 60 80 100
--60
=4V
GS
=4A, V
I
D
=10V
GS
=4A, V
I
D
Ambient Temperature, Ta – °C
120
IT01285
No.6393-2/4
160140
Page 3
FTD2015
100
7 5
3
|–S
2
fs
10
7 5
3 2
1.0 7 5 3 2
0.1 7 5
3
Forward Transfer Admittance, | y
2
0.01
1000
100
Switching Time, SW Time – ns
–V
GS
Gate-to-Source Voltage, V
–W
2 3 57 2 3 57 2 3 57
0.01
7 5
3 2
7 5
3 2
10
7 5
3 2
1.0
0.1
10
9 8
7
6
5
4
3
2 1
0
1.5
1.3
2 3 57 2 3 57
VDS=10V ID=4A
04268101214
Mounted on a ceramic board (1000mm2×0.8mm)
yfs -- I
Ta=--25°C
C
°
25
0.1
Drain Current, ID–A
SW Time -- I
t
(off)
d
t
f
Drain Current, ID–A
V
GS
Total Gate Charge, Qg – nC
P
D
D
1.0
Total Dissipation
75
C
°
1.0
-- Qg
-- Ta
D
VDS=10V
1.0
10
IT01286 IT01287
D
VDD=15V VGS=10V
t
r
td(on)
10
IT01288
IT01290
I
-- V
F
C
°
Ta=75
0.5
0.40.3
1.0
–A
F
0.1
0.01
Forward Current, I
0.001
10
7 5
3 2
7 5
3
2
7 5
3
2
7 5
3 2
0 0.80.70.6 0.9 1.00.20.1
V
= 0
GS
Diode Forward Voltage, VSD–V
10000
7 5
3 2
1000
7 5
3 2
100
7
Ciss, Coss, Crss – pF
5 3
2
10
0510
100
7 5
3
I
2
10
7
I
–A
5 3
D
2
1.0 7 5
3 2
Drain Current, I
0.1 7
Ta=25°C
5
Single pulse
3 2
1 unit
Mounted on a ceramic board (1000mm2×0.8mm)
0.01
0.01
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
Drain-to-Source Voltage, VDS–V
15
A S O
=20A
DP
=4A
D
DC operation
Operation in this area is limited by RDS(on).
23 57 23 57 23 57
0.1 1.0
Drain-to-Source Voltage, VDS–V
SD
C
C
°
°
25
--25
DS
20 25 30
<10µs
100µs
1ms
10ms
100ms
10 100
f=1MHz
IT01289
23 57
IT01291
0.8
0.5
Allowable Power Dissipation, P
0
20 40 60
0
Ambient Temperature, Ta – °C
1 unit
80
100 120
140 160
IT01292
No.6393-3/4
Page 4
FTD2015
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6393-4/4
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