Datasheet FTD2014 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6267

FTD2014

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2014 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A4=

)no(SD

2IDV,A2=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2155A

[FTD2014]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

02V
01±V
4A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A4=701S

D

V4=2324mΩ

SG

V5.2=2495mΩ

SG

zHM1=f,V01=007Fp
zHM1=f,V01=002Fp
zHM1=f,V01=051Fp

21400TS (KOTO) TA-2166 No.6267–1/4

FTD2014

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 4.1Cn

egrahC"relliM"niarD-ot-etaGdgQ 2.3Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01=

SD

SG

V,A4=

0=58.02.1V

SG

Switching Time Test Circuit Electrical Connection

VDD=10V

V

IN
4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=4A
RL=2.5Ω

V

OUT

tiucriCtseTdeificepSeeS41sn
tiucriCtseTdeificepSeeS031sn
tiucriCtseTdeificepSeeS38sn
tiucriCtseTdeificepSeeS011sn

I,V01=

A4=

D

D2 G2S2 S2

sgnitaR

nimpytxam

42Cn

tinU

P.G

50Ω

12

4.0V

10

2.5V

3.5V

ID -- V

2.0V

FTD2014

S

DS

Ta=25°C

3.0V

8

–A

D

6

1.5V

4

Drain Current, I

2

VGS=1.0V

0

02.0

90

80

mΩ

70

–

60

DS(on)

50

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0.5 1.0 1.5 2.5 3.0

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

4A

ID=2A

2406108

Gate-to-Source Voltage, VGS –V

IT00425

Ta=25°C

IT00427

D1 G1

S1 S1

12

VDS=10V

10

8

–A

D

6

4

Drain Current, I

2

0

0.2 0.6 1.61.00.8

0

0.4 1.41.2 1.8 2.0

Gate-to-Source Voltage, VGS –V

60

50

mΩ
–

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--2 5--5 0

(Top view)

I

-- V

D

25°C

GS

Ta=75°C

--25°C

RDS(on) -- Ta

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=4A, V

I

D

0

Ambient Temperature, Ta – °C

IT00426

150125100755025

IT00428

No.6267-2/4

100

7
5

|–S

fs

3
2

10

7
5

3
2

|yfs |-I

25°C

D

°C

Ta=--25

75°C

Forward Transfer Admittance, | y

1.0
23 57 23 57

Drain Current, ID–A

10000

1000

100

Ciss, Coss, Crss – pF

Ciss, Coss, Crss -- V

7
5

3
2

7
5

3
2

7
5

3
2

10

0

Ciss

Coss

Crss

624 8 1410 12 16

DS

Drain-to-Source Voltage, VDS–V

td(off)

r

SW Time -- I

td(on)

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

0.1 1.0 10

t

D

23 5723 57

Drain Current, ID–A

P

-- Ta

1.4

1.2

–W

D

1.0

0.8

Mounted on a ceramic board (1000mm2×0.8mm)

D

Total Dissipation

VDS=10V

IT00429

f=1MHz

18

IT00431

VDD=10V
VGS=4V

t

IT00433

FTD2014

100.1 1.0

20

f

Ta=75°C

IF -- V

25°C

--25°C

0.5 0.7 0.8 0.9 1.0 1.10.2

100

10

–A

F

1.0

0.1

Forward Current, I

0.01

0.001

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

0.3 0.6 1.20.4

Diode Forward Voltage, VSD–V

V

-- Qg

10

–V

GS

Gate-to-Source Voltage, V

VDS=10V

9

ID=4A

8
7

6

5

4
3

2

1

0

5252015100

GS

Total Gate Charge, Qg – nC

100

7
5

3

I

DP

2

10

7

I

D

5

–A

3

D

2

1.0
7

5
3

Operation in this

2

area is limited by RDS(on)

Drain Current, I

0.1
7
5

Ta=25˚C

3

1 pulse, 1 unit

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01

0.01

0.1 1.0 10010

Drain-to-Source Voltage, VDS–V

A S O

DC operation

SD

100ms

<100

10ms

VGS=0

IT00430

IT00432

µs

1ms

23 7523 7523 7523 75

IT00434

0.6

0.4

0.2

1 unit

Allowable Power Dissipation, P

0

0 80 160

10020 40 60 120 140

Ambient Temperature, Ta – °C

IT00435

No.6267-3/4

FTD2014

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.

PS No.6267-4/4