Datasheet FTD2011 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6072A

FTD2011

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2011 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A4=

)no(SD

2IDV,A2=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2155A

[FTD2011]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

02V
01±V
5A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=5.03.1V

D

A5=821S

D

V4=2282mΩ

SG

V5.2=0304mΩ

SG

zHM1=f,V01=009Fp
zHM1=f,V01=062Fp
zHM1=f,V01=002Fp

52200TS (KOTO) TA-2077 No.6072–1/4

FTD2011

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5.1Cn

egrahC"relliM"niarD-ot-etaGdgQ 6Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01=

SD

SG

V,A5=

0=28.02.1V

SG

Switching Time Test Circuit Electrical Connection

D

VDD=10V

ID=4A

RL=2.5Ω

V

OUT

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

tiucriCtseTdeificepSeeS51sn
tiucriCtseTdeificepSeeS051sn
tiucriCtseTdeificepSeeS001sn
tiucriCtseTdeificepSeeS051sn

I,V01=

A4=

D

D2 S2 S2 G2

sgnitaR

nimpytxam

23Cn

tinU

P.G

10

9

8

7

–A

6

D

5

4

3

Drain Current, I

2

1
0

5

3

|–S

2

fs

10

7
5

50Ω

S

FTD2011

ID-

A11947

V

DS

3.5V

3.0V

4.0V

2.5V

2.0V

0.5 1.0 1.5 2.0 2.5 3.0

0

Drain-to-Source Voltage, VDS –V

|yfs |-I

D

°C

Ta=-25

75°C

1.5V

VGS=1.0V

VDS=10V

25°C

D1 S1 S1 G1

A11948

10

VDS=10V

9

8

7

–A

6

D

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.80.6 1.0 1.2 2.01.6 1.81.4

ID-

Gate-to-Source Voltage, VGS –V

R

70

60

mΩ
–

50

DS(on)

40

30

I

=2A

D

DS(on)

I

=5A

D

V

-

GS

°C

75°C

Ta=-25

25°C

V

GS

Ta=25°C

3

2

Forward Transfer Admitance, | y

1.0
23 57 2 2357

1.00.1 10

Drain Current, ID–A

20

10

Static Drain-to-Source

On-State Resistance, R

0

0

24681012

Gate-to-Source Voltage, VGS –V

No.6072-2/4

60

mΩ

50

–

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

-60

-40 -20 0 20 40 60 80 100 120 160140

10000

1000

100

Ciss, Coss, Crss – pF

10

7
5

3
2

7
5

3
2

7
5

3
2

02

Ciss, Coss, Crss-V

4 6 8 10 12 14 16 18 20

Drain-to-Source Voltage,VDS–V

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

1.6

23 57 2 23577

0.1 1.0 10 0.1 1.0 10

R

DS(on)

I

D

I

=2A,V

=4A,V

D

-

Ta IF-

=2.5V

GS

=4V

GS

Ambient Temperature, Ta – °C

DS

SW Time

Drain Current, ID–A

P

-

I

D

t

f

t

r

t

d(on)

-

D

Ta

FTD2011

f=1MHz

Ciss

Coss

Crss

VDD=10V

t

d(off)

V

100

7
5

3
2

10

7

–A

5

F

3
2

1.0
7
5

3
2

0.1

Forward Current, I

7
5

3
2

0.01

0.2 0.4 0.6 0.8 1.0 1.20.3 0.5 0.7 0.9 1.1

Ta=75

SD

°C

25°C

-25°C

Diode Forward Voltage, VSD–V

-

10

–V

GS

Gate-to-Source Voltage, V

VDS=10V

9

8

7

6

5

4

3

2

1
0

V

GS

4 8 12 16 20 24 28 320

Qg

Total Gate Charge, Qg – nC

5
3

2

10

7

ID=5A

5
3

–A

2

D

1.0
7
5

3

Operation in this area

2

is limited by RDS(on).

0.1

Drain Current, I

7

Ta=25˚C

5

1pulse

3

1unit

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01
23 57 2 23357

A S O

10ms

100m

s

DC operation

Drain-to-Source Voltage,VDS–V

<10µs

1ms

1.4

–W

1.3

D

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

Mounted on a ceramic board (1000mm2×0.8mm)

0

0 20 40 60 80 100 120 140 160

Total Dissipation

1 unit

Ambient Temperature, Ta – °C

No.6072-3/4

FTD2011

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2000. Specifications and information herein are subject to
change without notice.

PS No.6072-4/4