Datasheet FTD2007 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6430
FTD2007
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD SSG
D
PD D T
Package Dimensions
unit:mm
2155A
[FTD2007]
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
001V 02±V
8.0A
WP elcycytud,sµ01 %12.3A
Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm
2
×0.8mm)
6.0W
8.0W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R R
SG
SD SD SD
SSD)RB( SSD SSG
)ffo(VSDI,V01=
1)no(IDV,Am004=
2)no(IDV,Am004=
3)no(IDV,Am004=
I
V,Am1=
D
V
SD
V
SG
0=001V
SG
V,V001=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=8.00.2V
D
Am004=0.15.1S
D
V01=6.08.0
SG
V4=56.059.0
SG
V3=7.00.1
SG
nimpytxam
Marking : D2007 Continued on next page.
30300TS (KOTO) TA-2501 No.6430–1/4
sgnitaR
tinU
Ω Ω Ω
Page 2
FTD2007
D2S2 S2 G2
D1S1 S1 G1
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 6.0Cn
egrahC"relliM"niarD-ot-etaGdgQ 41.1Cn
egatloVdrawroFedoiDV
d
r
d
f
DS
SD SD SD
)no(tiucriCtseTdeificepSeeS8sn
)ffo(tiucriCtseTdeificepSeeS04sn
V
SD
I
S
Switching Time Test Circuit Electrical Connection
VDD=50V
V
IN
10V
0V
PW=10µs D.C.≤1%
V
IN
G
D
ID=400mA
RL=125
V
OUT
zHM1=f,V05=051Fp zHM1=f,V05=03Fp zHM1=f,V05=5Fp
tiucriCtseTdeificepSeeS4sn
tiucriCtseTdeificepSeeS52sn
V,V01=
V,Am008=
I,V01=
SG
0=57.02.1V
SG
Am008=
D
sgnitaR
nimpytxam
2.5Cn
tinU
P.G
1.6
50
I
D
8.0V
1.4
1.2
–A
1.0
D
0.8
0.6
Drain Current, I
0.4
0.2
0
0
0.4
6.0V
10.0V
0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8
Drain-to-Source Voltage, VDS –V
1.4
1.2
1.0
RDS(on) -- V
(on)
DS
0.8
0.6
0.4
0.2
Static Drain-to-Source
On-State Resistance, R
0
01234 56
Gate-to-Source Voltage, VGS –V
S
-- V
FTD2007
DS
3.0V
4.0V
GS
2.5V
2.0V
VGS=1.5V
IT01119
Ta=25°C ID=400mA
78910
IT01121
I
-- V
2.0
VDS=10V
1.8
1.6
1.4
–A
1.2
D
1.0
0.8
0.6
Drain Current, I
0.4
0.2 0
0 0.5 1.0 1.5 2.0 2.5 3.0
D
25°C
GS
Ta=75°C
--25°C
Gate-to-Source Voltage, VGS –V
1.6
1.4
1.2
– (on)
1.0
DS
0.8
0.6
0.4
0.2
Static Drain-to-Source
On-State Resistance, R
0
--40 --20 0 20 40 60 80 100 120 140 160
- -60
RDS(on) -- Ta
=3V
GS
=400mA, V
I
D
=400mA, V
I
D
=400mA, V
I
D
GS
=4V
GS
=10V
Ambient Temperature, Ta – °C
IT01120
IT01122
No.6430-2/4
Page 3
FTD2007
10
7 5
|–S
fs
3 2
1.0 7 5
3 2
yfs -- I
Ta=--25
75°C
D
°C
Forward Transfer Admittance, | y
0.1
1000
100
10
Switching Time, SW Time – ns
1.0
–V
GS
Gate-to-Source Voltage, V
1.0
–W
0.8
D
0.01
23 57
Drain Current, ID–A
23 57 23
0.1
SW Time -- I
7 5
3 2
7 5
3 2
7 5
3 2
357 2 2357
10
VDS=10V
9
ID=800mA
8
7
6
5
4 3
2
1 0
0
t
f
t
r
0.1
Drain Current, ID–A
VGS -- Qg
Total Gate Charge, Qg – nC
P
-- Ta
D
Mounted on a ceramic board (1000mm2×0.8mm)
D
td(off)
td(on)
25°C
1.0
VDS=10V
IT01123
VDD=50V VGS=10V
1.0
IT01125
IT01127
I
-- V
F
10
7 5
3 2
–A
1.0
F
7 5
3 2
0.1 7
Forward Current, I
5 3
2
0.01 0 0.3 0.90.6 1.2 1.5
1000
7 5
3 2
100
7 5
3 2
10
7
Ciss, Coss, Crss – pF
5 3
2
1.0 0
10
10
7 5
IDP=3.2A
3 2
ID=0.8A
1.0 7 5
–A
3
D
2
0.1 7 5
3
Operation in this area is
2
limited by RDS(on).
Drain Current, I
0.01 7
Ta=25°C
5
Single pulse
3
1 unit
2
Mounted on a ceramic board (1000mm2×0.8mm)
624513
0.001 23 57 23 57 23 57
0.1 1.0 10
0.8
°C
°C
Ta=75
25
Diode Forward Voltage, VSD–V
Ciss, Coss, Crss -- V
20 30
Drain-to-Source Voltage, VDS–V
Drain-to-Source Voltage, VDS–V
PD(FET1) -- PD(FET2)
SD
V
GS
°C
--25
DS
f=1MHz
Ciss
Coss
Crss
40 10050 60 70 80 90
A S O
1ms
10ms
100ms
DC operation
= 0
IT01124
IT01126
100µs
100
IT01128
2
–W
D
0.6
0.6
0.4
0.2
Total Dissipation
1 unit
Allowable Power Dissipation, P
0020 40
60
Ambient Temperature, Ta – °C
80 100 120
140 160
IT01129
0.4
0.2
0
Allowable Power Dissipation (FET1), P
0
0.2 0.4
Allowable Power Dissipation (FET2), PD–W
0.6
0.8
IT01130
No.6430-3/4
Page 4
FTD2007
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6430-4/4
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