Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6429
FTD2005
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2005 Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %14A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A1=
2)no(IDV,A5.0=
SD
SD
SD
Package Dimensions
unit:mm
2155A
[FTD2005]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
02V
01±V
1A
sgnitaR
8.0W
0.1W
˚C
˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1=4.03.1V
D
A1=8.16.2S
D
V4=002062mΩ
SG
V5.2=062063mΩ
SG
zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp
30300TS (KOTO) TA-2054 No.6429–1/4
Page 2
FTD2005
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 1Cn
egrahC"relliM"niarD-ot-etaGdgQ 2Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=10V
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=1A
RL=10Ω
V
OUT
)no(tiucriCtseTdeificepSeeS01sn
d
r
)ffo(tiucriCtseTdeificepSeeS02sn
d
f
V
I
DS
S
V,V01=
SD
SG
V,A1=
0=0.12.1V
SG
tiucriCtseTdeificepSeeS22sn
tiucriCtseTdeificepSeeS91sn
I,V01=
A1=
D
D2S2 S2 G2
sgnitaR
nimpytxam
6Cn
tinU
P.G
2.0
1.8
1.6
1.4
–A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0
500
450
mΩ
400
–
350
(on)
300
DS
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
01234 56
50Ω
I
8.0V
6.0V
4.0V
10.0V
0.2
Drain-to-Source Voltage, VDS –V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
RDS(on) -- V
1.0A
ID=0.5A
Gate-to-Source Voltage, VGS –V
D
S
-- V
FTD2005
DS
3.0V
2.5V
2.0V
VGS=1.5V
IT00977
GS
Ta=25°C
78910
IT00979
D1S1 S1 G1
I
-- V
2.0
1.8
1.6
1.4
–A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
500
450
mΩ
400
–
350
(on)
300
DS
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
- -60
Gate-to-Source Voltage, VGS –V
--40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
D
25°C
RDS(on) -- Ta
=0.5A, V
I
D
I
D
°C
75
Ta=--25°C
=1.0A, V
GS
GS
=2.5V
GS
=4.0V
VDS=10V
IT00978
IT00980
No.6429-2/4
Page 3
10
7
5
|–S
fs
3
2
1.0
7
5
3
2
yfs -- I
°C
Ta=--25
75°C
Forward Transfer Admittance, | y
0.1
100
0.01
7
5
3
2
23 57
Drain Current, ID–A
SW Time -- I
0.1
td(off)
FTD2005
D
VDS=10V
25°C
23 57 23
D
1.0
VDD=10V
VGS=4V
t
r
t
f
IT00981
I
-- V
F
10
7
5
3
2
1.0
7
–A
5
F
3
2
0.1
7
5
3
2
0.01
Forward Current, I
7
5
3
2
0.001
0 0.3 0.90.6 1.2 1.5
1000
7
5
3
2
Diode Forward Voltage, VSD–V
Ciss, Coss, Crss -- V
Ta=75
SD
°C
25°C
--25°C
DS
V
GS
IT00982
f=1MHz
= 0
10
7
5
3
Switching Time, SW Time – ns
2
1.0
0.1 1.0
10
VDS=10V
9
ID=1A
8
–V
7
GS
6
5
4
3
2
Gate-to-Source Voltage, V
1
0
0
1.2
–W
1.0
23 57 23
Drain Current, ID–A
V
-- Qg
GS
Total Gate Charge, Qg – nC
P
-- Ta
D
Mounted on a ceramic board (1000mm2×0.8mm)
D
0.8
0.6
Total Dissipation
1 unit
0.4
td(on)
IT00983
IT00985
100
7
5
Ciss, Coss, Crss – pF
3
2
0102
10
7
5
3
2
1.0
–A
7
D
5
3
2
Operation in this area is
0.1
limited by RDS(on).
7
Drain Current, I
5
Ta=25°C
3
Single pulse
2
1 unit
Mounted on a ceramic board (1000mm2×0.8mm)
624513
0.01
0.1 1.0 10
1.0
46
Drain-to-Source Voltage, VDS–V
IDP=4A
Drain-to-Source Voltage, VDS–V
PD(FET1) -- PD(FET2)
82010 12 14 16 18
A S O
ID=1A
Ciss
Coss
Crss
100ms
DC operation
23 5723 57
10ms
1ms
IT00984
100µs
23 5
IT00986
–W
D
0.8
0.6
0.4
Mounted on a ceramic board (1000mm
2
×0.8mm)
0.2
Allowable Power Dissipation, P
0020 40
60
Ambient Temperature, Ta – °C
80 100 120
140 160
IT00987
0.2
0
Allowable Power Dissipation (FET1), P
0
0.2 0.4
Allowable Power Dissipation (FET2), PD–W
0.6
0.8 1.0
IT00988
No.6429-3/4
Page 4
FTD2005
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6429-4/4
Loading...