Datasheet FTD1014 Datasheet (SANYO)

Page 1
Ordering number : ENN7020
FTD1014
P-Channel Silicon MOSFET
FTD1014
Load S / W Use
[FTD1014]
0.425
0.5
6.4
4.5 0.95
Features
Low ON-resistance.
2.5V drive.
Mounting height 1.1mm.
Composite type, facilitating high-density mounting.
Load Switching Applications
Package Dimensions
unit : mm
2155A
3.0
0.65
85
1 : Drain1 2 : Source1 3 : Source1
0.125
4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
SANYO : TSSOP8
Specifications
14
0.25
(0.95)
1.0
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Total Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D T
PW10µs, duty cycle1% --15 A Mounted on a ceramic board (1000mm2✕0.8mm) 1unit Mounted on a ceramic board (1000mm2✕0.8mm)
--20 V
±10 V
--2 A
0.8 W
1.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=--1mA, VGS=0 --20 V VDS=--20V, VGS=0 --1 µA VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--2A 4.2 6 S
Marking : D1014 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
73001 TS IM TA-2736
No.7020-1/4
Page 2
FTD1014
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=--10V, f=1MHz 820 pF
Output Capacitance Coss VDS=--10V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 100 pF Turn-ON Delay Time td(on) See specified Test Circuit 17 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 66 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 17 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 1.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 2 nC Diode Forward Voltage V
RDS(on) 1 ID=--2A, VGS=--4V 68 89 m RDS(on) 2 ID=--2A, VGS=--2.5V 92 130 m
See specified Test Circuit 60 ns
r
See specified Test Circuit 56 ns
f
SD
IS=--2A, VGS=0 --0.8 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit Electrical Connection
V
IN
0V
--4V V
IN
PW=10µs D.C.1%
P.G
--6
I
D
G
50
-- V
DS
VDD= --10V
ID= --2A RL=5
D
S
V
OUT
FTD1014
D2 S2 S2 G2
D1 S1 S1 G1
--6
VDS= --10V
--6.0V
--4.0V
--5
--10.0V
--3.0V
--5
--2.5V
--4
-- A D
--3
--2
--2.0V
Drain Current, I
--1
0
0 --0.2--0.1 --0.4--0.3 --0.6--0.5 --0.8--0.7 --1.0--0.9
Drain-to-Source V oltage, VDS -- V
200
RDS(on) -- V
GS
VGS= --1.5V
IT00392
Ta=25°C
--4
-- A D
--3
--2
Drain Current, I
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5
Gate-to-Source V oltage, VGS -- V
200
ID= --2.0A
I
-- V
D
GS
--25°C
°C
Ta=75
°C
25
RDS(on) -- Ta
IT00393
150
(on) -- m
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
0--5--1 --4 --7--2 --6--3 --8 --9 --10
Gate-to-Source V oltage, VGS -- V
IT00394
150
(on) -- m
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
GS
V
V
GS
= --2.5V, I
= --4.0V, I
= --2.0A
D
= --2.0A
D
Ambient Temperature, Ta -- °C
IT00395
No.7020-2/4
Page 3
FTD1014
100
7 5 3 2
10
7 5
3 2
1.0 7
Ta= --25°C
5 3
2
0.1 7 5
3 2
Forward Transfer Admittance, yfs -- S
0.01 2
--0.01 --10--0.1
357
yfs -- I
23 57 23 57
D
75°C
25°C
--1.0
Drain Current, ID -- A
10000
7 5
3 2
1000
7 5
3 2
100
7
Ciss, Coss, Crss -- pF
5 3
2
10
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
Drain-to-Source V oltage, V
1000
7 5
3 2
100
7 5
3 2
10
7 5
Switching Time, SW Time -- ns
3 2
1.0
--0.1 --1.0
23 57
SW Time -- I
t
f
t
d
(off)
Drain Current, I
P
-- Ta
1.5
Mounted on a ceramic board(1000mm2✕0.8mm)
D
DS
-- V
DS
D
t
(on)
d
23 57
-- A
D
VDS= --10V
IT00396
f=1MHz
IT00398
VDD= --10V VGS= --4V
t
r
IT00400
--10
I
-- V
F
--10 7
VGS=0
5 3
2
--1.0 7 5
-- A F
3 2
--0.1 7
5 3
2
--0.01
Forward Current, I
7 5
3 2
--0.001 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --1.0--0.9--0.8
SD
Ta=75
Diode Forward V oltage, VSD -- V
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1 0
0
VDS= --10V ID= --2A
VGS -- Qg
810121416246 18
Total Gate Charge, Qg -- nC
5 3
I
= --15A
2
DP
--10 7 5
I
= --2A
3
-- A
D
2
D
--1.0 7 5
3 2
--0.1
Drain Current, I
7 5
Ta=25°C
3
Single pulse
2
Mounted on a ceramic board(1000mm2✕0.8mm)1unit
--0.01
--0.01
Operation in this area is limited by RDS(on).
23 57
--0.1
A S O
DC operation
23 57 23 57 23
--1.0
Drain-to-Source V oltage, V
°C
°C
25
--25°C
DS
<10µs
100ms
-- V
IT00397
IT00399
1ms
10ms
--10
IT03264
-- W D
1.0
0.8
0.5
Allowable Power Dissipation, P
0020 40
Total dissipation
1unit
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03265
No.7020-3/4
Page 4
FTD1014
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.
No.7020-4/4
PS
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