Datasheet FTD1011 Datasheet (SANYO)

Ordering number : ENN6593

FTD1011

P-Channel Silicon MOSFET

FTD1011

Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

•

2.5V drive.

• Mount height of 1.1mm.

• Composite type, facilitating high-density mounting.

Package Dimensions

unit : mm

2155A

[FTD1011]

3.0

0.65

85

4.5 0.95

0.425

6.4

0.5

1 : Drain1
2 : Source1
3 : Source1

0.125

4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2

SANYO : TSSOP8

Specifications

14

0.25

(0.95)

1.0

0.1

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% --15 A
Mounted on a ceramic board (1000mm2✕0.8mm)1unit
Mounted on a ceramic board (1000mm2✕0.8mm)

--20 V
±10 V

--3 A

0.8 W

1.0 W

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance

Static Drain-to-Sourse on-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=--3A, VGS=--4V 50 65 mΩ
RDS(on)2 ID=--2A, VGS=--2.5V 68 96 mΩ

=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--3A 6 8.8 S

min typ max

Marking : D1011 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-2725

No.6593-1/4

FTD1011

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 190 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 65 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 23 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.6 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 2.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 110 ns

r

See specified Test Circuit 75 ns

f

IS=--3A, VGS=0 --0.8 --1.5 V

min typ max

Switching Time Test Circuit Electrical Connection

Ratings

Unit

0V

--4V

PW=10µs
D.C.≤1%

P.G

--6

--5

--4

-- A
D

--3

--2

Drain Current, I

--1

0

0

160

140

VDD= --10V

V

IN

V

IN

G

50Ω

I

-- V

D

D

DS

ID= --3A
RL=3.3Ω

S

V

OUT

--2.5V

--2.0V

--3.0V

--4.0V

--0.2--0.1 --0.3 --0.4 --0.6--0.5 --0.8 --0.9 --1.0

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

VGS= --1.5V

--0.7

IT02298

GS

Ta=25°C

D2 S2 S2 G2

D1 S1 S1 G1

--6

VDS=10V

--5

--4

-- A
D

--3

--2

Drain Current, I

--1

0

0

--0.2 --0.6 --1.6--1.0--0.8

160

140

I

-- V

D

GS

25°C

Ta=75°C

--0.4 --1.4--1.2 --2.0--1.8

Gate-to-Source V oltage, VGS -- V

--25°C

IT02299

RDS(on) -- Ta

120

(on) -- mΩ

ID= --2A

100

DS

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

--2 --40 --6 --10--8

--3A

Gate-to-Source V oltage, VGS -- V

120

(on) -- mΩ

100

DS

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

IT02300 IT02301

--40 --20--60

= --2A, V

I

D

= --3A, V

I

D

0

Ambient Temperature, Ta -- °C

GS

GS

= --2.5V

= --4.0V

No.6593-2/4

160120 14010060 804020

Forward Transfer Admittance, yfs -- S

2

10

7

5

3

2

1.0
7

5

3

2

0.1

yfs -- I

VDS=10V

25°C

75°C

Ta= --25°C

D

--1.0--0.1--0.01

Drain Current, ID -- A

3

2

1000

7
5

3

2

Ciss, Coss, Crss -- pF

100

7
5

0 --4 --6--2 --10 --12--8 --14 --16 --20

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

DS

Drain-to-Source V oltage, VDS -- V

5

VDD= --10V
VGS= --4V

3
2

100

7
5

3
2

SW Time -- I

Switching Time, SW Time -- ns

10

7

--0.1 --1.0

td(off)

t

f

t

r

t

(on)

d

D

23 5723 57

Drain Current, ID -- A

P

-- Ta

1.2

D

IT02302

f=1MHz

--18

IT02304

IT02306

FTD1011

--1023 57 23 57 23 57

I

-- V

F

--10
7

VGS=0

5
3

2

--1.0
7

-- A

5

F

3
2

--0.1
7

5
3

2

Foward Current, I

--0.01
7
5

3
2

--0.001

Ta=75°C

--0.3 --0.6 --1.0--0.4

25°C

--0.5 --0.7 --0.8 --0.9--0.2

SD

--25°C

Diode Forward V oltage, VSD -- V

--10

--9

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1
0

VDS= --10V
ID= --3A

VGS -- Qg

62418 20 22141021216840

Total Gate Charge, Qg -- nC

3

IDP= --15A

2

--10
7
5

ID= --3A

3
2

-- A
D

--1.0
7
5

3

Operation in this

2

--0.1

Drain Current, I

--0.01

area is limited by RDS(on)

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(1000mm2✕0.8mm)1unit

--0.01 --0.1 --1.0 --10

A S O

100ms

DC operation

23 5723 5723 57 23

Drain-to-Source V oltage, VDS -- V

1.0

PD(FET1) -- PD(FET2)

<10µs

10ms

IT02303

IT02305

1ms

IT02307

1.0

-- W
D

0.8

Total dissipation

0.6

1unit

0.4

0.2

Allowable Power Dissipation, P

Mounted on a ceramic board(1000mm2✕0.8mm)

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT02308

-- W

0.8

(FET1)

D

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 0.2 0.4 0.6 0.8 1.0

Mounted on a ceramic board(1000mm

2

✕0.8mm)

Allowable Power Dissipation, PD(FET2) -- W

IT02309

No.6593-3/4

FTD1011

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.

No.6593-4/4

PS