Datasheet FT4016MP Specification

FT40...P

INSULATED HIGH COMMUTATION TRIAC

INSULATED TO3P

1

2

3

MT1 (1)

MT2 (2)

G (3)

On-State Current

40 Amp

Gate Trigger Current

£ 50 mA (16)
£ 35 mA (14)

Off-State Voltage

600 V ÷ 800 V

FEATURES

 Provides voltage insulated tab (rated at 2500V RMS)

lass/passivated die junctions

G
 High current Triac
 Low thermal resistance
 High commutation
High surge current capability
Low forward voltage drop
Solder dip 260ºC, 10s

Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC

Meets MSL level 3, per J-STD-020, LF maximum
peak of 260º C

Certified compliance of UL 1557 Standard for Electrically
Isolated Semiconductors. Fille reference E320541, Vol. 3

MECHANICAL DATA



Case: INSULATED TO3P. Epoxy meets UL 94V-0

flammability rating.


Polarity: As marked on the body.



Terminals:

MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.

TYPICAL APPLICATIONS

 Used on inductive loads, thanks to their high commutation
performances.

Matte tin plated leads, solderable per

Maximun Ratings and Electrical Characteristics at 25°C

PARAMETER CONDITIONS Value UnitSYMBOL

I

T(RMS)

I

TSM

I

TSM

I2t

I

GM

P

G(AV)

dI/dt

T

j

T

stg

T

sld

V

iso

SYMBOL

V

DRM/VRRM

RMS On-state Current (full sine wave)

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Gate Current

Average Gate Power Dissipation

Critical rate of rise of on-state current

Operating Temperature

Storage Temperature

Soldering Temperature 10s max °C

R.M.S. isolation voltage 50/60 Hz
sinusoidal waveform

PARAMETER

Repetitive Peak Off State Voltage

All Conduction Angle, Tc = 80 °C

Full Cycle, 60 Hz (t = 16.7 ms)

Full Cycle, 50 Hz (t = 20 ms)

tp = 10 ms, Half Cycle

20 µs max. Tj = 125 °C

Tj = 125 °C

= 2x IGT, tr £100ns

I

G

f = 120 Hz, Tj = 125 °C

VOLTAGE

M

600

40

420

400

1000

8

1

50

(-40 +125)

(-40 +125)

260

2.500 Vac

N

800

A

A

A

2

A

A

W

A/µs

°C

°C

Unit

V

s

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Version: Sep-12
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INSULATED HIGH COMMUTATION TRIAC

Electrical Characteristics at Tamb = 25 °C

FT40...P

SYMBOL

(1)

I

GT

V

GT

V

GD

(2)

I

H

I

L

(2)

dV/dt

Gate Trigger Voltage

Holding Current

Latching Current

Critical Rate of Voltage Rise

PARAMETER

Gate Non Trigger Voltage

CONDITIONS

VD = 12 VDC, RL = 33W,

VD = 12 VDC, RL = 33W,

VD = V

I

=500 mA,Gate open,

T

IG = 1.2 IGT, Tj =

V

D

, RL = 3.3 KW,

DRM

= 0.67 x V

25 °C

, Gate open

DRM

Tj = 125 °C

(2)

(dV/dt)c

Critical Rate of Commu-

(dI/dt)c

= 20 A/ms

tating off-state voltage

(2)

V

TM

(2)

V

t (o)

(2)

r

d

I

DRM/IRRM

R

th(j-c)

On-state Voltage

Threshold Voltage

Dynamic resistance

Off-State Leakage Current

Thermal Resistance

I

= 60 Amp, tp = 380 µs,

T

T

= 125 °C

j

Tj = 125 °C

VD = V

= V

R

DRM

RRM

,

,

for AC 360° conduction angle

Junction-Case

R

th(j-a)

Thermal Resistance

Junction-Ambient

(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.

Tj = 25 °C

T

= 25 °C

j

T

= 125 °C

j

T

= 25 °C

j

T

= 125 °C

j

Tj = 25 °C

T

= 125 °C

j

T

= 25 °CV

j

Quadrant

Q1÷Q3Gate Trigger Current

Q1÷Q3

Q1÷Q3

Q1,Q3

Q2

MAX

MAX

MIN

MAX

MAX

MAX

MIN

MIN

MAX

MAX

MAX

MAX

MAX

SENSITIVITY

14

35

16

50

1.3

0.2

60

50

160

400

80

70

160

500

10

1.55

0.85

10

5

20

0.9

50

Unit

mA

V

V

mA

mA

mA

V/µs

V/ms

V

V

mW

mA

µA

°C/W

°C/W

Part Number Information

F T 40 14 M P 00

FAGOR

TRIAC

CURRENT

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Document Name: ft40phc

TU

PACKAGING

FORMING

CASE

VOLTAGE

SENSITIVITY

Version: Sep-12
Page Number: 2/5

FT40...P

INSULATED HIGH COMMUTATION TRIAC

Ordering information

PREFERRED P/N PACKAGE CODE DELIVERY MODE BASE QUANTITY UNIT WEIGHT (g)

FT4014MP 00TU

TU

Package Outline Dimensions: (mm)

N

K

Test sort name

Week code

H

MC

XXXP
WWY

TUBE

INSULATED TO3P

A

L

Marking code

Format type
Year code

B

G

F

450 4.50

MAX

TYP

MIN

Mounting Torque

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Document Name: ft40phc

M

J

J

C

D

E

DIMENSIONS (mm)

ABCDEFGHJKLMN

4.6 1.55 15.6 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40

4.60

4.4 1.45

0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20

14.35

0.8 N.m

Version: Sep-12
Page Number: 3/5

INSULATED HIGH COMMUTATION TRIAC

Ratings and Characteristics (Ta 25 ºC unless otherwise noted)

Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle).

Fig. 2: RMS on-state current versus case
temperature (full cycle).

FT40...P

P (W)

50

40

30

20

10

0

15 25535

0

20 3010

Fig. 3: On-state characteristics (maximum
values)

ITM (A)

400

100

Tj = 25 °C

Tj max

10

1

0.5 1.0 1.5 2.0 2.5 3.0

3.5 4.0 4.5

Fig. 5: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I

(A). I2t (A2s)

I

TSM

3000

Tj initial = 25 °C

40

5.0

I

T(RMS)

VTM (V)

2

t.

(A)

I

45

T(RMS)

(A)

40

35

a =180°

30

25

20

15

10

5

0

0 10025 12550 75

Fig. 4: Surge peak on-state current
versus number of cycles

I

(A)

TSM

450

400

350

t=20ms

One cycle

300

250

Non repetitive
Tj initial = 25 °C

200

150

Repetitive
Tc = 70 °C

100

50

0

1

10

100

Number of cycles

1000

Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)

I

GT,IH,IL

[Tj]/I

GT,IH,IL

.[Tj=25ºC]

2.5

Tc(°C)

1000

100

0.01

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0.10

1.00

I2t

I

TSM

2.0

1.5

1.0

IH&I

I

GT

L

0.5

10.00

tp(ms)

0

-40 -20 0

20 40 60 80

100 120 140

Tj(ºC)

Version: Sep-12
Page Number: 4/5

FT40...P

INSULATED HIGH COMMUTATION TRIAC

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