Page 1
MITSUBISHI Nch POWER MOSFET
FS70KMJ-2
HIGH-SPEED SWITCHING USE
FS70KMJ-2
¡4V DRIVE
DSS ................................................................................100V
¡V
¡r
DS (ON) (MAX) ..............................................................17mΩ
D ......................................................................................... 70A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ................................................................................ 2000V
¡V
........... 115ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
AC for 1minute, Terminal to case
Typical value
100
±20
70
280
70
70
280
35
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 100V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 35A, VGS = 10V
I
D = 35A, VGS = 4V
I
D = 35A, VGS = 10V
I
D = 35A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 35A, VGS = 0V
I
Channel to case
S = 70A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS70KMJ-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
13
14
0.46
68
8200
1150
600
54
140
830
350
1.0
—
115
—
±0.1
0.1
2.0
17
18
0.60
—
—
—
—
—
—
—
—
1.5
3.57
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
100
80
(A)
D
60
(TYPICAL)
VGS = 10V
6V
5V
4V
C
(°C)
TC = 25°C
Pulse Test
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
TC = 25°C
0
10
Single Pulse
7
5
3
0
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
Pulse Test
40
30
VGS = 10V
5V
4V
(A)
D
1
357
3.5V
tw = 10ms
100ms
1ms
10ms
100ms
DC
2
DS
(V)
PD = 35W
3V
23
40
20
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
3V
PD = 35W
20
10
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
2.5V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS70KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
1.6
1.2
0.8
VOLTAGE VDS (ON) (V)
0.4
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
DRAIN CURRENT ID (A)
TC = 25°C
Pulse Test
ID = 100A
70A
30A
GS (V)
TC = 25°C
DS
= 10V
V
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
20
TC = 25°C
Pulse Test
16
12
8
4
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
0
0
10
357 2 10
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
VDS = 10V
7
Pulse Test
5
4
(S)
3
2
1
10
7
5
4
3
ADMITTANCE yfs
FORWARD TRANSFER
TC = 25°C
75°C
125°C
2
VGS = 4V
1
357
D (A)
10V
2
23
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
Tch = 25°C
5
10
GS
= 0V
V
7
f = 1MH
5
3
2
4
10
7
5
3
2
CAPACITANCE
Ciss, Coss, Crss (pF)
3
10
7
5
3
2
10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
210
1
357357 2 10
GS (V)
Ciss
Coss
Crss
2
357 23
DS (V)
0
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
4
10
Tch = 25°C
7
5
DD
= 50V
V
GS
= 10V
V
3
R
GEN
= RGS = 50Ω
2
3
10
7
5
3
2
2
10
7
5
SWITCHING TIME (ns)
3
2
1
10
0
10
23457 10
DRAIN CURRENT ID (A)
10
10
1
1
23457
D (A)
t
d(off)
t
f
t
r
t
d(on)
23457
2
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS70KMJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
(V)
I
D
GS
= 70A
8
6
4
2
GATE-SOURCE VOLTAGE V
0
0 40 80 120 160 200
GATE CHARGE Q
VDS = 20V
50V
80V
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
VGS = 0V
Pulse Test
80
(A)
S
60
40
20
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
I
D
= 1mA
3.2
(V)
2.4
GS (th)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
D = 1.0
th
3
0.5
2
0
0.2
10
7
0.1
5
3
0.05
2
0.02
–1
10
7
10
5
3
2
–2
10
0.01
Single Pulse
–4
23 57 23 57 23 57 23 57
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
10023 57
w
(s)
P
D
DM
tw
=
T
tw
T
10123 57
2
10
Feb.1999
Loading...