Page 1
FQD1N60C / FQU1N60C
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D
GS
D-PAK
FQD Series
GSD
Features
• 1A, 600V, R
• Low gate charge ( typical 4.8nC)
• Low Crss ( typical 3.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
DS(on)
= 11.5Ω @V
!!!!
!!!!
G
GS
January 2009
QFET
= 10 V
D
!!!!
!!!!
!!!!
!!!!
####
####
""""
""""
!!!!
!!!!
!!!!
!!!!
!!!!
!!!!
S
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQD1N60C / FQU1N60C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 600 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
1A
0.6 A
4A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C)*
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
33 mJ
1A
2.8 mJ
4.5 V/ns
2.5 W
28 W
- Derate above 25°C 0.22 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 4.53 °C/W
Thermal Resistance, Junction-to-Ambient* -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
Rev. A1, January 2009
Page 2
FQD1N60C / FQU1N60C
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e st Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, I
GS
= 250 µA, Referenced to 25°C
I
D
V
= 600 V, VGS = 0 V
DS
= 480 V, TC = 125°C
V
DS
V
= 30 V, VDS = 0 V
GS
V
= -30 V, VDS = 0 V
GS
= 250 µA
D
600 -- -- V
-- 0.6 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, I
DS
= 10 V, ID = 0.5 A
V
GS
V
= 40 V, ID = 0.5 A
DS
= 250 µA
D
(Note 4)
2.0 -- 4.0 V
-- 9.3 11.5 Ω
-- 0.75 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 19 25 pF
Reverse Transfer Capacitance -- 3.5 4.5 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 130 170 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 21 52 ns
Turn-Off Delay Time -- 13 36 ns
Turn-Off Fall Time -- 27 64 ns
Total Gate Charge
Gate-Source Charge -- 0.7 -- nC
Gate-Drain Charge -- 2.7 -- nC
V
= 300 V, ID = 1.1 A,
DD
R
= 25 Ω
G
(Note 4, 5)
V
= 480 V, ID = 1.1 A,
DS
V
GS
(Note 4, 5)
= 10 V
-- 7 24 ns
-- 4.8 6.2 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59 mH, IAS = 1.1 A, VDD = 50V, R
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 1 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 4 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.53 -- µC
≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BV
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
= 0 V, IS = 0.5 A
GS
= 0 V, IS = 1.1 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.4 V
-- 190 -- ns
(Note 4)
Rev. A1. January 2009
Page 3
Typical Characteristics
FQD1N60C / FQU1N60C
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
0
6.5 V
10
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
10
, Drai n Current [A]
D
I
$
Notes :
1. 250%s Pulse Test
2. T
-2
10
-1
10
0
10
C
1
10
VDS, Drai n-Source Vol tage [V]
30
25
20
],
'
[
15
DS(ON)
R
10
Drain-Source On-Resistance
5
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS = 10V
VGS = 20V
$
Note : T
ID, Drain Curr ent [A]
0
10
150oC
-55oC
25oC
, Drai n Current [ A]
D
I
$
Notes :
= 40V
1. V
&
= 25
-1
10
246810
DS
2. 250%s Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
0
10
150
℃
25
&
= 25
J
, Reverse Drain Current [A]
-1
DR
10
I
0.2 0.4 0.6 0.8 1.0 1.2 1.4
℃
Notes :
※
1. V
2. 250
= 0V
GS
s Pulse Test
μ
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
250
200
150
100
Capacitance [pF]
50
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
C
iss
C
oss
C
rss
0
10
VDS, Drai n-Sourc e Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
$
1. V
2. f = 1 MHz
1
10
Notes ;
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 480V
$
Note : I
= 1A
D
Rev. A1, January 2009
12
10
VDS = 120V
VDS = 300V
8
= 0 V
GS
6
4
, Gate-Sour ce Voltage [V]
GS
2
V
0
0123456
QG, Total Gate Charge [nC]
Page 4
Typical Characteristics
(Continued)
FQD1N60C / FQU1N60C
1.2
1.1
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
T
, Juncti on Temperature [oC]
J
$
1. V
2. I
Notes :
D
= 0 V
GS
= 250 %A
Figure 7. Breakdo w n Voltage Variation
vs Temperature
1
10
0
10
-1
10
, Dra in Curr ent [A]
D
I
-2
10
0
10
Operatio n in This Area
is Limited by R
DS(on)
DC
$
Notes :
1. T
= 25 oC
C
2. T
= 150 oC
J
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
100 ms
2
10
1 ms
10 ms
100 µs
3.0
2.5
2.0
1.5
, (Normalized)
1.0
DS(ON )
R
Drain- Source On-Resis tance
0.5
0.0
-100 -50 0 50 100 150 200
$
Notes :
= 10 V
1. V
GS
= 0.5 A
2. I
D
TJ, Juncti on Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
1.2
1.0
0.8
3
10
0.6
0.4
, Drai n Current [ A]
D
I
0.2
0.0
25 50 75 100 125 150
TC, Case Temperature [&]
Figure 9. Maximum Safe Operating Area
©2009 Fairchild Semiconductor Corporation
(t), Thermal Response
JC
(
Z
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0
0.2
10
0.1
0.05
0.02
0.01
-1
10
-5
10
single pulse
-4
10
-3
10
10
$
Notes :
(t) = 4.53 &/W Max .
1. Z
(
JC
2. D uty F actor, D= t
3. TJM - TC = PDM * Z
P
DM
-2
-1
10
1/t2
(t)
(
JC
t
1
t
2
0
10
1
10
t1, S q u a re W ave P ulse D ura tio n [se c ]
Figure 11. Transient Thermal Response Curve
Rev. A1, January 2009
Page 5
12V
12V
200nF
200nF
3mA
3mA
50K)
50K)
V
V
Gate Charge Test Circuit & Waveform
V
V
GS
GS
GS
300nF
300nF
Same Type
Same Type
as DUT
as DUT
DUT
DUT
V
V
DS
DS
GS
10V
10V
Resistive Switching Test Circuit & Waveforms
FQD1N60C / FQU1N60C
Q
Q
g
g
Q
Q
gs
gs
Q
Q
gd
gd
Charge
Charge
10V
10V
10V
10V
R
R
L
DUT
DUT
L
V
V
DD
DD
V
V
DS
DS
V
V
GS
GS
R
R
G
G
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
t
t
on
on
t
t
d(off)
d(off)
t
t
f
f
t
t
off
off
Unclamped Inductive Switching Test Circuit & Waveforms
BV
BV
DSS
L
LL
V
V
DS
DS
BV
BV
DSS
V
V
DSS
I
I
AS
AS
DD
DD
I
IDI
D
D
R
R
G
G
DUT
DUT
t
t
p
p
V
V
DD
DD
1
1
1
1
----
----
----
----
E
E
=LI
E
=LI
=LI
AS
AS
AS
2
2
2
2
AS
AS
AS
ID (t)
ID (t)
t
2
2
2
t
p
p
DSS
--------------------
-------------------BV
BV
DSS-VDD
DSS-VDD
Time
Time
V
(t)
V
(t)
DS
DS
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
Page 6
Peak Diode Recovery dv /d t Test Circuit & Waveforms
+
DUT
DUT
I
I
SD
SD
Driver
Driver
R
R
G
G
V
V
GS
GS
+
V
V
DS
DS
_
_
L
LL
Same Type
Same Type
as DUT
as DUT
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
FQD1N60C / FQU1N60C
V
V
DD
DD
V
V
GS
GS
( Driver )
( Driver )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body Diode Forward Current
IFM, Body Diode Forward Current
I
I
RM
RM
Body Diode Reverse Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
Forward Voltage Drop
Forward Voltage Drop
di/dt
di/dt
10V
10V
V
V
DD
DD
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
Page 7
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
FQD1N60C / FQU1N60C
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. A1, January 2009
Page 8
Mechanical Dimensions
FQD1N60C / FQU1N60C
I - PAK
©2009 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, January 2009
Page 9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
®
®
tm
®
®
®
®
*
®
F-PFS™
* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
®
®
®
tm
®
SM
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise
®
TinyBoost™
tm
TinyBuck™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FQD1N60C / FQU1N60C
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2009 Fairchild Semiconductor Corporation
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. A1. January 2009
Rev. I37
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