Datasheet FQD7N10LTM Specification

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Page 1

FQD7N10L

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N-Channel QFET® MOSFET

100 V, 5.8 A, 350 m

FQD7N10L N-Channel QFET

April 2013

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,

’s proprietary

Features

• 5.8 A, 100 V, R ID = 2.9 A

• Low Gate Charge (Typ. 4.6 nC)

• Low Crss (Typ. 12 pF)

• 100% Avalanche Tested

= 350 m (Max.) @ VGS = 10 V,

DS(on)

audio amplifier, DC motor control, and variable switching power applications.

D-PAK

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter FQD7N10L Unit

DSS

GSS

dv/dt Peak Diode Recovery dv/dt

Drain-Source Voltage 100 V

Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

= 100°C)

(Note 1)

5.8 A

3.67 A

23.2 A

Gate-Source Voltage  20 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

= 25°C)

(Note 2)

(Note 1)

(Note 3)

50 mJ

5.8 A

2.5 mJ

6.0 V/ns

2.5 W

25 W

- Derate above 25°C 0.2 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

MOSFET

Thermal Characteristics

Symbol Parameter FQD7N10L Unit

JC

JA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case, Max. 5.0 °C/W

Thermal Resistance, Junction-to-Ambient * 50 °C/W

Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W

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FQD7N10L N-Channel QFET

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit



Off Characteristics

BV / T

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 A

= 250 A, Referenced to 25°C

= 100 V, VGS = 0 V

= 80 V, TC = 125°C

= 20 V, VDS = 0 V

= -20 V, VDS = 0 V

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 A

-- -- 10 A

-- -- 100 nA

-- -- -100 nA



On Characteristics

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= VGS, ID = 250 A

= 10 V, ID = 2.9 A

= 5 V, ID = 2.9 A

= 30 V, ID = 2.9 A

1.0 -- 2.0 V

0.275

0.300

0.35

0.38

-- 4.6 -- S



Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance -- 55 72 pF

Reverse Transfer Capacitance -- 12 15 pF

= 25 V, VGS = 0 V,

f = 1.0 MHz

-- 220 290 pF



Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Turn-On Rise Time -- 100 210 ns

Turn-Off Delay Time -- 17 45 ns

Turn-Off Fall Time -- 50 110 ns

Total Gate Charge

Gate-Source Charge -- 1.0 -- nC

Gate-Drain Charge -- 2.6 -- nC

= 50 V, ID = 7.3 A,

= 25 

(Note 4)

= 80 V, ID = 7.3 A,

= 5 V

(Note 4)

-- 9 30 ns

-- 4.6 6.0 nC



MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.23mH, I

3. I

4. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 140 -- nC

= 5.8A, VDD = 25V, RG = 25 Starting TJ = 25°C

≤ 7.3A, di/dt ≤ 300A/s, VDD ≤ BV

Starting TJ = 25°C

DSS,

= 0 V, IS = 5.8 A

= 0 V, IS = 7.3 A,

/ dt = 100 A/s

-- -- 1.5 V

-- 70 -- ns

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FQD7N10L N-Channel QFET

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-1

25℃

150℃

※ Notes :

1. V

= 0V

2. 250μs Pulse Test

, Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

0246810

-1

※ Notes :

1. V

= 30V

2. 250μ s Pulse Test

-55℃

150℃

25℃

, Drain Current [A]

VGS , Gate-Source Voltage [V]

-1

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3.0 V

※ Notes :

1. 250μs Pulse Test

2. T

= 25℃

, Drain Current [A]

VDS, Drai n-Source Volt age [V]

012345678

VDS = 50V

VDS = 80V

※ Note : I

= 7.3 A

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

-1

100

200

300

400

500

600

iss

= Cgs + Cgd (Cds = shorted)

oss

= Cds + C

rss

= C

※ Notes :

1. V

= 0 V

2. f = 1 MHz

rss

oss

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 5 10 15 20

0.0

0.3

0.6

0.9

1.2

1.5

VGS = 10V

VGS = 5V

※ Note : T

= 25℃

DS(ON)

[Ω ],

Drain-Source On-Resistance

ID, Drain Current [A]

MOSFET

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

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-5

-4

-3

-2

-1

※ N otes :

1. Z

θ JC

(t) = 5.0 /W Max.℃

2. D uty Fa ctor, D =t1/t

3. TJM - TC = PDM * Z

θ JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

θ JC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

25 50 75 100 125 150

, Drain Current [A]

TC, Case Temperat ure [ ]℃

-1

10 ms

1 ms

100 s

Operation in This Ar ea is Limited by R

DS(on)

※ Notes :

1. T

= 25 oC

2. T

= 150 oC

3. Single Pulse

, Drain Current [A]

VDS, Drai n-Source Volt age [V]

-100 -50 0 50 100 1 50 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

= 5 V

2. I

= 2.9 A

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Juncti on Temperat ure [oC]

-100 - 50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. V

= 0 V

2. I

= 250 μA

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junct ion Temperature [oC]

Typical Characteristics (Continued)

FQD7N10L N-Channel QFET

MOSFET

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

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Charge

3mA

DUT

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

3mA

DUT

300nF

50KΩ

200nF

12V

Same Type

as DUT

10%

90%

d(on)tr

off

d(off)

DUT

10%

90%

d(on)tr

off

d(off)

DUT

=LI

---2

-------------------BV

DSS-VDD

DSS

(t)

Time

10V

DUT

=LI

---2

=LI

---2

-------------------BV

DSS-VDD

DSS

(t)

Time

10V

DUT

IDI

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FQD7N10L N-Channel QFET

MOSFET

Unclamped Inductive Switching Test Circuit & Waveforms

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DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

D =

Gate Pulse Width Gate Pulse Period

--------------------------

FQD7N10L N-Channel QFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

MOSFET

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Package Dimensions

FQD7N10L N-Channel QFET

DPAK

MOSFET

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Page 8

TRADEMARKS

™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

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MicroPak2™ MillerDrive™ MotionMax™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

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Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™

Sync-Lock™

®*

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT

SerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

FQD7N10L N-Channel QFET

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I64

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