Datasheet FQA7N90M Datasheet (Fairchild Semiconductor)

FQA7N90M

900V N-Channel MOSFET

FQA7N90M

January 2002

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• 7A, 900V, R

• Low gate charge ( typical 40 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.8Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies..

D

!!!!

●●●●

◀◀◀◀

▲▲▲▲

●●●●

!!!!

S

TO-3P

GSD

FQA Series

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

!!!!

G

Symbol Parameter FQA7N90M Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 900 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

7.0 A

4.4 A 28 A

Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

780 mJ

6.4 A 21 mJ

4.0 V/ns

210 W

- Derate above 25°C 1.69 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.59 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, January 2002

FQA7N90M

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 0.96 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.5 A

V

GS

= 50 V, ID = 3.5 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.5 1.8 Ω

-- 5.7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 140 185 pF Reverse Transfer Capacitance -- 17 23 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1440 1880 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 80 170 ns Turn-Off Delay Time -- 95 200 ns Turn-Off Fall Time -- 55 120 ns Total Gate Charge Gate-Source Charge -- 8.5 -- nC Gate-Drain Charge -- 20 -- nC

= 450 V, ID = 7.0 A,

V

DD

= 25 Ω

R

G

V

= 720 V, ID = 7.0 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 35 80 ns

-- 40 52 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 30mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 7.0A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 6.4 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 25.6 A

= 0 V, IS = 7.0 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 4.3 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 7.0 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 400 -- ns

(Note 4)

Rev. A, January 2002

Typical Characteristics

FQA7N90M

V

GS

Top : 1 5 .0 V

10.0 V

1

10

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V Bottom : 5.0 V

0

10

-1

, Drain Current [A]

10

D

I

-2

10

-1

10

0

10

※

Note s :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

4

3

[Ω],

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-R esistance

※

Note : T

0

0 5 10 15 20

ID, Drain Current [A]

1

10

0

10

, Dra in C u rre n t [A ]

D

I

-1

10

246810

℃

150

℃

25

-55

※

Note s :

1. V

= 50V

DS

2. 250μs Pulse Test

℃

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

℃

= 25

J

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

150

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Tes t

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 180V

VDS = 450V

VDS = 720V

※

Note : I

= 7.0A

D

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Notes :

1. V

= 0 V

GS

10

2. f = 1 MHz

1

C

rss

0

10

12

10

8

6

4

, Ga te -S o u rc e V o lta g e [V]

2

GS

V

0

0 5 10 15 20 25 30 35 40 45

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

Typical Characteristics (Continued)

FQA7N90M

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

No tes :

D

GS

= 250

= 0 V

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

10 ms

DC

※

Notes :

1. TC = 25 oC

2. T

= 150 oC

J

3. Single Pulse

1

10

2

10

VDS, Drain-Source Voltage [V]

100 µs

1 ms

3.0

2.5

2.0

μ

A

1.5

, (No rmalize d)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Note s :

1. V

= 10 V

GS

2. I

= 3.5 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

8

6

3

10

4

, Drain Current [A]

D

I

2

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

D=0.5

0.2

-1

10

0.1

0.05

0.02

(t), Therm al Response

JC

0.01

θ

Z

-2

10

-5

10

sin g le p u ls e

-4

10

-3

10

-2

※

N o te s :

1. Z

(t) = 0.59 ℃/W M a x .

θ

JC

2. D u ty F a c t o r, D = t

3. TJM - TC = PDM * Z

P

DM

-1

10

1/t2

(t)

θ

JC

t

1

t

2

0

10

1

10

t1, S q u a re W av e P u lse D ur a tion [s e c ]

Figure 11. Transient Thermal Response Cur ve

12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQA7N90M

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

BV

DSS-VDD

DSS

Time

V

(t)

V

(t)

DS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

--------------------

AS

ID (t)

t

p

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQA7N90M

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

ø3.20 ±0.10

15.60 ±0.20

13.60 ±0.20

9.60 ±0.20

TO-3P

3.80 ±0.20

4.80 ±0.20

+0.15

1.50

–0.05

FQA7N90M

13.90 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

5.45TYP

±0.30]

[5.45

5.45TYP

±0.30]

[5.45

12.76 ±0.20

19.90 ±0.20

3.50 ±0.20

23.40 ±0.20

16.50 ±0.30

18.70 ±0.20

1.40 ±0.20

+0.15

0.60

–0.05

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

CMOS™

E EnSigna™ FACT™ FACT Quiet Series™

STAR*POWER is used under license

®

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™

OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™

®

UltraFET

VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Pro d uct Statu s Definition

Advance Information Formative or In

Design

Preliminary First Producti on This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4

Datasheet FQA7N90M Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

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