Datasheet FQA8N100C Datasheet (Fairchild)

September 2005

QFET

FQA8N100C 1000V N-Channel MOSFET

®

FQA8N100C

1000V N-Channel MOSFET

Features

• 8A, 1000V, R

• Low gate charge (typical 53 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

(typical 16 pF)

rss

Absolute Maximum Ratings

DS(on)

= 1.45Ω @V

GSD

GS

= 10 V

TO-3PN

FQA Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies.

D

!

"

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"

G

!

" "

"

!

S

Symbol Parameter FQA8N100C Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 1000 V

Drain Current - Continuous (T

- Continuous (T

Drain Current - Pulsed Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

= 25°C)

C

- Derate above 25°C

= 25°C)

C

= 100°C)

C

(Note 1)

(Note 2)

(Note 1)

(Note 3)

8 5

32 A

850 mJ

8A

22.5 mJ

4.0 V/ns

225

1.79

300 °C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.56 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

A A

W

W/°C

FQA8N100C Rev. A

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA8N100C FQA8N100C TO-3PN -- -- 30

FQA8N100C 1000V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage VGS = 0V, I

Breakdown Voltage Temperature

DSS

J

Coefficient

= 250µA, Referenced to 25°C--1.4--V/°C

I

D

Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V

V

DS

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, I

Static Drain-Source On-Resistance

V

GS

Forward Transconductance VDS = 50V, ID = 4A

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 195 255 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 16 24 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time VDD = 500V, ID = 8A

= 25Ω

R

Turn-On Rise Time -- 95 200 ns

G

Turn-Off Delay Time -- 122 254 ns

Turn-Off Fall Time -- 80 170 ns

Total Gate Charge VDS = 800V, ID = 8A

V

Gate-Source Charge -- 13 -- nC

GS

Gate-Drain Charge -- 23 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, R

3. I

≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 8A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 8A

/dt =100A/µs

dI

Reverse Recovery Charge -- 5.2 -- µC

= 25Ω, Starting TJ = 25°C

G

, Starting T

DSS

= 25°C

J

F

= 250µA 1000 -- -- V

D

= 800V, T

= 10V, I

--

= 125°C

C

= 250µA3.0--5.0V

D

= 4A -- 1.2 1.45 Ω

D

(Note 4)

--

-- 8.0 -- S

--

-- 2475 3220 pF

-- 50 110 ns

(Note 4, 5)

-- 53 70 nC

= 10V

(Note 4, 5)

-- 620 -- ns

(Note 4)

10

100

µA µA

FQA8N100C Rev. A

2

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Typical Performance Character istics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQA8N100C 1000V N-Channel MOSFET

-55oC

Notes :

※

1. VDS = 50V

2. 250µ s Pulse Test

10

, Drain Current [A]

D

I

10

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

6.0 V Bottom : 5.5 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150oC

Notes :

※

1. 250µ s Pulse Test

2. T

= 25

℃

C

1

10

, Drain Current [A]

D

I

10

25oC

0

-1

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

3.0

2.5

VGS = 10V

2.0

[Ω ],

DS(ON)

1.5

R

1.0

Drain-Source On-Resistance

※

0.5 0 5 10 15 20 25

ID, Drain Current [A]

VGS = 20V

Note : T

1

10

0

10

150

, Reverse Drain Current [A]

DR

= 25

℃

J

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

VSD, Source-Drain voltage [V]

25

℃

Notes :

※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

FQA8N100C Rev. A

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

Notes :

※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 10203040506070

VDS = 800V

3

VDS = 200V

VDS = 500V

QG, Total Gate Charge [nC]

Note : I

※

= 8A

D

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FQA8N100C 1000V N-Channel MOSFET

Typical Performance Character istics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

Notes :

※

1. VGS = 0 V

2. I

TJ, Junct ion Temperat ure [oC]

= 250 µ A

D

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

TJ, Juncti on Temperat ur e [oC]

※

1. VGS = 10 V

2. I

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Operation in This Area

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

10

is Li mited by R

DS(on)

10 ms

DC

Notes :

※

1. TC = 25 oC = 150 oC

2. T

J

3. Singl e Pulse

1

10

2

10

VDS, Drai n-Source Vol tage [V]

1 ms

100 µs

10 µs

8

6

3

10

4

, Drain Current [A]

D

I

2

0

25 50 75 100 125 150

TC, Case Temperature [ ]

℃

Notes :

D

= 4 A

FQA8N100C Rev. A

Figure 11. Transient Thermal Response Curve

0

10

-1

10

(t), Thermal Response

θ JC

Z

-2

10

D=0.5

0.05

0.02

0.01

-5

0.2

0.1

single pulse

-4

10

-3

10

t1, Square Wave Pulse Duration [sec]

Note s :

※

1. Z

2. Du ty F actor, D =t1/t

3. TJM - TC = PDM * Z

P

-2

10

-1

10

4

(t) = 0.56 /W M ax.

θ JC

DM

℃

t

1

t

2

10

2

(t)

θ JC

0

1

10

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12V

200nF

3mA

50KΩ

V

Gate Charge Tes t Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQA8N100C 1000V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

E

AS

2

AS

(t)

I

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FQA8N100C Rev. A

5

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Peak Diode Recovery dv /dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FQA8N100C 1000V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FQA8N100C Rev. A

6

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Mechanical Dimensions

FQA8N100C 1000V N-Channel MOSFET

TO-3PN

FQA8N100C Rev. A

Dimensions in Millimeters

7

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

FQA8N100C 1000V N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8

FQA8N100C Rev. A

Rev. I16

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