Page 1
Semiconductor Group 1 07.96
Double Differential Magneto Resistor FP 410 L (4 x 80) FM
Dimensions in mm
Features
• Double differential magneto resistor
on same carrier
• Accurate intercenter spacing
• High operating temperature range
• High output voltage
• Compact construction
• Available in strip form for automatic
assembly
Type Ordering Code
FP 410 L (4×80) FM Q65410-L80E (taped)
FP 410 L (4×80) FM Q65110-L80F (singular)
Typical applications
• Incremental angular encoders
• Detection of sense of rotation
• Detection of speed
• Detection of position
Page 2
Semiconductor Group 2
FP 410 L (4 x 80) FM
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as Micropack.
The basic resistance of each of the magnetic resistors is 80 Ω. The two series coupled
pairs of magnetic resistors are actuated by an external magnetic field or can be biased
by a permanent magnet and actuated by a soft iron target.
Page 3
Semiconductor Group 3
FP 410 L (4 x 80) FM
Maximum ratings
Characteristics (
T
A
= 25 °C)
Parameter Symbol Value Unit
Operating temperature
T
A
– 40 / + 175 °C
Storage temperature
T
stg
– 40 / + 185 °C
Power dissipation
1)
P
tot
1000 mW
Supply voltage
2)
(B = 0.3 T) V
IN
8V
Thermal conductivity
–attached to heatsink
–in still air
G
th case
G
th A
≥ 20
2
mW/K
Basic resistance
(
I ≤ 1 mA; B = 0 T)
R
01-3
R
04-6
110…220 Ω
Center symmetry
3)
M
≤ 6%
Relative resistance change
(
R = R
01-3
, R
04-6
at B = 0 T)
B = ± 0.3 T
4)
B = ± 1 T
R
B/R0
> 1.7
> 7
–
Temperature coefficient
B = 0 T
B = ± 0.3 T
B = ± 1 T
TC
R
– 0.16
– 0.38
– 0.54
%/K
%/K
%/K
1) Corresponding to diagram P
tot
= f(T
case
)
2) Corresponding to diagram
V
IN
= f(T
case
)
3)
4) 1 T = 1 Tesla = 10
4
Gauss
M
R
01 2–
R
02 3–
–
--------------------------------=
× 100% for R
01-2
> R
02-3
R
01 2–
M
R
04 5–
R
05 6–
–
--------------------------------=
× 100% for R
04-5
> R
05-6
R
04 5–
Page 4
Semiconductor Group 4
FP 410 L (4 x 80) FM
Max. power dissipation versus
temperature
P
tot
= f(T), T = T
case
, T
A
Typical MR resistance
versus temperature
R
01-3, 4-6
= f(TA), B = Parameter
Maximum supply voltage
versus temperature
V
IN 1-3, 4-6
= f(T), B = 0.3 T
Typical MR resistance
versus magnetic induction
B
R
01-3, 4-6
= f(B), TA = 25 °C
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