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Differential Magneto Resistor FP 412 D 250
Dimensions in mm
Features
• Accurate intercenter spacing
• High operating temperature range
• High output voltage
• Signal amplitude independent of speed
• Compact construction
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of rotation
• Angular encoders
• Linear position sensing
• Available in strip form for automatic
assembly
Type Ordering Code
FP 412 D 250 Q65412-D 250
Semiconductor Group 1 07.96
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FP 412 D 250
The differential magneto resistor FP 412 D 250 is a magnetically variable resistor in Dtype InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is
supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of
each of the magneto resistors is 250 Ω. The series coupled MRs are actuated by an
external magnetic field or can be biased by a permanent magnet and actuated by a soft
iron target.
Maximum ratings
Parameter Symbol Value Unit
Operating temperature
Storage temperature
Power dissipation
Supply voltage
1)
2)
(B = 0.2 T) V
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (
T
= 25 °C)
A
Basic resistance
(
I ≤ 1 mA, B = 0 T)
Center symmetry
3)
Relative resistance change
(
R
= R
0
B = ± 0.3 T
01-3
, R
4)
at B = 0 T)
04-6
B = ± 1 T
T
T
P
G
G
R
M
R
A
stg
tot
IN
th case
th A
01-3
B/R0
– 40 / +175 °C
– 40 / +185 °C
1000 mW
12 V
≥ 25
1
mW/K
mW/K
370…630 Ω
≤ 10 %
> 2.8
> 12
–
–
Temperature coefficient
TC
B = 0 T
B = ± 0.3 T
B = ± 1 T
1) Corresponding to diagram P
2) Corresponding to diagram
3)
M
4) 1 T = 1 Tesla = 10
R
--------------------------------=
01 2–
R
–
01 2–
4
Gauss
R
02 3–
Semiconductor Group 2
= f(T
tot
V
IN
= f(T
case
case
× 100% for R
)
)
> R
01-2
02-3
R
– 1.8
– 2.7
– 2.9
%/K
%/K
%/K
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FP 412 D 250
Max. power dissipation versus
temperature
P
= f(T), T = T
tot
case
, T
A
Maximum supply voltage
versus temperature
V
= f(T), B = 0.2 T T = T
IN
case
, T
A
Typical MR resistance
versus temperature
R
= f(TA), B = Parameter
1-3
Typical MR resistance
versus magnetic induction
R
= f(B), TA = 25 °C
1-3
B
Semiconductor Group 3
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