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FP2189
1 Watt HFET
Product Features
• 50 – 4000 MHz
• Up to +31 dBm P1dB
• Up to +45 dBm Output IP3
• High Drain Efficiency
• 19 dB Gain @ 900 MHz
• MTBF >100 Years
• SOT-89 SMT Package
The Communications Edge TM
Preliminary Product Information
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drai
ias of +8 V and 250 mA to achieve +45 dBm outpu
IP3 performance and an output power of +31 dBm a
1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and qualit
components. The FP2189 has an associated MTBF o
greater than 100 years at a mounting temperature o
85°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers fo
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
4
2
1 3
Function Pin No.
Input 1
Ground 2
Output/Bias 3
Ground 4
Specifications
DC Electrical Parameter Units Min Typ Max
Saturated Drain Current1, I
Transconductance, Gm mS
Pinch Off Voltage2, Vp V
mA 500
dss
350
-2.0
Parameters3 Units Min Typ Max
Frequency Range MHz 50 4000
Small Signal Gain, Gss dB
Output P1dB dBm
Output IP34 dBm
Thermal Resistance °C/W
1. I
is measured with Vgs = 0 V, Vds = 3 V.
dss
2. Pinch-off voltage is measured when Ids = 0.4 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz
in an application circuit with ZL = Z
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
LOPT
, ZS = Z
SOPT
.
15
+31
+45
30
Absolute Maximum Ratings
Parameters Rating
Operating Case Temperature
Storage Temperature
Maximum DC Power 4.0 W
RF Input Power (continuous) +20 dBm
Operation of this device above any of there parameters may cause permanent damage
-40 to +85 °C
-40 to +125 °C
Typical Parameters5
Parameter Units Typical
Frequency MHz 915 1960 2140
S21 dB
S11 dB
S22 dB
Output P1dB dBm
Output IP3 dBm
Noise Figure dB
Vdd V
6
I
mA
dq
Idd at P1dB mA
5. Typical parameters represent performance in an application circuit.
6. Idq is the quiescent drain current at small signal output levels. The
current may increase as the output power is increased near its
compression point.
19.1 15.2 13.8
-17 -16 -23
-10 -8 -9
+30.3 +30.8 +31.4
+44.3 +44.2 +45.5
4.2 3.5 4.5
+8 +8 +8
250 250 250
260 330 320
Ordering Information
Part No. Description
FP2189
FP2189-PCB900S 900 MHz Application Circuit
FP2189-PCB1900S 1900 MHz Application Circuit
FP2189-PCB2140S 2140 MHz Application Circuit
1-Watt HFET
(Available in Tape & Reel)
This document contains information on a new product.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com
Specifications and information are subject to change without notice
• Web site: www.wj.com
May 2002
Page 2
FP2189
1 Watt HFET
Typical Performance Data
S-Parameters (V
3 GHz
2 GHz
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters
that are shown are the de-embedded data down to the device leads and represents typical performance of the device.
= 8 V, Ids = 250 mA, 25°C, Unmatched 50 ohm system)
ds
S11 vs Frequency
6 GHz
4 GHz
1 GHz
5 GHz
The Communications Edge TM
Preliminary Product Information
Gain, Maximum Stable Gain vs Frequency
G
msg
S21
S22 vs Frequency
6 GHz
5 GHz
4 GHz
3 GHz
2 GHz
1 GHz
This document contains information on a new product.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com
Specifications and information are subject to change without notice
• Web site: www.wj.com
May 2002
Page 3
FP2189
1 Watt HFET
Application Circuit: 870 – 960 MHz
Typical Specifications
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
1
Idq is the quiescent current at small signal output levels. The current typically
increases up to 260 mA at the 1-dB compression point.
V
dd
1
I
dq
C1
100 pF
RF IN
C14
4.7 pF
870 915 960
19.1 19.1 19.1
-12 -17 -25
-9 -10 -12
+30.4 +30.3 +30.2
+44.4 +44.3 +44.3
4.2 4.2 4.2
+ 8 V
250 mA
-Vgg
C4
1000 pF
C3
100 pF
100 Ω
L4
5.6 nH
Z1
Z2 Z3 Z4
18 nH
R1
L1
R2
10 Ω
-10
-20
S11, S22, S12 (dB)
-30
The Communications Edge TM
Preliminary Product Information
S-Parameters vs Frequency
10
S21
0
S22
S11
800 850 900 950 1000
Frequency ( MHz)
+ 8 V @ 250 mA
C12
0.1 µF
C8
1000 pF
C7
100 pF
FP2189
Sot-89
PIN 1
PIN 3
Z5 Z6 Z7
PIN 2,4
L2
5.6 nH
82 nH
C5
3 pF
L3
Vdd
20
18
16
14
12
C9
100 pF
S21 (dB)
RF OUT
Ref. Designator Length on .014”
Z1 30 1.45
Z2 30 1.45
Z3 135 6.5
Z4 50 2.4
Z5 50 2.4
Z6 42 2.0
Z7 65 3.1
The lengths are measured from the component edge-to-edge.
All micro strip lines have a line impedance of 50 Ω.
Ref. Designator Value Part style Size
C1, C3, C7, C9 100 pF 5% 50V, NPO/COG 0603
C4, C8 1000 pF 5%, 50V, NPO/COG 0603
C5 3 pF AVX 06031J3R0BAW TR 0603
C11 0.1 µF 10%, 50V, X7R 1206
C14 4.7 pF AVX 06035J4 R7APWTR 0603
R1 100 Ω 1/16 W, 5% 0603
R2 10 Ω 1/16 W, 5% 0603
L1 18 nH TOKO LL1608-FH18NJ 0603
L2, L4 5.6 nH TOKO LL1608-FH5N6S 0603
L3 82 nH TOKO LL1608-FH82NJ 0603
14 mil GETEKTM ML200DSS (εr = 4.2)
The layout of this circuit can be downloaded from the website.
This document contains information on a new product.
All other parts are No Loads.
Total unique parts count: 10
Specifications and information are subject to change without notice
GETEKTM (mil)
Electrical length @
900 MHz (deg)
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com
• Web site: www.wj.com
May 2002
Page 4
FP2189
1 Watt HFET
Application Circuit: 1930 – 1990 MHz
Typical Specifications
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
1
Idq is the quiescent current at small signal output levels. The current typically
increases up to 330 mA at the 1-dB compression point.
V
dd
1
I
dq
1930 1960 1990
15.3 15.2 15.0
-14 -16 -19
-8 -8 -9
+30.8 +30.8 +30.7
+44 +44.2 +44.3
3.6 3.5 3.5
+ 8 V
250 mA
-Vgg
C1
33 pF
RF IN
Z1
C13
2.4 pF
1000 pF
33 pF
R1
20 Ω
2.4 pF
L1
10 nH
Z2 Z3
R2
5.1 Ω
10
0
-10
-20
S11, S22, S12 (dB)
-30
1800 1850 1900 1950 2000 2050 2100
C4
C3
C2
FP2189
PIN 1
Sot-89
PIN 2,4
The Communications Edge TM
Preliminary Product Information
S-Parameters vs Frequency
S22
S11
Frequency ( MHz)
Vdd
+ 8 V @ 250 mA
C8
0.1 µF
C6
33 pF
C7
1000 pF
L2
PIN 3
22 nH
Z4
C9
33 pF
C5
1.5 pF
16
S21
14
12
S21 (dB)
10
8
RF OUT
Ref. Designator Length on .014”
Z1 30 3.1
Z2 145 14.8
Z3 50 5.1
Z4 255 26.1
The lengths are measured from the component edge-to-edge.
All micro strip lines have a line impedance of 50 Ω.
GETEKTM (mil)
Electrical length @
1900 MHz (deg)
Ref. Designator Value Part style Size
C1, C3, C6, C9 33 pF 5% 50V, NPO/COG 0603
C2, C13 2.4 pF AVX 06035J2R4AAWTR 0603
C4, C7 1000 pF 5% 50V, NPO/COG 0603
C5 1.5 pF AVX 06035J1R5AAWT R 0603
C8 0.1 µF 10%, 50V, X7R 1206
R1 20 Ω 1/16 W, 5% 0603
R2 5.1 Ω 1/16 W, 5% 0603
L1 10 nH TOKO LL1608-FH10NJ 0603
L2 22 nH TOKO LL1608-FH22NJ 0603
All other parts are No Loads.
Total unique parts count: 9
14 mil GETEKTM ML200DSS (εr = 4.2)
This document contains information on a new product.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com
The layout of this circuit can be downloaded from the website.
Specifications and information are subject to change without notice
• Web site: www.wj.com
May 2002
Page 5
FP2189
1 Watt HFET
Application Circuit: 2110 – 2170 MHz
Typical Specifications
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
1
Idq is the quiescent current at small signal output levels. The current typically
increases up to 320 mA at the 1-dB compression point.
V
dd
1
I
dq
RF IN
2110 2140 2170
13.9 13.8 13.7
-27 -23 -20
-8 -9 -10
+31.4 +31.4 +31.4
+44.5 +45.5 +43.2
4.5 4.5 4.5
+ 8 V
250 mA
-Vgg
C4
22 pF
R1
10 Ω
L1
C1
1.8 pF
Z1
5.6 nH
Z2 Z4
Z3
C4
1.5 pF
R2
5.1 Ω
10
0
-10
-20
S11, S22, S12 (dB)
-30
2000 2050 2100 2150 2200 2250 2300
FP2189
Sot-89
PIN 1
PIN 2,4
The Communications Edge TM
Preliminary Product Information
S-Parameters vs Frequency
S22
S11
Frequency ( MHz)
Vdd
+ 8 V @ 250 mA
C8
0.1 µF
C6
1000 pF
C7
22 pF
L2
PIN 3
18 nH
Z5
C9
22 pF
C5
1.2 pF
RF OUT
16
S21
14
12
S21 (dB)
10
8
Ref. Designator Length on .014”
Z1 150 17.3
Z2 15 1.7
Z3 100 11.5
Z4 50 5.8
Z5 225 25.9
The lengths are measured from the component edge-to-edge.
All micro strip lines have a line impedance of 50 Ω.
GETEKTM (mil)
Electrical length @
2140 MHz (deg)
Ref. Designator Value Part style Size
C1 1.8 pF AVX 06035J1R8AAWTR 0603
C3, C7, C9 22 pF 5% 50V, NPO/COG 0603
C4 1.5 pF AVX 06035J1R5AAWTR 0603
C5 1.2 pF AVX 06035J1R2AAWTR 0603
C6 1000 pF 5% 50V, NPO/COG 0603
C8 0.1 µF 10%, 50V, X7R 1206
R1 10 Ω 1/16 W, 5% 0603
R2 6.2 Ω 1/16 W, 5% 0603
L1 18 nH TOKO LL1608-FH18NJ 0603
L2 5.6 nH TOKO LL1608-FH5N6S 0603
All other parts are No Loads.
Total unique parts count: 10
C3 is of size 0805 on the app board so that it would fit in the 1206 pad.
14 mil GETEKTM ML200DSS (εr = 4.2)
This document contains information on a new product.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com
The layout of this circuit can be downloaded from the website.
Specifications and information are subject to change without notice
• Web site: www.wj.com
May 2002
Page 6
d
d
f
The Communications Edge TM
FP2189
1 Watt HFET
Application Note
Special attention should be taken to properly bias the FP2189. Power supply sequencing
is required to prevent the device from operating at 100% I
time and possibly causing damage to the device. It is recommended that for the safest
operation, the negative supply be “first on and last off.” With a negative gate voltage
present, the drain voltage can then be applied to the device. The gate voltage can then
be adjusted to have the device be used at the proper quiescent bias condition.
An optional temperature-compensation active-bias circuit is recommended for use with
the application circuit, which requires two standard voltage supplies +8V and -4V, an
is set for an optimal drain bias of +8V @ 250 mA. The circuit schematic, shown on the
right, uses dual PNP transistors to provide a constant drain current into the FP2189 an
also eliminates the effects of pinchoff variation. Temperature compensation is achieved
by tracking the voltage variation with the temperature of the emitter-to-base junction o
the PNP transistors. Thus the transistor emitter voltage adjusts the voltage incident at
the gate of the FP2189 so that the device draws a constant current, regardless of the
temperature. Two fixed voltage supplies are needed for operation. A Rohm dual
transistor, UMT1N, and a dual-chip resistor (8.2 kΩ) are recommended to minimize
board space and help decrease the current variability through R4 with the components
being matched to one another. The active-bias circuit can directly be attached to the
voltage supply ports in the circuit diagram as shown above (V
for a prolonged period of
dss
and Vgg).
dd
Outline Drawing Land Pattern Mounting Configuration
Preliminary Product Information
Vdd = +8 V
R4
R3
220 Ω
R5
8.2 kΩ
Vgg = -4 V
R6
8.2 kΩ
4
5 2
3
Connected to Vgg
1 Ω
1%
0805
1
6
on App Circuit
UMT1N
Connected to Vdd
on App Circuit
This document contains information on a new product.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com
Specifications and information are subject to change without notice
• Web site: www.wj.com
May 2002
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