Datasheet FK10VS-10 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FK10VS-10

HIGH-SPEED SWITCHING USE

FK10VS-10

DSS ............................................................................... 500V

¡V
¡r

DS (ON) (MAX) ............................................................. 1.13Ω

¡I

D .........................................................................................10A

¡Integrated Fast Recovery Diode (MAX.) ....... 150ns

OUTLINE DRAWING Dimensions in mm

r

+0.3

–0.5

3.0

q

10.5MAX.

1

qwe

5

wr

e

0.8

1.5MAX.

9.8 ± 0.5

8.6 ± 0.3

1.5MAX.

4.5

2.6 ± 0.4

q GATE
w DRAIN
e SOURCE
r DRAIN

4.5

0.5

1.3

+0.3

0

–0

TO-220S

(1.5)

APPLICATION

Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.

MAXIMUM RATINGS (Tc = 25°C)

Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature

—

Weight

VGS = 0V
VDS = 0V

Typical value

500
±30

10
30
10
30

125
–55 ~ +150
–55 ~ +150

1.2

V
V
A
A
A
A

W

°C
°C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω

IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs

MITSUBISHI Nch POWER MOSFET

FK10VS-10

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

500
±30

—
—

2
—
—

3.3
—
—
—
—
—
—
—
—
—
—

—
—
—
—

3

0.88

4.40

5.5

1100

130

20
20
30
95
35

1.5
—
—

—
—

±10

1.13

5.65
—
—
—
—
—
—
—
—

2.0

1.0
150

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

200

(W)

160

D

120

80

40

POWER DISSIPATION P

0

CASE TEMPERATURE T

C

(°C)

MAXIMUM SAFE OPERATING AREA

5
3

2

1

10

(A)

D

7
5

3
2

0

10

7
5

3

TC = 25°C

2

DRAIN CURRENT I

10

200150100500

–1

7
5

10

Single Pulse

0

23 5710

1

23 5710223 5710

DRAIN-SOURCE VOLTAGE V

DS

(V)

tw=10µs

100µs

1ms

10ms

DC

3

Feb.1999

MITSUBISHI Nch POWER MOSFET

FK10VS-10

HIGH-SPEED SWITCHING USE

OUTPUT CHARACTERISTICS

(TYPICAL)

V

GS

= 20V

10V

TC = 25°C
Pulse Test

(A)

D

20

16

12

8

4

DRAIN CURRENT I

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

40

TC = 25°C
Pulse Test

32

(V)

6V

5V

PD=
125W

ID = 20A

OUTPUT CHARACTERISTICS

(TYPICAL)

V

GS

= 20V 10V 6V

(A)

D

10

8

6

4

2

DRAIN CURRENT I

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

2.0
TC = 25°C
Pulse Test

1.6

(Ω)

V

GS

= 10V

PD = 125W

5V

TC = 25°C
Pulse Test

4V

20V

24

DS (ON)

16

VOLTAGE V

8

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

20

16

(A)

D

12

8

4

DRAIN CURRENT I

10A

GS

(V)

TC = 25°C
VDS = 50V
Pulse Test

5A

1.2

DS (ON)

0.8

0.4

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

5710023 5710123 5710

2310

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

V

DS

= 10V

7

Pulse Test

5

(S)

3



fs

2

0

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

D

(A)

TC=25°C

125°C

2

75°C

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

GS

(V)

–1

10

10–123 5710

DRAIN CURRENT I

0

23 5710

D

(A)

1

Feb.1999

DRAIN-SOURCE VOLTAGE

2

3

10

7
5

3
2

2

10

7
5

CAPACITANCE

3
2

Ciss, Coss, Crss (pF)

Tch = 25°C

1

10

f = 1MHz

7

GS

= 0V

V

5

23 5710

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 5710

Ciss

Coss

Crss

DS

2

(V)

23

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE

SWITCHING CHARACTERISTICS

3

10

7
5

3
2

2

10

7
5

3

SWITCHING TIME (ns)

2

1

10

–1

23 5710

10

(TYPICAL)

DRAIN CURRENT ID (A)

FK10VS-10

Tch = 25°C
VDD = 200V
VGS = 10V
R

GEN

= R

GS

= 50Ω

0

23 5710

t

d(off)

t

t

d(on)

t

f

r

1

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

16

Tch = 25°C
ID = 10A

V

DS

= 100V

(V)

GS

200V

12

400V

8

4

GATE-SOURCE VOLTAGE V

0

0 20406080100

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

DS (ON)

10

1

7
5

VGS = 10V
ID = 1/2I
Pulse Test

(TYPICAL)

D

3
2

0

10

7
5

3
2

–1

10

0

50 100 150 200 250

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

32

(A)

S

TC=125°C

24

16

8

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0
VDS = 10V

ID = 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

25°C

75°C

VGS = 0V
Pulse Test

SD

(V)

Feb.1999

MITSUBISHI Nch POWER MOSFET

FK10VS-10

HIGH-SPEED SWITCHING USE

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

(BR) DSS

(BR) DSS

VGS = 0V

D = 1mA

I

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

DIODE REVERSE VS.

SOURCE CURRENT d

is/dt CHARACTERISTIC

(TYPICAL)

10

5

3
2

trr

2

IS = 10A

GS = 0V

V
V

DD = 250V

7
5

3
2

Irr

1

REVERSE RECOVERY TIME trr (ns)

10

7
5

1

10

23 5710

Tch = 25°C
T

ch = 150°C

2

23 5710

SOURCE CURRENT CHARACTERISTIC

3

10

dis/dt = –100A/µs

7

GS = 0V

V

5

DD = 250V

V

3
2

2

10

trr
7
5

3
2

REVERSE RECOVERY TIME trr (ns)

1

10

0

23 5710

10

TRANSIENT THERMAL IMPEDANCE

5

3
2

10
7

5

3
2

10
7

5

3

1

0

1

10

7

rr (A)

5
3

2

D=1

0

10

7

0.5

5

0.2

3
2

0.1

–1

10

7
5

3
2

–2

10

REVERSE RECOVERY CURRENT I

10

–4

23 57

0.05

0.02

0.01

Single Pulse

–3

23 57 23 57 23 57

10

DIODE REVERSE VS.

(TYPICAL)

Irr

Tch = 25°C

ch = 150°C

T

1

23 5710

SOURCE CURRENT IS (A)

CHARACTERISTICS

PDM

10

–2

10

–1

10023 57

tw

D=

T

tw

T

2

10

7
5

3
2

1

10

7
5

3
2

0

10

2

10123 57

rr (A)

REVERSE RECOVERY CURRENT I

2

10

SOURCE CURRENT dis/dt (–A/µs)

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

PULSE WIDTH t

w (s)

Feb.1999