Datasheet FJX992 Datasheet (Fairchild)

Page 1
FJX992 PNP Audio Frequency Low Noise Amplifier
Features
• High Voltage : V
• Excellent h
• High h
Linearity
FE
: hFE = 200~700
FE
= -120V
1. Base 2. Emitter 3. Collector
3
1
SOT-323
FJX992 — PNP Audio Frequency Low Noise Amplifier
August 2010
2
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J , TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
Collector-Emitter Voltage -120 V Collector-Base Voltage -120 V Emitter-Base Voltage -5 V Collector Current -100 mA Junction and Storage Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θja
Total Device Dissipation Derate above T
= 25°C
a
235
1.88
mW
mW/°C
Thermal Resistance, Junction to Ambient 530 °C/W
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FJX992 Rev. A0 1
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FJX992 — PNP Audio Frequency Low Noise Amplifier
Electrical Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage* IC=-1mA, IB=0 -120 V Collector-Base Breakdown Voltage IC=-100μA, IE=0 -120 V Emitter-Base Breakdown Voltage IE=-10μA, IC=0 -5 V Collector-Base Cutoff Current VCB=-120V, IE=0 -100 nA Emitter-Base Cutoff Current VEB=-5V, IC=0 -100 nA
ON CHARACTERISTICS
h
FE
(sat) Collector-Emitter Saturation Voltage IC=-10mA, IB=-1mA -0.3 V
V
CE
V
(on) Base-Emitter On Voltage VCE=-6V, IC=-1mA -0.65 V
BE
DC Current Gain* VCE=-6V, IC=-0.1mA
=-6V, IC=-2mA
V
CE
150 200 700
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Current Gain - Bandwidth Product VCE=-6V, IC=-1mA 100 MHz Output Capacitance VCB=-10V, IE=0, f=1MHz 4 pF
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FJX992 Rev. A0 2
Page 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
FJX992 — PNP Audio Frequency Low Noise Amplifier
1000
Ta = 125 oC
Tj = 25 oC
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
Tj = 100 oC
Tj = 75 oC
IC [mA], COLLECTOR CURRENT
VCE = 6V
1
IC = 10 I
B
Tj = 125 oC
0.1
Tj = 25 oC
(sat),[V] SATURATION VOLTAGE
CE
V
0.01
0.1 1 10 100
Tj = 100 oC
Tj = 75 oC
IC [mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
IC = 10 I
B
1
Tj = 125 oC
Tj = 25 oC
(sat)[V], SATURATION VOLTAGE
BE
V
0.1
0.1 1 10 100
Tj = 100 oC
Tj = 75 oC
IC [mA], COLLECTOR CURRENT
50
VCE = 6V
40
30
20
10
[mA], COLLECTOR CURRENT
C
I
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj = 125 oC
Tj = 100 oC
Tj = 75 oC
Tj = 25 oC
VBE(on) [V], BASE-EMITTER ON VOLTAGE
Figure 5. Collector-Emitter Cutoff Current Figure 6. Base-Emitter Cutoff Current
100
10
1
0.1
[nA], Collector-Base Cutoff Current
CBO
I
0.01 10 100
Tj = 125 oC
Tj = 100 oC
Tj = 75 oC
Tj = 25 oC
VCB [V], Collector-Base Volta g e
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FJX992 Rev. A0 3
10000
Tj = 125 oC
1000
100
10
1
Tj = 100 oC
Tj = 75 oC
Tj = 25 oC
[pA], Emitter-Base Cutoff Current
EBO
I
0.1 12345
VEB [V], Emitter-Base Voltage
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Collector Output Capacitance Figure 8. Collector Input Capacitance
10
9 8 7
6 5
4
3
f = 1MH z
100
f = 1MH z
10
FJX992 — PNP Audio Frequency Low Noise Amplifier
2
[pF], Output Capacitance
OB
C
1
12345678910
VCB [V], Collector-Base Volta g e
[pF], Input Capacitance
IB
C
1
12345
VEB [V], Collector-Base Voltage
Figure 9. Forward Bias Safe Operating Area Figure 10. Transient Thermal Resistance
FBSOA
100
[mA]
C
Icmax
10
1
Collector Current, I
0.1
0.1 1 10 100
Collector-Emitter V oltage, VCE[V]
Vceo(Max)
1
D=1%
2%
0.1
5%
10%
30%
0.01
50%
1E-3
r(t), Normalized Transient Thermal Resistance
1E-4
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
Single Pulse
Rthja(t)=r(t)*Rthja Rthja=530C/W
t1, time(sec)
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FJX992 Rev. A0 4
Page 5
Physical Dimensions
FJX992 — PNP Audio Frequency Low Noise Amplifier
SOT-323
2.00±0.20
3°
1.25±0.10 2.10±0.10
1.00±0.10
0.135
0.275±0.100
+0.04 –0.01
0.10 Min.
0.95±0.15
0.05
3°
+0.05 –0.02
0.90
±0.10
1.30±0.10
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FJX992 Rev. A0 5
Page 6
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As used herein:
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I49
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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