Datasheet fgd3n60lsd Datasheet

tm

FGD3N60LSD

IGBT

FGD3N60LSD IGBT

September 2006

Features

• High Current Capability

• Very Low Saturation Voltage : V

• High Input Impedance

= 1.2 V @ IC = 3A

CE(sat)

Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica tions where very low On-Voltage Drop is a required feature.

Applications

• HID Lamp Applications

• Piezo Fuel Injection Applications

C

G

D-PAK

E

G

C

E

Absolute Maximum Ratings

Symbol Description FGD3N60LSD Units

V

CES

V

GES

I

C

I

CM (1)

I F Diode Continous Forward Current @ TC = 100°C 3 A

I FM Diode Maximum Forward Current 25 A

P

D

TJ Operating Junction Temperature -55 to +150 °C

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V

Gate-Emitter Voltage ± 25 V

Collector Current @ TC = 25°C 6 A

Collector Current @ TC = 100°C 3 A

Pulsed Collector Current

Maximum Power Dissipation @ TC = 25°C 40 W

Derating Factor 0.32 W/°C

Storage Temperature Range -55 to +150 °C

Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds

(1)

25 A

250 °C

-

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

(IGBT)

R

θJA

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

FGD3N60LSD Rev. B

Thermal Resistance, Junction-to-Case -- 3.1 °C/W

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 100 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Wi dth Quantity

FGD3N60LSD FGD3N60LSDTM D-PAK 380mm 16mm 2500

FGD3N60LSD IGBT

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

∆B

VCES

∆T

J

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

C

res

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Ets Total Switching Loss -- 1.25 -- mJ

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Ets Total Switching Loss -- 2.2 -- mJ

Q

g

Q

ge

Q

gc

L

e

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coefficient of Breakdown

VGE = 0V, IC = 1mA -- 0.6 -- V/°C

Voltage

Collector Cut-Off Current VCE = V

G-E Leakage Current VGE = V

G-E Threshold Voltage IC = 3mA, V = V

Collector to Emitter Saturation Voltage

Input Capacitance V

Output Capacitance -- 20 -- pF

IC = 3A, VGE = 10V -- 1.2 1.5 V

IC = 6A, VGE = 10V -- 1.8 -- V

CE

f = 1MHz

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

GE

CE

= 25V, VGE = 0V,

2.5 3.2 5.0 V

-- 185 -- pF

Reverse Transfer Capacitance -- 5.5 -- pF

Turn-On Delay Time VCC = 480 V, IC = 3A,

Rise Time -- 40 -- ns

Turn-Off D elay Time -- 600 -- ns

RG = 470Ω, V Inductive Load, TC = 25°C

GE

= 10V,

-- 40 -- ns

Fall Time -- 600 -- ns

Turn-On Switching Loss -- 250 -- uJ

Turn-Off Switching Loss -- 1.00 -- mJ

Turn-On Delay Time VCC = 480 V, IC = 3A,

Rise Time -- 45 -- ns

Turn-Off D elay Time -- 620 -- ns

RG = 470Ω, V Inductive Load, TC = 125°C

GE

= 10V,

-- 40 -- ns

Fall Time -- 800 -- ns

Turn-On Switching Loss -- 300 -- uJ

Turn-Off Switching Loss -- 1.9 -- mJ

Total Gate Charge VCE = 480 V, IC = 3A,

Gate-Emitter Charge -- 2.8 -- nC

VGE = 10V

-- 12.5 -- nC

Gate-Collector Charge -- 4.9 -- nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

FGD3N60LSD Rev. B

2 www.fairchildsemi.com

FGD3N60LSD IGBT

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 3A TC = 25°C -- 1.5 1.9 V

TC = 100°C -- 1.55 --

Diode Reverse Recovery Time IF = 3A,

di/dt = 100A/us

Diode Peak Reverse Recovery Current TC = 25°C -- 2.64 -- A

VR = 200V

TC = 25°C -- 234 -- ns

TC = 100°C -- -- --

Diode Reverse Recovery Charge TC = 25°C -- 309 -- nC

TC = 100°C -- -- --

FGD3N60LSD Rev. B

3 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

30

Common Emitter T

= 25°C

C

20V

15V

24

[A]

C

18

10V

VGE = 8V

12

Collector Current, I

6

0

02468

Collector-Emitter V oltage, VCE [V]

Figure 3. Typical Output Characteristics Figure 4. Transfer Characteristics

10

Common Em itter

= 10V

V

GE

T

= 25°C

C

8

TC = 125°C

[A]

C

6

30

Common Emitt er

= 125°C

T

C

24

[A]

C

20V

15V

18

12

VGE = 8V

Collector Current, I

6

0

02468

10

Common Em itter VCE = 20V

TC = 25°C

8

TC = 125°C

[A]

C

6

Collector-Emitter Voltage, VCE [V]

FGD3N60LSD IGBT

10V

4

Collector Current, I

2

0

0.1 1 10

Collector-Emitter Voltage, VCE[V]

Figure 5. Saturation Voltage vs. Case

3

Common Em itter VGE = 10V

[V]

CE

2

1

Collector-Emitter Voltage, V

0

0 30 60 90 120 150

Case Temperature, TC [°C]

IC = 6A

IC = 3A

IC = 1.5A

4

Collector Current, I

2

0

110

Gate-Emitter Voltage, VGE[V]

Figure 6. Capacitance Characteristics

600

500

400

300

Capacitance [pF]

200

100

0

Cies

Coes

Cres

110

Collector - Emitter Voltage, VCE [V]

Common Emitter V

= 0V, f = 1MHz

GE

= 25°C

T

C

FGD3N60LSD Rev. B

4 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Gate Charge Figure 8. Turn-On Characteristics vs. Gate

Resistance

FGD3N60LSD IGBT

12

Common Em itter

= 160Ω

R

L

Vcc = 480V

10

= 25°C

T

C

[V]

GE

8

6

4

2

Gate - Emitter Voltage, V

0

024681012

Gate Ch arge, Qg [nC]

1000

100

Switching Time [ns]

10

Common Emitter V

= 480V, VGE = 10V

CC

= 3A

I

C

= 25°C

T

C

= 125°C

T

C

200 400 600 800 1000

Gate Resistance, RG [Ω ]

Ton

Tr

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance

Gate Resistance

10000

1000

Switching Time [ns]

100

Common Emitter V

= 480V, VGE = 10V

CC

I

= 3A

C

= 25°C

T

C

T

= 125°C

C

200 400 600 800 1000

Gate Resistance, RG [Ω ]

Toff

Tf

10000

1000

Switching Loss [µJ]

100

Eoff

Eon

Comm on Emitter

= 480V, VGE = 10V

V

CC

= 3A

I

C

= 25°C

T

C

10

200 400 600 800 1000 Gate Resistance, RG [Ω]

TC = 125°C

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.

Collector Current Collector Current

Common Emitter Vcc = 480V, V

R

100

TC = 25°C

T

C

Switching Time [ns]

10

234

FGD3N60LSD Rev. B

= 470Ω

G

GE

= 125°C

Collector Current, IC [A]

= 10V

1000

Ton

Toff

Tf

Tr

Switching Time [ns]

100

234

Collector Current, IC [A]

Common Emitter Vcc = 480 V, V

= 470Ω

R

G

TC = 25°C

T

= 125°C

C

= 10V

GE

5 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current Figure 14. Forward Characteristics

100

10

[A]

F

Tc = 25°C Tc = 100

°C

1000

Common Emitter Vcc = 480 V, V

= 470Ω

R

G

TC = 25°C

TC = 125°C

GE

= 10V

Eoff

FGD3N60LSD IGBT

Switching Loss [µJ]

100

234

Collector Current, IC [A]

Eon

Figure 15. Forward Voltage Drop Vs Tj Figure 16. SOA Characteristics

2.8

2.4

[V]

F

=6 A

I

2.0

F

1.6

Forward Voltage Drop, V

1.2

25 50 75 100 125

Junction Temperature, Tj [°C]

IF=3 A

IF=1.5 A

1

Forward Current, I

0.1 01234

Forward Voltage Drop, VF [V]

100

Ic MAX (Pulsed)

10

Ic MAX (Continuous)

1

Single Nonrepetitive

0.1

Collector Current, Ic [A]

Pulse Tc = 25°C Curves must be derated linearly with increase in temperature

0.01

0.1 1 10 100 1000

Collector - Emitter Voltage, VCE [V]

DC Operation

Figure 17. Transient Thermal Impedance of IGBT

50µs

100µs

1ms

FGD3N60LSD Rev. B

10

0.5

1

0.2

Thermal Response [Zthjc]

0.1

0.05

0.02

0.1

0.01

0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10

single pulse

Rectangular Pulse Duration [sec]

Pdm

Duty factor D = t1 / t2 Peak Tj = Pdm

6 www.fairchildsemi.com

t1

t2

×

Zthjc + T

C

Mechanical Dimensions

6.60 ±0.20

FGD3N60LSD IGBT

D-PAK

0.60 ±0.20

0.80 ±0.20

MAX0.96

2.30TYP

[2.30±0.20]

5.34 ±0.30

(4.34)(0.50) (0.50)

0.76 ±0.10

2.30TYP

[2.30±0.20]

2.70 ±0.20

0.70 ±0.20

6.10 ±0.20

9.50 ±0.30

±0.10

0.91

0.89 ±0.10

6.60 ±0.20 (5.34)

(5.04) (1.50)

2.30 ±0.10

0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

(0.90)

(0.70)

MIN0.55

(1.00)

FGD3N60LSD Rev. B

(2XR0.25)

6.10 ±0.20

9.50 ±0.30

2.70 ±0.20 (0.10) (3.05)

0.76 ±0.10

Dimensions in Millimeters

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TRADEMARKS

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

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FGD3N60LSD IGBT

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

FGD3N60LSD Rev. B

Rev. I20

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