Page 1
tm
FGA90N33ATD
330V, 90A PDP Trench IGBT
FGA90N33ATD 330V, 90A PDP Trench IGBT
April 2008
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
=1.1V @ IC = 20A
CE(sat)
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica
tions where low conduction and switching losses are essential.
Applications
• PDP System
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
C pulse(1)
I
C pulse(2)
P
D
TJ Operating Junction Temperature -55 to +150
T
stg
T
L
Collector to Emitter Voltage 330 V
Gate to Emitter Voltage ± 30 V
Collector Current @ TC = 25oC 90 A
Pulsed Collector Current @ TC = 25oC 220 A
Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC 223 W
Maximum Power Dissipation @ TC = 100oC 89 W
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25oC
330 A
300
-
o
C
o
C
o
C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.56
θJC
R
(Diode) Thermal Resistance, Junction to Case - 1.16
θJC
R
θJA
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*IC pluse limited by max Tj
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA90N33ATD Rev. A
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGA90N33ATD 330V, 90A PDP Trench IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type
Qty per Tube
FGA90N33ATD FGA90N33ATDTU TO-3P Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400µA 330 - - V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V - - 400 µA
CES
, VCE = 0V - - ±400 nA
GES
G-E Threshold Voltage IC = 250µA, VCE = VGE 2.5 4.0 5.5 V
IC = 20A, VGE = 15V - 1.1 1.4 V
Collector to Emitter Saturation Voltage
IC = 45A, VGE = 15V,
IC = 90A, VGE = 15V,
IC = 90A, VGE = 15V,
TC = 125oC
Input Capacitance
V
= 30V, VGE = 0V,
Output Capacitance - 135 - pF
Reverse Transfer Capacitance - 100 - pF
CE
f = 1MHz
Turn-On Delay Time
Rise Time - 40 - ns
Turn-Off Delay Time - 100 - ns
VCC = 200V, IC = 20A,
RG = 5Ω, V
Resistive Load, TC = 25oC
GE
= 15V,
- 1.3 - V
- 1.6 - V
- 1.7 - V
- 2200 - pF
- 23 - ns
Fall Time - 180 240 ns
Turn-On Delay Time
Rise Time - 40 - ns
Turn-Off Delay Time - 110 - ns
VCC = 200V, IC = 20A,
RG = 5Ω, V
GE
= 15V,
Resistive Load, TC = 125oC
- 20 - ns
Fall Time - 250 300 ns
Total Gate Charge
Gate to Emitter Charge - 12 - nC
Gate to Collector Charge - 40 - nC
VCE = 200V, IC = 20A,
VGE = 15V
- 95 - nC
FGA90N33ATD Rev. A
2 www.fairchildsemi.com
Page 3
FGA90N33ATD 330V, 90A PDP Trench IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
V
FM
t
rr
I
rr
Diode Forward Voltage IF = 10A
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
IF =10A, dI/dt = 200A/µs
Current
Q
rr
Diode Reverse Recovery Charge
TC = 25oC - 1.1 1.5 TC = 125oC - 0.96 TC = 25oC - 23 TC = 125oC - 36 TC = 25oC - 2.8 TC = 125oC
- 5.1 -
TC = 25oC - 32 TC = 125oC - 91 -
nC
V
ns
A
FGA90N33ATD Rev. A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
FGA90N33ATD 330V, 90A PDP Trench IGBT
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
160
TC = 25oC
120
[A]
C
20V
15V
12V
10V
9V
8V
80
7V
40
Collector Current, I
0
012345
VGE = 6V
Collector-Emitter Voltage, VCE [V]
160
TC = 125oC
15V
120
[A]
C
12V
10V
80
40
Collector Current, I
0
012345
Collector -Emitter Voltag e , VCE [V]
20V
9V
8V
7V
VGE = 6V
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
160
120
[A]
C
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
160
120
[A]
C
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
80
40
Collector Current, I
0
01234
Collector-Emitter Voltage, VCE [V]
80
Collector Current, I
40
0
024681012
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
2.0
Common Emitter
VGE = 15V
[V]
1.8
CE
1.6
1.4
1.2
1.0
Collector-Emitter Voltage, V
0.8
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
90A
40A
IC = 20A
[V]
CE
20
16
12
Common Emitter
TC = 25oC
8
40A
4
Collector-Emitter Voltage, V
IC = 20A
0
0 4 8 12 16 20
Gate-Emitter V o ltag e, VGE [V]
90A
GE
FGA90N33ATD Rev. A
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics
FGA90N33ATD 330V, 90A PDP Trench IGBT
Figure 7. Saturation Voltage vs. V
20
16
[V]
CE
Common Emitter
TC = 125oC
Figure 8. Capacitance Characteristics
GE
4000
Common Emitter
VGE = 0V, f = 1 M Hz
3000
C
ies
TC = 25oC
12
2000
Capacitance [pF]
1000
0
0.1 1 10
C
oes
C
res
Collector-Emitter Voltage, VCE [V]
30
8
4
Collector-Emitter Voltage, V
IC = 20A
0
0 4 8 12 16 20
40A
90A
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
15
Common Emitter
TC = 25oC
12
[V]
GE
9
VCC = 100V
200V
6
3
Gate-Emitter Voltage, V
0
0 20406080100
Gate Charge, Qg [nC]
500
100
100µs
[A]
c
10
1ms
10 ms
DC
1
*Notes:
0.1
Collector Current, I
0.01
= 25oC
1. T
C
2. T
= 150oC
J
3. Single Pulse
110100
Collector-Emitter Voltage, VCE [V]
10µs
500
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
FGA90N33ATD Rev. A
Gate Resistance
200
100
t
r
t
d(on)
Common Emitter
Switching Time [ns]
10
0 20406080100
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
Gate Resistance
5500
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
1000
TC = 125oC
100
Switching Time [ns]
10
0 20406080100
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
t
t
d(off)
f
Page 6
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
400
Commo n E mitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
100
t
r
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
t
f
FGA90N33ATD 330V, 90A PDP Trench IGBT
Switching Time [ns]
10
0 20406080100
Collec to r Curren t , IC [A]
t
d(on)
Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics
400
Switching Time [ns]
100
100
0 20406080100
Collector Current, IC [A]
t
d(off)
200
100
100
[A]
C
[A]
F
10
TJ = 125oC
TJ = 25oC
10
1
Collector Curre nt, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
110100
Collector-Emitter Voltage, VCE [V]
600
Forward Current, I
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TC = 25oC
TC = 125oC
Forward Voltage, VF [V]
FGA90N33ATD Rev. A
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
FGA90N33ATD 330V, 90A PDP Trench IGBT
Figure 17. Reverse Recovery Current Figure 18. Stored Charge
4
[A]
rr
Reverse Recovery Currnet, I
3
2
1
0
5
200A/µs
10 20 30 40
Forward Curre n t, IF [A]
di/dt = 100A/µs
60
[nC]
rr
45
30
15
Stored Recovery Charge, Q
0
10 20 30 40
5
Forward Current, IF [A]
Figure 19. Reverse Recovery Current
40
[ns]
rr
30
20
200A/µs
di/dt = 100A/µs
200A/µs
di/dt = 100A/µs
Reverse Recovery Time, t
10
5
10 20 30 40
Forward Current, IF [A]
Figure 20.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
0.001
1E-5 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGA90N33ATD Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
TO-3P
3.80 ±0.20
4.80 ±0.20
+0.15
1.50
–0.05
FGA90N33ATD 330V, 90A PDP Trench IGBT
13.90 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
±0.30]
[5.45
12.76 ±0.20
5.45TYP
±0.30]
[5.45
19.90 ±0.20
3.50 ±0.20
23.40 ±0.20
16.50 ±0.30
18.70 ±0.20
1.40 ±0.20
+0.15
0.60
–0.05
FGA90N33ATD Rev. A
8 www.fairchildsemi.com
Dimensions in Millimeters
Page 9
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FGA90N33ATD 330V, 90A PDP Trench IGBT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
FGA90N33ATD Rev. A
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
www.fairchildsemi.com9
Rev. I34
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