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tm
FGA20N120FTD
1200V, 20A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave oven
• Soft switching applications
=1.6V @ IC = 20A
CE(sat)
December 2007
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica
tions.
C
FGA20N120FTD 1200V, 20A Trench IGBT
-
-
G
TO-3PN
G EC
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
TJ Operating Junction Temperature -55 to +150
T
stg
T
L
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ± 25 V Continuous Collector Current @ TC = 25oC 40 A Continuous Collector Current @ TC = 100oC 20 A Pulsed Collector Current 60 A
Diode Continuous Forward Current
Maximum Power Dissipation @ TC = 25oC 298 W
Maximum Power Dissipation @ TC = 100oC 119 W
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25oC
20 A
300
Thermal Characteristics
o
C
o
C
o
C
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.42
θJC
R
(Diode) Thermal Resistance, Junction to Case - 2.0
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA20N120FTD Rev. A
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGA20N120FTD FGA20N120FTDTU TO-3PN - - 30
FGA20N120FTD 1200V, 20A Trench IGBT
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Ets Total Switching Loss - 1.13 - mJ t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Ets Total Switching Loss - 1.33 - mJ Q
g
Q
ge
Q
gc
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V - - 1 mA
CES
, VCE = 0V - - ±250 nA
GES
G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 5.9 7.5 V
Collector to Emitter Saturation Voltage
TC = 25oC
IC = 20A, VGE = 15V,
TC = 125oC
Input Capacitance
IC = 20A, VGE = 15V
V
= 30V, VGE = 0V,
Output Capacitance - 95 - pF
Reverse Transfer Capacitance - 60 - pF
CE
f = 1MHz
Turn-On Delay Time
- 1.60 2.00 V
- 1.85 - V
- 3080 - pF
- 30 - ns Rise Time - 79 - ns Turn-Off Delay Time - 143 - ns Fall Time - 217 320 ns Turn-On Switching Loss - 0.42 - mJ
VCC = 600V, IC = 20A,
RG = 10Ω, V
Resistive Load, TC = 25oC
GE
= 15V,
Turn-Off Switching Loss - 0.71 1.05 mJ
Turn-On Delay Time
- 29 - ns Rise Time - 93 - ns Turn-Off Delay Time - 147 - ns Fall Time - 259 - ns Turn-On Switching Loss - 0.47 - mJ
VCC = 600V, IC = 20A,
RG = 10Ω, V
Resistive Load, TC = 125oC
GE
= 15V,
Turn-Off Switching Loss - 0.86 - mJ
Total Gate Charge
Gate to Emitter Charge - 23 - nC
Gate to Collector Charge - 65 - nC
VCE = 600V, IC = 20A,
VGE = 15V
- 137 - nC
FGA20N120FTD Rev. A
2 www.fairchildsemi.com
Page 3
FGA20N120FTD 1200V, 20A Trench IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Tes t Condit io ns Min. Typ. Max Units
V
FM
t
rr
Diode Forward Voltage IF = 20A
Diode Reverse Recovery Time
IES =20A,
I
rr
Q
rr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
dI/dt = 200A/µs
TC = 25oC - 1.3 1.7 TC = 125oC - 1.3 TC = 25oC - 447 TC = 125oC - 485 TC = 25oC - 48 TC = 125oC - 50 TC = 25oC - 10.8 TC = 125oC - 12 -
µC
V
ns
A
FGA20N120FTD Rev. A
3 www.fairchildsemi.com
Page 4
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
180
TC = 25oC
20V
150
[A]
C
120
17V
15V
180
TC = 125oC
150
[A]
C
120
20V
17V
15V
90
12V
60
Collector Current, I
30
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
8V
7V
VGE = 6V
Collector-Emitter Voltage, VCE [V]
10V
9V
90
60
7V
Collector Current, I
VGE = 6V
30
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
120
Common Emitter
VGE = 15V
100
TC = 25oC
[A]
TC = 125oC
C
80
60
40
Collector Current, I
20
0
0123456
Collector-Emitter Voltage, VCE [V]
120
Common Emitter
VCE = 20V
100
TC = 25oC
[A]
TC = 125oC
C
80
60
40
Collector Current, I
20
0
3691215
Gate-Emitter Voltage,VGE [V]
12V
10V
8V
9V
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
2.8
Common Emitter
VGE = 15V
[V]
CE
2.4
2.0
1.6
Collector-Emitter Voltage, V
1.2
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
FGA20N120FTD Rev. A
40A
20A
IC = 10A
4 www.fairchildsemi.com
20
[V]
CE
16
12
8
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
20A
IC = 10A
40A
Gate-Emitter Voltage, VGE [V]
GE
Common Emitter
TC = 25oC
Page 5
Typical Performance Characteristics
FGA20N120FTD 1200V, 20A Trench IGBT
Figure 7. Saturation Voltage vs. V
20
16
[V]
CE
12
8
4
Collector-Emitter Voltage, V
0
0 4 8 121620
IC = 10A
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
15
Common Emitter
TC = 25oC
12
[V]
GE
9
VCC = 200V
Common Emitter
TC = 125oC
20A
Figure 8. Capacitance Characteristics
GE
5000
C
4000
ies
3000
40A
400V
600V
2000
Capacitance [pF]
1000
0
110
100
10
[A]
c
1
C
oes
C
res
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10µs
100µs
1ms
10 ms
DC
30
6
*Notes:
0.1
1. T
3
Gate-Emitter Voltage, V
0
0 306090120150
Gate Ch a r g e , Qg [nC]
Collector Current, I
0.01
= 25oC
C
2. T
= 150oC
J
3. Single Pulse
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
2000
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
FGA20N120FTD Rev. A
Gate Resistance
300
100
Switching Time [ns]
10
0 20406080100
t
t
r
d(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
2000
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
1000
TC = 25oC
TC = 125oC
Gate Resistance
Switching Time [ns]
100
70
0 20406080100
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
t
t
f
d(off)
Page 6
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
500
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
t
r
1000
100
t
t
f
d(off)
FGA20N120FTD 1200V, 20A Trench IGBT
Switching Time [ns]
10
10 20 30 40 50
t
d(on)
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance F igure 16. Switchin g Loss vs. Collector Current
4
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
1
Switching Loss [mJ]
0.3
0 20406080100
Gate Resistance, RG [Ω]
E
off
E
on
Common Emitter
VGE = 15V, RG = 10Ω
Switching Time [ns]
TC = 25oC
TC = 125oC
10
10 20 30 40 50
Collector Cu rre n t , IC [A]
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
E
off
E
on
Switching Loss [mJ]
0.1
10 20 30 40 50
Collector Cu rre n t , IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
80
30
[A]
C
10
Collector Current, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
FGA20N120FTD Rev. A
Collector-Emitter Voltage, VCE [V]
2000
10
[A]
F
TJ = 125oC
TJ = 25oC
1
Forward Current, I
0.1
0.00.51.01.52.0
TC = 125oC
TC = 25oC
Forward Voltage, VF [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
FGA20N120FTD 1200V, 20A Trench IGBT
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
60
50
[A]
rr
40
200A/µs
30
20
10
Reverse Recovery Currnet, I
0
5 10152025
di/dt = 100A/µs
Forward Cu rrent, IF [A]
Figure 21.Reverse Recovery Time
1000
800
[ns]
rr
di/dt = 100A/µs
600
200A/µs
400
15000
12000
[nC]
rr
200A/µs
9000
6000
3000
Stored Recovery Charge, Q
0
5 10152025
Forward Curre n t, IF [A]
di/dt = 100A/µs
200
Reverse Recovery Time, t
0
510152025
Forward Cu rre n t, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGA20N120FTD Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
FGA20N120FTD 1200V, 20A Trench IGBT
TO-3PN
FGA20N120FTD Rev. A
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
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FGA20N120FTD 1200V, 20A Trench IGBT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor
No Identification Needed Full Production
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FGA20N120FTD Rev. A
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