Page 1
tm
FGA15N120FTD
1200V, 15A Field Stop Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
•RoHS complaint
Applications
• Induction heating and Microwave oven
• Soft switching applications
=1.58V @ IC = 15A
CE(sat)
January 2008
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor
mances, and easy parallel operation with exceptional avalanche
ruggeness. This device is designed for soft switching applica
tions.
C
FGA15N20FTD 1200V, 15A Trench IGBT
-
-
G
GEC
TO-3PN
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
TJ Operating Junction Temperature -55 to +150
T
stg
T
L
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ± 25 V Collector Current @ TC = 25oC 30 A Collector Current @ TC = 100oC 15 A Pulsed Collector Current 45 A
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation @ TC = 25oC 220 W
Maximum Power Dissipation @ TC = 100oC 88 W
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 100oC
15 A
90 A
300
Thermal Characteristics
o
C
o
C
o
C
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.57
θJC
R
(Diode) Thermal Resistance, Junction to Case - 2.1
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA15N120FTD Rev. A
Thermal Resistance, Junction to Ambient - 62.5
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGA15N120FTD FGA15N120FTDTU TO-3PN - - 30
FGA15N120FTD 1200V, 15A Trench IGBT
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Ets Total Switching Loss - 0.88 - mJ t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Ets Total Switching Loss - 1.27 - mJ Q
g
Q
ge
Q
gc
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V - - 1 mA
CES
, VCE = 0V - - ±250 nA
GES
G-E Threshold Voltage IC = 15mA, VCE = VGE 3.5 6 7.5 V
IC = 15A, VGE = 15V - 1.58 2 V
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 70 - pF
IC = 15A, VGE = 15V,
TC = 125oC
V
= 30V, VGE = 0V,
CE
f = 1MHz
- 1.83 - V
- 2350 - pF
Reverse Transfer Capacitance - 45 - pF
Turn-On Delay Time
- 33 - ns
Rise Time - 80 - ns
Turn-Off Delay Time - 160 - ns
Fall Time - 255 330 ns
Turn-On Switching Loss - 0.3 - mJ
VCC = 600V, IC = 15A,
RG = 15Ω, V
Resistive Load, TC = 25oC
GE
= 15V,
Turn-Off Switching Loss - 0.58 0.74 mJ
Turn-On Delay Time
- 30 - ns Rise Time - 115 - ns Turn-Off Delay Time - 170 - ns Fall Time - 390 - ns Turn-On Switching Loss - 0.38 - mJ
VCC = 600V, IC = 15A,
RG = 15Ω, V
GE
= 15V,
Resistive Load, TC = 125oC
Turn-Off Switching Loss - 0.89 - mJ
Total Gate Charge
Gate to Emitter Charge - 19 - nC
VCE = 600V, IC = 15A,
VGE = 15V
- 100 - nC
Gate to Collector Charge - 45 - nC
FGA15N120FTD Rev. A
2 www.fairchildsemi.com
Page 3
FGA15N120FTD 1200V, 15A Trench IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Tes t Condit io ns Min. Typ. Max Units
V
FM
t
rr
Diode Forward Voltage IF = 15A
Diode Reverse Recovery Time
IES =15A,
I
rr
Q
rr
Diode Peak Reverse Recovery Cyrrent
Diode Reverse Recovery Charge
dI/dt = 200A/µs
TC = 25oC - 1.4 1.8 TC = 125oC - 1.42 TC = 25oC - 575 TC = 125oC - 577 TC = 25oC - 30 TC = 125oC - 37 TC = 25oC - 8.7 TC = 125oC - 10.7 -
µC
V
ns
A
3 www.fairchildsemi.comFGA15N120FTD Rev. A
Page 4
FGA15N120FTD 1200V, 15A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
120
TC = 25oC
90
[A]
C
15V
20V
17V
12V
120
TC = 125oC
90
[A]
C
15V
20V
17V
12V
60
30
Collector Current, I
0
024681012
10V
VGE = 8V
Collector-Emitter Voltage, VCE [V]
60
10V
30
Collector Current, I
VGE = 8V
0
024681012
Collector -Emitter Voltag e , VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
100
Common Emitter
VGE = 15V
80
TC = 25oC
TC = 125oC
[A]
C
60
40
Collector Current, I
20
0
0123456
Collector-Emitter Voltage, VCE [V]
100
Common Emitter
VCE = 20V
TC = 25oC
80
[A]
TC = 125oC
C
60
40
Collector Current, I
20
0
2468101214
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
2.8
Common Emitter
VGE = 15V
[V]
CE
2.4
2.0
1.6
Collector-Emitter Voltage, V
1.2
25 50 75 100 125 150
Collector-EmitterCase Temperature, TC [oC]
FGA15N120FTD Rev. A
30A
15A
IC = 10A
4 www.fairchildsemi.com
20
[V]
CE
16
12
8
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
15A
IC = 10A
30A
Gate-Emitter Voltage, VGE [V]
GE
Common Emitter
TC = 25oC
Page 5
Typical Performance Characteristics
FGA15N120FTD 1200V, 15A Trench IGBT
Figure 7. Saturation Voltage vs. V
20
16
[V]
CE
Common Emitter
TC = 125oC
Figure 8. Capacitance Characteristics
GE
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
3000
C
ies
12
2000
8
Capacitance [pF]
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
15A
IC = 10A
30A
1000
0
110
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
15
Common Emitter
TC = 25oC
[V]
GE
10
5
Gate-Emitter Voltage, V
0
0306090120
Gate Ch a r g e , Qg [nC]
VCC = 200V
600V
400V
200
IC MAX (Pulse)
100
[A]
10
c
Collector Current, I
IC MAX (Continuous)
1
*Notes:
1. T
0.1
2. T
3. Single Pulse
0.01
1 10 100 1000
C
oes
C
res
Collector-Emitter Voltage, VCE [V]
1ms
10ms
DC Operation
= 25oC
C
= 150oC
J
Collector-Emitter Voltage, VCE [V]
30
10µs
100µs
2000
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
FGA15N120FTD Rev. A
Gate Resistance
300
100
t
r
t
Switching Time [ns]
10
0 20406080100
d(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
2000
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
1000
TC = 25oC
TC = 125oC
Gate Resistance
Switching Time [ns]
100
70
0 20406080100
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
t
d(off)
t
f
Page 6
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
600
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
1000
t
t
r
f
FGA15N120FTD 1200V, 15A Trench IGBT
100
t
d(on)
Switching Time [ns]
10
10 15 20 25 30
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance F igure 16. Switchin g Loss vs. Collector Current
10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
E
1000
off
E
on
Switching Loss [µJ]
100
0 20406080100
Gate Resistance, RG [Ω]
100
Common Emitter
VGE = 15V, RG = 15Ω
Switching Time [ns]
TC = 25oC
TC = 125oC
10
10 15 20 25 30
Collector Current, IC [A]
10000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
1000
Switching Loss [µJ]
100
10 15 20 25 30
Collector Current, IC [A]
t
d(off)
E
E
off
on
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
40
80
10
[A]
[A]
C
10
Collector C urrent, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
FGA15N120FTD Rev. A
Collector-Emitter Voltage, VCE [V]
2000
F
TJ = 125oC
TJ = 25oC
1
Forward Current, I
0.1
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF [V]
6 www.fairchildsemi.com
TC = 25oC
TC = 125oC
Page 7
Typical Performance Characteristics
FGA15N120FTD 1200V, 15A Trench IGBT
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
40
[A]
rr
30
20
200A/µs
di/dt = 100A/µs
10
Reverse Recovery Currnet, I
0
5 1015202530
Forward Cu rrent, IF [A]
Figure 21.Reverse Recovery Time
800
[ns]
rr
di/dt = 100A/µs
600
200A/µs
14000
12000
[nC]
rr
10000
8000
6000
4000
2000
Stored Recovery Charge, Q
0
5 1015202530
Forward Current, IF [A]
200A/µs
di/dt = 100A/µs
400
Reverse Recovery Time, t
200
5 1015202530
Forward Curre n t, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGA15N120FTD Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
FGA15N120FTD 1200V, 15A Trench IGBT
TO-3PN
FGA15N120FTD Rev. A
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EZSWITCH™ *
™
Fairchild
®
®
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FlashWriter
®
*
FPS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
®
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP-SPM™
Power220
SM
POWEREDGE
Power-SPM™
PowerTrench
Programmable Active Droop™
QFET
®
®
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
®
FGA15N120FTD 1200V, 15A Trench IGBT
* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
9 www.fairchildsemi.comFGA15N120FTD Rev. A
Loading...