Datasheet FDZ193P Datasheet (Fairchild)

June 2009

G

P-Channel 1.7V PowerTrench

FDZ193P
P-Channel 1.7V PowerTrench

-20V, -1A, 90m:

Features

 Max r

 Max r

 Max r

 Occupies only 1.5 mm

area of 2 x 2 BGA

 Ultra-thin package: less than 0.65 mm height when mounted

to PCB

 RoHS Compliant

= 90m: at VGS = -4.5V, ID = -1A

DS(on)

= 130m: at VGS = -2.5V, ID = -1A

DS(on)

= 300m: at VGS = -1.7V, ID = -1A

DS(on)

2

of PCB area Less than 50% of the

S

S

D

S

D

PIN 1

PIN 1

®

WL-CSP MOSFET

General Description

Designed on Fairchild's advanced 1.7V PowerTrench® process
with state of the art "low pitch" WLCSP packaging process, the
FDZ193P minimizes both PCB space and r
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r

DS(on)

.

. This advanced

DS(on)

Application

 Battery management

 Load switch

 Battery protection

S

G

tm

®

WL-CSP MOSFET

BOTTOM

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -20 V

Gate to Source Voltage ±12 V

Drain Current -Continuous (Note 1a) -3

-Pulsed -15

Power Dissipation (Note 1a) 1.9

Power Dissipation (Note 1b) 0.9

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

TOP

D

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 65

Thermal Resistance, Junction to Ambient (Note 1b) 133

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

2 FDZ193P WL-CSP 7’’ 8mm 5000 units

A

W

°C/W

©2009 Fairchild Semiconductor Corporation
FDZ193P Rev.C2 (W)

1

www.fairchildsemi.com

P-Channel 1.7V PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -20 V

Breakdown Voltage Temperature
Coefficient

I

= -250PA, referenced to 25°C -11 mV/°C

D

Zero Gate Voltage Drain Current VDS = -16V, VGS= 0V -1 PA

Gate to Source Leakage Current VGS = ±12V, VGS= 0V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

I

D(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -0.6 -0.9 -1.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

I

= -250PA, referenced to 25°C 3 mV/°C

D

= -4.5V, ID = -1A 66 90

V

GS

V

= -2.5V, ID = -1A 92 130

GS

= -1.7V, ID = -1A 195 300

V

GS

= -4.5V, ID = -1A TJ = 125°C 84 123

V

GS

On to State Drain Current VGS = -4.5V, VDS= -5V -10 A

Forward Transconductance VDS = -5V, ID = -1A 5.6 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 150 pF

Reverse Transfer Capacitance 90 pF

= -10V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 9.5 :

660 pF

®

WL-CSP MOSFET

m:

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 10 20 ns

Turn-Off Delay Time 28 45 ns

VDD = -10V, ID = -1A
V

= -4.5V, R

GS

GEN

= 6:

13 23 ns

Fall Time 21 34 ns

Total Gate Charge at 10V VGS= 0V to 10V

Gate to Source Gate Charge 1 nC

V
I

D

= -10V

DD

= -1A

710nC

Gate to Drain “Miller” Charge 2 nC

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Notes:

1: R

TJA

side of the solder ball, R
are guaranteed by design while R

2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

Maximum continuous Drain-Source Diode Forward Current -1.1 A

Source to Drain Diode Forward Voltage VGS= 0V, IS= -1.1A (Note 2) -0.7 -1.2 V

Reverse Recovery Time

Reverse Recovery Charge 6 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board

is defined for reference. For R

TJB

is determined by the user's board design.

TJA

a. 65°C/W when mounted on
a 1 in
X 1 .5” X 0.0 62” thi ck P CB

the thermal reference point for the case is defined as the top surface of the copper chip carrier. R

TJC

2

pad of 2 oz copper,1.5”

= -1A, di/dt = 100A/Ps

I

F

b. 133°C/W when mounted on a
minimum pad of 2 oz copper

19 ns

TJC

and R

TJB

FDZ193P Rev.C2 (W)

2

www.fairchildsemi.com

P-Channel 1.7V PowerTrench

:

Typical Characteristics T

16

VGS = -4.5V

14

12

10

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

1.4

ID = -1A

= -4.5V

V

GS

1.3

1.2

1.1

1.0

NORMALIZED

0.9

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

VGS = -3V

VGS = -3.5V

= 25°C unless otherwise noted

J

VGS = -2.5V

VGS = -2V

VGS = -1.7V

2.0

PULSE DURATION = 300Ps

1.8

1.6

VGS = -2V

DUTY CYCLE = 2.0%MAX

VGS = -2.5V

1.4

1.2

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8
0246810121416

-ID, DRAIN CURRENT(A)

vs Drain Current and Gate Voltage

, DRAIN TO

r

DS(on)

)

(m

240

200

160

120

ID= -1A

80

TJ= 25oC

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

TJ= 125oC

V

V

V

GS

GS

GS

=-3V

=-3.5V

=-4.5V

®

WL-CSP MOSFET

0.8

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

16

14

12

10

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

FDZ193P Rev.C2 (W)

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

V

= -5V

DD

TJ= 125oC

TJ = -55oC

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

SOURCE ON-RESISTANCE

40

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-VGS, GATE TO SOURCE VOLTAGE (V)

F i g u re 4 . O n - R e si s t a n c e v s G a t e t o

Source Voltage

10

VGS= 0V

1

TJ= 125oC

0.1

0.01

1E-3

, REVERSE DRAIN CURRENT (A)

S

I

1E-4

0.2 0.4 0.6 0.8 1.0 1.2

TJ = 25oC

TJ = -55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Forward Voltage vs Source Current

3

www.fairchildsemi.com

P-Channel 1.7V PowerTrench

T

Typical Characteristics T

5

ID= -1A

4

3

2

1

, GATE TO SOURCE VOLTAGE(V)

GS

0

-V

0246810

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

3.5

3.0

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

-I

0.5

R

0.0
25 50 75 100 125 150

F i g u re 9 . M a x i mu m C o n t i n uo u s D r a i n

Current vs Ambient Temperature

VDD= -5V

Qg, GATE CHARGE(nC)

V

GS

V

GS

=65oC/W

JA

TA, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

J

VDD= -10V

VDD= -15V

= -4.5V

= -2.5V

2000

1000

CAPACITANCE (pF)

f = 1MHz

100

V

= 0V

GS

50

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

30

10

1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.1

SINGLE PULSE

, DRAIN CURRENT (A)

T

D

-I

R

T

0.01

0.1 1 10

= MAX RATED

J

= 133oC/W

TJA

= 25OC

A

DS(on)

-VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 0. F or w ar d Bi as Sa f e

Operating Area

C

iss

C

oss

C

rss

®

20

100us

1ms

10ms

100ms
1s

10s
DC

80

WL-CSP MOSFET

10

), PEAK TRANSIENT POWER (W)

PK

P(

0.5

FDZ193P Rev.C2 (W)

50

VGS = 10V

FOR TEMPERATURES

o

ABOVE 25

CURRENT AS FOLLOWS:

1

-3

10

SINGLE PULSE

-2

10

-1

10

0

10

1

10

I = I

25

C DERATE PEAK

150 TA–

------------------------

125

TA = 25oC

2

10

3

10

t, PULSE WIDTH (s)

Figure 11. Single Pulse Maximum Power Dissipation

4

www.fairchildsemi.com

P-Channel 1.7V PowerTrench

T

Typical Characteristics T

2

1

JA

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

-3

10

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-2

10

= 25°C unless otherwise noted

J

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 12. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

TJA

TJA

A

®

WL-CSP MOSFET

2

10

3

10

FDZ193P Rev.C2 (W)

5

www.fairchildsemi.com

P-Channel 1.7V PowerTrench

®

WL-CSP MOSFET

FDZ193P Rev.C2 (W)

6

www.fairchildsemi.com

TRADEMARKS

®

m

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *

™*

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™

®

tm

®

®

®

®

*

®

F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR

®

tm

PDP SPM™
Power-SPM™

®

®

SM

®

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™

®

®

™

®

®*

The Power Franchise

TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
PSerDes™

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

®

t

®

®

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

P-Channel 1.7V PowerTrench

®

WL-CSP MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDZ193P Rev.C2 (W)

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

7

www.fairchildsemi.com

Rev. I40