Datasheet FDW6923 Datasheet (Fairchild Semiconductor)

May 2002

FDW6923

P-Channel 2.5V Specified PowerTrench



MOSFET with Schottky Diode

FDW6923

General Description

This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolat ed from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter appli cations.

Applications

• DC/DC conversion

A

A

A

C

G

S

S

D

TSSOP-8

Pin 1

MOSFET Absolute Maximum Ratings T

Features

• –3.5 A, –20 V. R
R

• V

< 0.55 V @ 1 A

F

• High performance trench te chnology for extremely

low R

• Low profile TSSOP-8 package

DS(ON)

5
6
7
8

= 0.045 Ω @ VGS = –4.5 V

DS(ON)

= 0.075 Ω @ VGS = –2.5 V

DS(ON)

4
3
2
1

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1)
– Pulsed

PD
TJ, T

STG

MOSFET Power Dissipation (minimum pad)
Schottky Power Dissi pation (minimum pad)

Operating and Storage Junction Temperature Range -55 to +150

(Note 1)

(Note 1)

–20

± 12

–3.5

–30

1.2

1.0

V
V
A

W
°C

Schottky Maximum Ratings

V

Repetitive Peak Reverse Volt age 20 V

RRM

IF Average Forward Current 1.5 A
IFM Peak Forward Current 30 A

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient
(minimum pad)

(Note 1)

MOSFET: 115

Schottky: 130

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

6923 FDW6923 13’’ 16mm 3000 units

2002 Fairchild Semiconductor International

FDW6923 Rev . D(W)

°C/W

FDW6923

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA

Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA

V

= 0 V, ID = –250 µA

GS

= –250 µA, Referenced to25°C

I

D

–20 V

–16

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –15 A

D(on)

V

= VGS, ID = –250 µA

DS

= –250 µA, Referenced to25°C

I

D

V

= –4.5 V, ID = –3.5 A

GS

= –2.5 V, ID = –2.7 A

V

GS

=–4.5 V, ID =–3.5A, TJ=125°C

V

GS

–0.6 –1.0 –1.5 V

3

36
56
49

45
75
72

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –3.5A 13.2 S

Dynamic Characteristics

C

Input Capacitance 1030 pF

iss

C

Output Capacitance 280 pF

oss

C

Reverse Transfer Capacitance

rss

= –10 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

120 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 11 20 ns

d(on)

tr Turn–On Rise Time 18 32 ns
t

Turn–Off Delay Time 34 55 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 9.7 16 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge

= –5 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

V

= –5V, ID = –3.5 A,

DS

= –4.5 V

V

GS

GEN

= 6 Ω

34 55 ns

2.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.25 A
VSD Drain–Source Diode Forward

VGS = 0 V, IS = –1.25 A (Note 2) –0.6 –1.2 V

Voltage

I

Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA

GSSR

Schottky Diode Characteristics

IR Reverse Leakage VR = 20V

VF Forward Voltage IF = 1A

TJ=25°C
T

=125°C

J

TJ=25°C
T

=125°C

J

CT Junction Capacitance VR = 10V 50 pF

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of

θJA

the drain pins. R

R

is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad.

θJA

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

0.6 50
1 8 mA

0.48 0.55 V

0.42 0.50 V

FDW6923 Rev . D (W)

µA

Typical Characteristics

FDW6923

30

VGS = -4.5V

-4.0V

24

18

12

6

0

012345

-3.5V

-

-2.5V

, DRAIN-SOURCE VOL TAG E (V)

-V

DS

-2.0V

1.6

VGS = -2.5V

1.4

1.2

1

0.8
0 5 10 15 20 25 30

-3.0V

-3.5V

, DRAIN CURRENT (A)

- I

D

-4.0V

-4.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = -3.5A

V

= -4.5V

GS

1.4

1.2

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.15

0.12

0.09
TA = 125oC

0.06

0.03

0

1.522.533.544.55

TA = 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

ID = -1.7A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = -5V

24

18

12

6

0

0.4 1.3 2.2 3.1 4

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001

0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAG E (V)

-V

SD

with Source Current and Temperature.

FDW6923 Rev . D (W)

A

)

Typical Characteristics

FDW6923

5

ID = -3.5A

4

VDS = -5V

-10V

-15V

3

1800

1500

1200

C

ISS

900

2

1

0

036912

Q

, GATE CHARGE ( nC)

g

600

C

OSS

300

C

0

RSS

0 5 10 15 20

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10

1

TJ = 100oC

0.1

0.01

, FORWARD CURRENT (A)

F

I

0.001
0 0.2 0.4 0.6 0.8 1 1.2

TJ = 25oC

V

, FORWARD VOLTAGE (V)

F

0.01

0.001

0.0001

0.00001

0.000001

, REVERSE CURRENT (

R

I

0.0000001

0.00000001
0 5 10 15 20

TJ = 125oC

TJ = 25oC

V

, REVERSE VOLTAGE (V)

R

f = 1MHz

= 0 V

V

GS

Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.

1

0.1

0.01

0.001

0.0001 0.001 0.01 0.1 1 1 0 100 10 00

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

t

, TIME (sec)

1

θ

R

(t) = r(t) + R

JA

RθJA = 135 °C/W

P(pk

t

1

t

2

- TA = P * RθJA(t)

T

J

Duty Cycle, D = t

θ

JA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.

FDW6923 Rev . D (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOL T
DenseTrench
DOME
EcoSPARK
E2CMOS
EnSigna

TM

TM

FACT
FACT Quiet Series

STAR*POWER is used under license

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC

2

I

C
ISOPLANAR
LittleFET
MicroFET
MicroPak

MICROWIRE
OPTOLOGIC

â

OPTOPLANAR
PACMAN
POP
Power247
PowerTrench

â

QFET
QS
QT Optoelectronics
Quiet Series

SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation

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UHC
UltraFET
VCX

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

â

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5