Datasheet FDW258P Datasheet (Fairchild Semiconductor)

January 2002

FDW258P

P-Channel 1.8V Specified PowerTrench



MOSFET

FDW258P

General Description

This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate

Features

• –9 A, –12 V. R

R

R

= 11 mΩ @ VGS = –4.5 V

DS(ON)

= 14 mΩ @ VGS = –2.5 V

DS(ON)

= 20 mΩ @ VGS = –1.8 V

DS(ON)

drive voltage (1.8V – 8V).

• Rds ratings for use with 1.8 V logic

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

• Low gate charge

• High performance trench technology for extremely

DS(ON)

low R

• Low profile TSSOP-8 package

D

S

S

D

TSSOP-8

Pin 1

G

S

S

D

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

5

6

7

8

4

3

2

1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –12 V

DSS

V

Gate-Source Voltage

GSS

±8

ID Drain Current – Continuous (Note 1) –9 A

– Pulsed –50

PD Power Dissipation (Note 1a) 1.3 W

TJ, T

STG

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

0.6

V

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 87

(Note 1b)

114

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

258P FDW258P 13’’ 12mm 3000 units

2002 Fairchild Sem iconductor Corporation

°C/W

FDW258P Rev D (W)

FDW258P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V. VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

= –250 µA, Referenced to 25°C

I

D

–12 V

–3

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A

D(on)

V

= VGS, ID = –250 µA

DS

= –250 µA, Referenced to 25°C

I

D

VGS = –4.5 V, ID = –9 A
V

= –2.5 V, ID = –8 A

GS

= –1.8 V, ID = –6.5 A

V

GS

=–4.5 V, ID = –9A, TJ=125°

V

GS

–0.4 –0.6 –1.5 V

3

8.6

10.6

13.8

11.2

11
14
20
14

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –9 A 50 S

Dynamic Characteristics

C

Input Capacitance 5049 pF

iss

C

Output Capacitance 1943 pF

oss

C

Reverse Transfer Capacitance

rss

= –5 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

1226 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 17 31 ns

d(on)

tr Turn–On Rise Time 23 37 ns

t

Turn–Off Delay Time 201 322 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 61 73 nC

Qgs Gate–Source Charge 8 nC

Qgd Gate–Drain Charge

= –6 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –6 V, ID = –9 A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

148 237 ns

16 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.25 A

VSD Drain–Source Diode Forward

VGS = 0 V, IS = –1.25 A (Note 2) –0.6 –1.2 V

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) 87°C/W when

mounted on a 1in2 pad
of 2 oz copper.

b) 114°C/W when mounted

on a minimum pad of 2 oz
copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDW258P Rev . D (W)

)

Typical Characteristics

FDW258P

80

VGS = -4.5V

-3.5V

60

40

, DRAIN CURRENT (A)

D

20

-I

0

00.511.522.53

-2.5V

, DRAIN TO SOURCE VOL TAGE (V)

-V

DS

-2.0V

-1.8V

2.2

2

VGS = - 1.8V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 20406080

-2.0V

-2.5V

-I

, DRAIN CURRENT (A)

D

-3.0V

-3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.3

ID = -9A

= - 4.5V

V

GS

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.025

0.021

0.017

0.013

, ON-RESISTANCE (OHM)

TA = 25oC

0.009

DS(ON)

R

0.005
12345

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-4.5V

ID = -4.5A

Figure 3. On-Resistance Variation with

Temperature.

80

VDS = -5V

60

40

, DRAIN CURRENT (A)

D

20

-I

0

0.5 1 1.5 2 2.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

TA = 125oC

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001

00.20.40.60.81

-V

SD,

25oC

-55oC

BODY DIODE FORW ARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDW258P Rev . D (W)

)

)

Typical Characteristics

FDW258P

5

ID = -9A

4

3

2

1

, GATE-SOURCE VOLTAGE ( V)

GS

-V

0

0 102030405060

Q

, GATE CHARGE ( nC)

g

VDS = -4V

-6V

-8V

7000

6000

5000

C

OSS

C

RSS

0

036912

CAPACITANCE (pF)

4000

3000

2000

1000

C

ISS

, DRAIN TO SOURCE VOL TAGE (V)

-V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A

D

-I

0.01

VGS = -4.5V

0.1

SINGLE PULSE

= 114oC/W

R

θ

JA

T

= 25oC

A

0.01 0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

100ms
1s

10s

DC

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

SINGLE PULSE

R

f = 1 MHz
V

= 114°C/W

θ

JA

= 25°C

T

A

GS

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.1

0.01

0.001

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) + R

θJA

R

= 114oC/W

JA

θ

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

θJA

(t)

θJA

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDW258P Rev . D (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4