Datasheet FDW2502PZ Datasheet (Fairchild Semiconductor)

FDW2502PZ

FDW2502PZ

Dual P-Channel 2.5V Specified PowerTrench MOSFET

March 2000

PRELIMINARY

General Description

This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

G2

S2

S2

D2

G1

S1

S1

D1

TSSOP-8

Pin 1

Features

• –4.4 A, –20 V.R

• Extended V

GSS

• ESD protection diode (note 3).

• High performance trench technology for extremely

low R

DS(ON)

.

• Low profile TSSOP-8 package.

1
2
3
4

= 0.035 Ω @ VGS = –4.5 V

DS(ON)

R

= 0.057 Ω @ VGS = –2.5 V.

DS(ON)

range (±12V) for battery applications.

8
7
6
5

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage –20 V
Gate-Source Voltage ±12 V
Drain Current – Continuous (Note 1a) –4.4 A

– Pulsed –30

Power Dissipation for Single Operation (Note 1a) 1.0 W

(Note 1b)

0.6

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W

(Note 1b)

208

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2502PZ FDW2502PZ 13’’ 12mm 3000 units

2000 Fairchild Semiconductor Corporation

FDW2502PZ Rev. B (W)

Electrical Characteristics T

0.028

0.043

0.035

0.057

FDW2502PZ

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –10
Gate–Body Leakage, Reverse VGS = 12 V VDS = 0 V 10

VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C

–20 V

–17

mV/°C

µA
µA
µA

On Characteristics (Note 2)

V

GS(th)

∆VGS( th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 -1.0 –1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

ID = –250 µA, Referenced to 25°C 3.1 mV/°C
VGS = –4.5 V, ID = –4.4 A

VGS = –4.5 V, ID = –4.4 ,TJ=125°C

0.039

VGS = –2.5 V, ID = –3.3 A

On–State Drain Current VGS = –4.5 V, VDS = –5 V –30 A
Forward Transconductance VDS = –5 V, ID = –4.4 A 17 S

0.056

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1330 pF
Output Capacitance 552 pF
Reverse Transfer Capacitance

VDS = –10 V, V
f = 1.0 MHz

GS

= 0 V,

153 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)
r
d(off)
f

g
gs
gd

Turn–On Delay Time 12 25 ns
Turn–On Rise Time 19 40 ns
Turn–Off Delay Time 60 100 ns
Turn–Off Fall Time
Total Gate Charge 14 20 nC
Gate–Source Charge 3.0 nC
Gate–Drain Charge

VDD = –10 V, ID = –1 A,
VGS = –4.5 V, R

GEN

= 6 Ω

VDS = –5 V, ID = –4.4 A,
VGS = –4.5 V

37 70 ns

3.9 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

a) R

b) R

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

Maximum Continuous Drain–Source Diode Forward Current –0.83 A
Drain–Source Diode Forward

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

θJA

is guaranteed by design while R

θJC

is 125°/W (steady state) when mounted on 1 inch² copper pad on FR-4.

is 250°/W (steady state) when mounted on minimum copper pad on FR-4.

θCA

VGS = 0 V, IS = –0.83 A (Note 2) -0.7 –1.2 V

is determined by the user's board design.

FDW2502PZ Rev. B (W)

Typical Characteristics

FDW2502PZ

30

20

10

, DRAIN CURRENT (A)

D

– I

0

0 1 2 3

VGS = -4.5V -3.5V

-4.0V

– VDS, DRAIN-SOURCE VOLTAGE (V)

-3.0V

-2.5V

-2.0V

2

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 5 10 15 20 25 30

VGS = -2.5V

-3.0V

-3.5V

-4.0V

-ID, DRAIN CURRENT (A)

-4.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = -4.4A

VGS = - 4.5V

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.12

0.1

0.08

0.06

0.04

, ON-RESISTANCE (OHM)

DS(ON)

0.02

R

0

1 2 3 4 5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

TA = 25oC

ID = -4.4 A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = - 5V

25

20

15

10

, DRAIN CURRENT (A)

D

-I

5

0

0 1 2 3 4

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

125

25oC

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TA = 125oC

25oC -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDW2502PZ Rev. B (W)

Typical Characteristics

RSS

P(pk)

0.02

0.1

0.2

FDW2502PZ

5

ID = - 4.4A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 3 6 9 12 15

Qg, GATE CHARGE (nC)

VDS = - 5V

-10V

–15V

2100

1800

1500

1200

900

600

CAPACITANCE (pF)

300

0

0 5 10 15 20

C

ISS

C

OSS

C

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

100ms

1s

10ms

1ms

100µs

R

LIMIT

DS(ON)

10

1

VGS = -4.5V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

D

I

R

= 250oC/W

θ

JA

TA = 25oC

0.01

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

DC

20

SINGLE PULSE

R

= 250°C/W

15

10

5

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100

t1, TIME (sec)

θJA

TA = 25°C

f = 1MHz

VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

D = 0.5

0.05

0.01

SINGLE PULSE

RθJA(t) = r(t) + RθJA

RθJA = 250 °C/W

t1

TJ - TA = P * R

Duty Cycle, D = t 1 / t2

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.

FDW2502PZ Rev. B (W)

t2

JA(t)

θ

TSSOP-8 Package Dimensions

TSSOP-8 (FS PKG Code S4)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in millimeters

Part Weight per unit (gram): 0.0334

January 2000, Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™

2

E

CMOS

TM

FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D