Datasheet FDR836P Datasheet (Fairchild Semiconductor)

FDR836P

P-Channel 2.5V Specified MOSFET

FDR836P

April 1999

General Description

SuperSOT
field effect transistors are produced using Fairchild’s
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to mini­mize on-state resistance and provide superior switch­ing performance. These devices are particularly suited
for low voltage applications such as battery powered
circuits or portable electronics where low in-line power
loss, fast switching and resistance to transients are
needed.

Absolute Maximum Ratings

TM

-8 P-Channel enhancement mode power

S

D

D

S

G

SuperSOT -8

TM

D

D

D

TA = 25°C unless otherwise noted

Features

• -6.1 A, -20 V. R

R

• High density cell design for extremely low R

= 0.030 W @ VGS = -4.5 V

DS(ON)

= 0.040 W @ VGS = -2.5 V

ON)

DS(

DS(ON)

.

• Small footprint (38% smaller than a standard SO-8); low

profile package (1 mm thick); power handling capability
similar to SO-8.

5

6

7
8

4

3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

(Note 1a)

8V

±

-6.1 A

- Pulsed -18

Power Dissipation for Single Operation

(Note 1a)
(Note 1b)

(Note 1c)

1.8 W

1.0

0.9

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-t o-Amb i ent
Thermal Resistance, Junction-t o-Case

(Note 1a)
(Note 1)

70
20

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

836P

.

ã1999 Fairchild Semiconductor Corporation

FDR836P 13’’ 12mm 3000 units

C

°

C/W

°

C/W

°

FDR836P, Rev. C

FDR836P

yp

)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V

DSS

Breakdown Voltage Temperature
Coefficient

J

ID= -250 µA, Referenced to 25°C-24mV/

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.4-0.6-1V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = -250 µA, Referenced to 25°C3mV/

VGS = -4.5 V, ID = -6.1 A
V

= -4.5V, ID =-6.1 A,TJ=125°C

GS

V

= -2.5 V, ID = -5 A

GS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -9 A
Forward Transconductance VDS = -5 V, ID = -6.1A 22 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 2200 pF
Output Capacitance 570 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance

Max Units

0.030

0.022

0.048

0.031

0.040

0.029

140 pF

C

°

A

µ

C

°

Ω

(Note 2)

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g

gs

gd

Turn-On Delay Time 10 18 ns
Turn-On Rise Time 14 25 ns
Turn-Off Delay Time 225 360 ns
Turn-Off Fall Time
Total Gate Charge 32 44 nC
Gate-Source Charge 3.2 nC
Gate-Drain Charge

V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

= -10 V, ID = -6.1 A,

V

DS

V

= - 4.5 V

GS

GEN

= 6

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

surface of the drain Pins. R

Maximum Continuous Drain-Source Diode Forward Current -1.5 A
Drain-Source Diode Forward Voltage V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

qJA

is guaranteed by design while R

qJC

a) 70°C/W when mounted on a

1.0 in2 pad of 2 oz. copper.

qCA

= 0 V, I

is determined by the user's board design.

= -1.5 A

b) 125°C/W when mounted on a

0.026 in2 pad of 2oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

Ω

(Note 2

85 135 ns

8.1 nC

-0.65 -1.2 V

c) 135°C/W when mounted on a
minimum pad.

FDR836P, Rev. C

T ypical Characteristics

FDR836P

20

VGS = -4.5V

16

-3.0V

12

8

4

, DRAIN-SOURCE CURRENT (A)

D

-I

0

00.511.522.53

-2.5V

-

-1.5V

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

Figure 1. On-Region Characteristics.

1.6
ID = -6.1A

= -4.5V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

2

1.8

1.6
VGS = -2.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

048121620

-2.5V

-3.0V

, DIRAIN CURRENT (A)

-I

D

-3.5V

-4.0V

-4.5V

Figure 2. On-Resistance Variation

with Drain Current and Gate V oltage.

0.1

0.08

0.06

0.04

, ON-RESISTANCE (OHM)

0.02

DS(ON)

R

0

12345

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = 125oC

TA = 25oC

ID = -3 A

Figure 3. On-Resistance Variation

with Temperature.

20

VDS = -5V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

00.511.522.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

TA = 125oC

0 0.2 0.4 0.6 0.8 1 1.2

-V

SD,

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

, REVERSE DRAIN CURRENT (A)

S

-I

0.1

0.01

0.001

0.0001

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

FDR836P, Rev. C

Typical Characteristics (continued)

FDR836P

5

ID = -6.1A VDS = -5V

4

3

-15V

-10V

4000

3000

2000

C

ISS

2

CAPACITANCE (pF)

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 5 10 15 20 25 30 35 40

Q

, GATE CHARGE (nC)

g

1000

C

OSS

C

0

RSS

0 5 10 15 20 25 30

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

, DRAIN CURRENT (A)

D

-I

10

1

0.1

LIMIT

DS(ON)

VGS= -4.5V

SINGLE PULSE

= 135oC/W

R

JA

θ

o

TA = 25

C

100ms

1s

10s

DC

10ms

1ms

100µs

0.01

0.1 1 10 100

, DRAIN-SOURCE VOLTA GE ( V )

-V

DS

50

SINGLE PULSE
R

JA

40

θ

=

30

20

POWER (W)

10

0

0.0001 0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

f = 1 MHz
V

=135oC/W

o

GS

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.03

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R = 135

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cyc le, D = t / t

°C/W

JA

θ

1

JA

θ

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDR836P, Rev. C

SuperSOTTM-8 Tape and Reel Data and Package Dimensions

SSOT-8 Packaging
Configuration: Figure 1.0

Customized Label

F63TNR Label

Emboss ed Carrier Tape

Antistatic Cover Tape

Static Dissi pative

852

F

831N

Packaging Description:

SSOT-8 parts are shipped in tape. The carrier tape is
made from a di ssipative (carbon filled) po lycarbonate
resin. The cov er tap e is a mu lt ilayer film (Heat Act ivat ed
Adhesiv e in nat ure) prim aril y c omp osed of po lyes ter film ,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standar d option are ship ped wi th
3,000 u n i t s pe r 13" or 33 0c m dia m eter r e el . The re el s ar e
dark blue in color and is made of poly st yr ene plas t ic (anti­static c oated). Other option comes in 500 units per 7" or
177c m diam eter reel. This and s ome o ther opt ion s are
furth er described in the Packaging Information table.

These full reels are in di vidu al ly barcode labeled and
placed in side a standard intermediat e box (illus trated in
figur e 1.0) made of recyclable c orrugated brow n paper.
One box cont ains t wo reels maxi mum. And t hese bo xes
are placed ins ide a barc ode labeled shipp ing bo x whic h
co m e s i n di f f er e n t si z es depe nd in g on t he nu m b e r of part s
sh i ppe d.

852

852

F

831N

F

831N

852

F

831N

852

F

831N

Pin 1

SSOT-8 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

184mm x 187mm x 47mm

Stan dard

(no flow c ode )

3,000 500

13" Dia

343x64x343 184x187x47

6,000 1,000

0.0416 0.0416

0.5615 0.0980

TNR

D84Z

TNR

7" Dia

F63TNR
Label

Pizza Box for D84Z Option

SSOT-8 Tape Leader and Trailer
Configuration: Figur e 2.0

F63TNR
Label

SSOT-8 Unit Orientation

343mm x 342mm x 64mm

Inter mediate box for Standar d

and L 99Z Options

F63TNR Label sampl e

LOT: CBVK7 41B019

FSID: FDR835N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

F63TNR Label

QTY: 3000

SPEC:

N/F: F (F63TNR)3

Carrier Tape

Cover Tape

Tr ailer Tape
300mm mi n i mum or
38 empty pock ets

Components

Leader Tape
500mm mi n i mum or
62 empty pocket s

August 1999, Rev. C

SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued

SSOT-8 Embossed Carrier Tape
Configuration: Figur e 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

P1

D1

User Direction of Feed

Dimensions are in millimeter

Pkg type

SSOT-8

(12mm)

Notes: A0, B0, and K0 dimensions are determined with r espect to t he EIA/Jedec RS-481

SSOT-8 Reel Configuration: Figur e 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

4.47

5.00

12.0

1.55

1.50

1.75

10.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.10

+/-0.10

5.50

min

+/-0.05

rotationa l and lateral movement requi remen ts (see sketches A, B, and C).

20 deg maximum

Typical
component
cavity
center line

Typical
component
center line

A0

Dim A

Max

20 deg maximum component rotation

Sketc h A (Side or Front Section al View)

Component Rotation

B0

Sketc h B (Top View)

Component Rotation

W1 Measured at Hub

8.0
+/-0.1

4.0
+/-0.1

1.37

0.280
+/-0.150

9.5
+/-0.025

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketc h C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

13" Diameter Option

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

177.8

13.00
330

0.059

1.5

0.059

1.5

Dim N

See detail AA

W3

W2 max Measured at Hub

Dimensions are in inches and millimeters

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

20.2

0.795

20.2

5.906
150

7.00
178

Dim D

min

0.488 +0.078/-0.000

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

Diameter Option

7"

DETAIL AA

0.724

18.4

0.724

18.4

See detail AA

B Min

Dim C

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. C

SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued

SuperSOT-8 (FS PKG Code 34, 35)

1 : 1

Scale 1:1 on letter size paper

Dimensio ns shown below are in:

inches [mil lime ters ]

Part Weight per unit (gram): 0.0416

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™

2

CMOS

E

TM

FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D