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FDP55N06/FDPF55N06
60V N-Channel MOSFET
FDP55N06/FDPF55N06 60V N-Channel MOSFET
TM
UniFET
Features
• 55A, 60V, R
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
Symbol Parameter FDP55N06 FDPF55N06 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature
= 0.022 Ω @VGS = 10 V
DS(on)
G
D
S
Drain-Source Voltage 60 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
TO-220
FDP Series
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
- Derate above 25°C 0.9 0.4 W/°C
= 25°C)
C
= 100°C)
C
D
G
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
S
55 55 * A
34.8 34.8 * A
220 220 * A
480 mJ
55 A
11. 4 mJ
4.5 V/ns
114 48 W
300 °C
Thermal Characteristics
Symbol Parameter FDP55N06 FDPF55N06 Units
R
θJC
R
θJS
R
θJA
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
Thermal Resistance, Junction-to-Case 1.1 2.58 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDP55N06 FDP55N06 TO-220 50
FDPF55N06 FDPF55N06 TO-220F 50
FDP55N06/FDPF55N06 60V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 55A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C
DSS
Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
Static Drain-Source
VGS = 10 V, ID = 27.5 A -- 0.018 0.022 Ω
On-Resistance
Forward Transconductance VDS = 25 V, ID = 27.5 A (Note 4) -- 33 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 375 490 pF
Reverse Transfer Capacitance -- 60 90 pF
f = 1.0 MHz
Turn-O n Delay Time VDD = 30 V, ID = 55 A,
Turn-O n Ris e Ti me --
RG = 25 Ω
Turn-O ff Delay Time --
Turn-O ff Fall Time --
(Note 4, 5)
Total Gate Charge VDS = 48 V, ID = 55A,
Gate-Source Charge --
Gate-Drain Charge --
VGS = 10 V
(Note 4, 5)
-- 1160 1510 pF
--
30 65
130 265
70 150
95 195
--
30 37
6.5
7.5
Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 55 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 55 A,
Reverse Recovery Charge -- 55 -- µC
Starting TJ = 25°C
DSS,
dIF / dt = 100 A/µs (Note 4)
-- 40 -- ns
ns
ns
ns
ns
nC
-- nC
-- nC
FDP55N06/FDPF55N06 Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDP55N06/FDPF55N06 60V N-Channel MOSFET
10
10
, Drain Current [A]
D
I
10
V
Top : 15.0 V
2
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
1
0
-1
10
GS
0
10
VDS, Drain-Sour ce Voltage [ V]
2
10
150oC
* Notes :
1. 250
2. T
µs Pulse Test
= 25oC
C
10
1
1
10
25oC
, Drain Current [A]
D
I
0
10
246810
VGS, Gate-Source Voltage [V]
-55oC
* Notes :
= 30V
1. V
DS
µs Pulse Test
2. 250
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25oC
* Notes :
1. V
= 0V
GS
µs Pulse Test
2. 250
0.05
0.04
[O ],
0.03
DS(ON)
R
Drain-Source On-Resistance
0.02
VGS = 10V
0 25 50 75 100 125 150 175 200
ID, Drain Current [ A]
VGS = 20V
* Note : TJ = 25oC
2
10
1
10
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
150oC
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2500
2000
1500
1000
Capacitances [pF]
500
0
-1
10
FDP55N06/FDPF55N06 Rev. A
C
oss
C
iss
C
rss
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
* Note :
1. V
= 0 V
GS
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30
VDS = 30V
VDS = 48V
* Note : ID = 55A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
FDP55N06/FDPF55N06 60V N-Channel MOSFET
1.2
3.0
2.5
1.1
2.0
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
* Notes :
1. V
2. I
TJ, Juncti on Temperature [oC]
= 0 V
GS
= 250 µA
D
1.5
, (Normalized)
1.0
DS(ON)
R
0.5
Drain-Source On-Resistance
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
* Notes :
1. V
2. I
D
= 10 V
GS
= 27.5 A
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP55N06 for FDPF55N06
3
10
3
10
10 µs
2
10
1
10
Operation in This Area
is Limit ed by R
0
10
, Drain Current [A]
D
I
-1
10
-2
10
0
10
DS(on)
DC
1
10
100 µs
1 ms
10 ms
* Notes :
1. T
= 25 oC
C
= 150 oC
2. T
J
3. Single Pul se
2
10
, Drain Current [A]
D
I
2
10
1
10
0
10
-1
10
-2
10
Operatio n in This Area
is Li mited by R
0
10
DS(on)
VDS, Drain-Source Voltage [V]
10 ms
100 ms
DC
* Notes :
1. T
2. T
3. Single Pulse
1
10
VDS, Drai n-Source Volt age [V]
1 ms
= 25 oC
C
= 150 oC
J
100 µs
10 µs
2
10
FDP55N06/FDPF55N06 Rev. A
Figure 10. Maximum Drain Current vs. Case Temperature
60
50
40
30
20
, Drain Current [A]
D
I
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
0
10
D=0.5
0.2
0.1
-1
10
0.05
0.02
(t), Thermal Response
Z
0.01
?JC
-2
10
-5
10
single pulse
-4
10
-3
10
-2
10
* Note s :
1. Z
(t) = 1.1 oC/W Max.
?JC
2. Duty F actor, D =t
3. TJM - TC = PDM * Z
-1
10
10
1/t2
(t)
?JC
0
t1, Square W a ve Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
1
10
FDP55N06/FDPF55N06 60V N-Channel MOSFET
10
10
(t), Thermal Response
?JC
Z
10
D=0.5
0
0.2
0.1
0.05
-1
0.02
0.01
-2
-5
10
single pulse
-4
10
-3
10
* No tes :
1. Z
2. Du ty Fac tor, D =t
3. TJM - TC = PDM * Z
-2
10
(t) = 2.58 oC/W Max.
?JC
-1
10
1/t2
(t)
?JC
0
10
1
10
t1, Square W ave P ulse Duration [s ec]
FDP55N06/FDPF55N06 Rev. A
5 www.fairchildsemi.com
Page 6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDP55N06/FDPF55N06 60V N-Channel MOSFET
FDP55N06/FDPF55N06 Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
6 www.fairchildsemi.com
Page 7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP55N06/FDPF55N06 60V N-Channel MOSFET
FDP55N06/FDPF55N06 Rev. A
7 www.fairchildsemi.com
Page 8
TO-220
FDP55N06/FDPF55N06 60V N-Channel MOSFET
(1.70)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
(1.46)
(1.00)
1.27 ±0.10
9.90 ±0.20
(8.70)
ø3.60 ±0.10
(3.70)(3.00)
(45°)
1.52 ±0.10
2.80 ±0.1015.90 ±0.20
18.95MAX.
4.50 ±0.20
+0.10
1.30
–0.05
2.54TYP
[2.54
±0.20]
10.00 ±0.20
0.80 ±0.10
2.54TYP
[2.54
±0.20]
10.08 ±0.30
0.50
+0.10
–0.05
2.40 ±0.20
FDP55N06/FDPF55N06 Rev. A
8 www.fairchildsemi.com
Page 9
Mechanical Dimensions
10.16 ±0.20
TO-220F
ø3.18 ±0.10
2.54
FDP55N06/FDPF55N06 60V N-Channel MOSFET
±0.20
3.30 ±0.10
15.80 ±0.20
9.75 ±0.30
MAX1.47
0.80 ±0.10
(7.00)
(30°)
6.68 ±0.20
(1.00x45°)
(0.70)
15.87 ±0.20
0.35 ±0.10
2.54TYP
[2.54
FDP55N06/FDPF55N06 Rev. A
±0.20]
#1
9.40 ±0.20
2.54TYP
[2.54
±0.20]
+0.10
0.50
–0.05
2.76 ±0.20
4.70 ±0.20
9 www.fairchildsemi.com
Page 10
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
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