Page 1
FDP44N25 / FDPF44N25T
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
250V N-Channel MOSFET
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
March 2009
TM
UniFET
Features
• 44A, 250V, R
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 60 pF)
•Fast switching
• Improved dv/dt capability
= 0.069Ω @VGS = 10 V
DS(on)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Symbol Parameter FDP44N25 FDPF44N25T Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
*Drain current limited by maximum junction temperature
Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
44
26.4
176 176*
2055 mJ
44 A
30.7 mJ
4.5 V/ns
307
2.45
300 °C
44*
26.4*
38
0.3
A
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter FDP44N25 FDPF44N25T Unit
R
θJC
R
θCS
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP44N25 / FDPF44N25T Rev. B
Thermal Resistance, Junction-to-Case 0.41 3.3 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP44N25 FDP44N25 TO-220 - - 50
FDPF44N25T FDPF44N25T TO-220F - - 50
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25Ω, S tarting TJ = 25°C
3. ISD ≤ 44A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C
VDS = 200V, TC = 125°C
--
--
--
-Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
VGS = 10V, ID = 22A -- 0.058 0.069 Ω
Forward Transconductance VDS = 40V , ID = 22A (Note 4) -- 32 -- S
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 450 585 pF
f = 1.0MHz
-- 2210 2870 pF
Reverse Transfer Capacitance -- 60 90 pF
Turn-On Delay Time VDD = 125V, ID = 44A
Turn-On Rise Time -- 402 814 ns
Turn-Off Delay Time -- 85 179 ns
Turn-Off Fall Tim e -- 112 234 ns
RG = 25Ω
(Note 4, 5)
Total Gate Charge VDS = 200V, ID = 44A
Gate-Source Charge -- 18 -- nC
Gate-Drain Charge -- 24 -- nC
VGS = 10V
(Note 4, 5)
-- 53 117 ns
-- 47 61 nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 44A
Reverse Recovery Charge -- 1.8 -- μC
, Starting TJ = 25°C
DSS
dIF/dt =100A/μs (Note 4)
-- 195 -- ns
10
1
μA
μA
FDP44N25 / FDPF44N25T Rev. B
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
24681012
10
0
10
1
10
2
150oC
25oC
-55oC
* Notes :
1. V
DS
= 40V
2. 250
μs Pulse Test
I
D
, Drain Current [A]
VGS, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current [A ]
VDS, Drain-Source Voltage [V]
0 25 50 75 100 125 150
0.04
0.06
0.08
0.10
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
0
10
1
10
2
150oC
* Notes :
1. V
GS
= 0V
2. 250
μs Pulse Test
25oC
I
DR
, Reverse Drain Current [A]
VSD, Sourc e -Drain voltag e [V ]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
VDS = 125V
VDS = 50V
VDS = 200V
* Note : ID = 44A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP44N25 / FDPF44N25T Rev. B
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 22 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250 μA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25 oC
2. T
J
= 150 oC
3. Single Pulse
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25 oC
2. T
J
= 150 oC
3. Single Pulse
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
I
D
, Drain Current [A]
TC, Case Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP44N25 for FDPF44N25
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
Figure 10. Maximum Drain Current
vs. Case Temperature
FDP44N25 / FDPF44N25T Rev. B
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics (Continued)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
* Notes :
1. Z
θJC
(t) = 0.41 oC/W Max.
2. Duty Facto r, D=t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
θJC
(t) = 3.3 0C/W Max.
2. Duty Factor, D=t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
Figure 11-1. Transient Thermal Response Curve for FDP44N25
Figure 11-2. Transient Thermal Response Curve for FDPF44N25
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
FDP44N25 / FDPF44N25T Rev. B
5 www.fairchildsemi.com
Page 6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
FDP44N25 / FDPF44N25T Rev. B
6 www.fairchildsemi.com
Page 7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
FDP44N25 / FDPF44N25T Rev. B
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
TO-220
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
FDP44N25 / FDPF44N25T Rev. B
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
Mechanical Dimensions (Continued)
TO-220F
FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
FDP44N25 / FDPF44N25T Rev. B
Dimensions in Millimeters
9 www.fairchildsemi.com
Page 10
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FDP44N25 / FDPF44N25T 250V N-Channel MOSFET
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Definition of Terms
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplement ary data will be published at a later
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Rev. I39
10 www.fairchildsemi.com10 www.fairchildsemi.com
FDP44N25 / FDPF44N25T Rev. B
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