Datasheet FDPF3860T Datasheet (Fairchild)

tm

FDPF3860T

N-Channel PowerTrench® MOSFET

100V, 20A, 38.2mΩ

FDPF3860T N-Channel PowerTrench

March 2008

Description

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns
P

D

, T

T

J

T

L

= 38.2mΩ ( MAX ) @ VGS = 10V, ID = 5.9A

DS(on)

DS(on)

D

G

S

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 80 A

Single Pulsed Avalanche Energy (Note 2) 278 mJ
Avalanche Current (Note 1) 20 A
Repetitive Avalanche Energy (Note 1) 3.4 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220F

o

= 25

C

- Continuous (T

- Continuous (T

(T

C

- Derate above 25

C unless otherwise noted

= 25oC) 33.8 W

General Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to AC converters / Synchronous Rectification

D

G

S

= 25oC) 20

C

= 100oC) 12.7

C

o

C0.27W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. A

Thermal Resistance, Junction to Case 3.7
Thermal Resistance, Junction to Ambient 62.5

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDPF3860T FDPF3860T TO-220F - - 50

FDPF3860T N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC-0.1-V/

D

V

= 80V, V

DS

= 48V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.5-4.5V
Static Drain to Source On Resistance VGS = 10V, ID = 5.9A - 29.1 38.2 mΩ
Forward Transconductance VDS = 10V , ID = 5.9A (Note 4) -21-S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance - 145 190 pF
Reverse Transfer Capacitance - 60 90 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g(tot)
gs

gd

Turn-On Delay Time
Turn-On Rise Time - 17 45 ns
Turn-Off Delay Time - 24 60 ns
Turn-Off Fall Time - 7 25 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 7 - nC

Gate to Drain “Miller” Charge - 8 - nC

= 25V, VGS = 0V

V

DS

f = 1MHz

= 50V, ID = 5.9A

V

DD

V

= 10V, R

GS

(Note 4, 5)

V

= 80V, ID = 5.9A

DS

V

= 10V

GS

(Note 4, 5)

GEN

= 6Ω

- 1350 1800 pF

-1540ns

-2335nC

µA

o

C

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L =16mH, IAS = 5.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 5.9A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDPF3860T Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 20 A
Maximum Pulsed Drain to Source Diode Forward Current - - 80 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 56 - nC

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 5.9A - - 1.3 V

SD

= 5.9A

SD

2

-40-ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

200

V

= 15.0 V

GS

10.0 V

100

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

,Drain Current[A]

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

1

0.1 1 10

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.14

0.12

200

100

150oC

-55oC

10

,Drain Current[A]

D

I

1

45678

25oC

*Notes:

1. V

= 20V

DS

2. 250µs Pulse Test

VGS,Gate-Source Voltage[V]

200

100

FDPF3860T N-Channel PowerTrench

®

MOSFET

0.10

[Ω],

0.08

DS(ON)

R

0.06

0.04

Drain-Source On-Resistance

0.02
0 25 50 75 100

VGS = 10V

*Note: TJ = 25oC

ID, Drain Current [A]

VGS = 20V

10

, Reverse Drain Current [A]

S

I

1

0.00.40.81.2

VSD, Body D io de Forward Vo lta g e [V]

150oC

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

C

oss

iss

C

= C

rss

gd

1500

1000

Capacitances [pF]

500

0

0.1 1 10

C

oss

C

rss

VDS, Drain-Source Voltage [V ]

gd

*Note:

1. V

2. f = 1MHz

= 0V

GS

30

10

VDS = 80V
V

= 50V

DS

V

8

DS

= 25V

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 5.9A

0

0 5 10 15 20 25

Qg, Total Gate Charge [nC]

1.4

FDPF3860T Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDPF3860T N-Channel PowerTrench

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 0V

GS

= 250µA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

GS

= 5.9A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

200

100

10

Operation in This Area

1

is Limited by R

, Drain Current [A]

D

I

0.1

0.01

0.1 1 10 100

DS(on)

*Notes:

= 25oC

1. T

C

2. T

= 150oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

100µs

1ms

10ms

DC

10µs

200

25

20

15

10

, Drain Current [A]

D

I

5

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

5

®

MOSFET

FDPF3860T Rev. A

]

Thermal Response [Z

θJC

0.1

0.01

0.5

1

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

10

P

DM

t

1

t

*Notes:

1. Z

2. Duty Fact o r , D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

0

10

2

(t) = 3.7oC/W Max.

θJC

1

10

1/t2

θJC

2

10

(t)

3

10

Rectangular Pulse Duration [sec]

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDPF3860T N-Channel PowerTrench

®

MOSFET

FDPF3860T Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

DUT

I

I

SD

SD

Driver

Driver

R

R

G

G

V

V

GS

GS

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DUT

as DUT

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

FDPF3860T N-Channel PowerTrench

®

V

V

DD

DD

MOSFET

V

V

GS

GS

( Driver )

( Driver )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

Gate Pulse Width

Gate Pulse Width

Gate Pulse Width

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forward Current

IFM, Body Diode Forward Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

Body Diode Recoverydv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Voltage Drop

Forward Voltage Drop

di/dt

di/dt

10V

10V

V

V

DD

DD

FDPF3860T Rev. A

6

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Package Dimensions

0

2.54

0

FDPF3860T N-Channel PowerTrench

TO-220F

10.16 ±0.20
(7.00)

ø3.18 ±0.10

±0.20

(0.70)

3.30 ±0.1

6.68 ±0.20

(1.00x45°)

15.80 ±0.20

15.87 ±0.20

®

MOSFET

MAX1.47

0.80 ±0.10

9.75 ±0.30

(30°)

FDPF3860T Rev. A

0.35 ±0.10

2.54TYP

±0.20]

[2.54

#1

9.40 ±0.20

2.54TYP

±0.20]

[2.54

4.70 ±0.20

+0.10

0.50

–0.05

7

2.76 ±0.2

Dimensions in Millimeters

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical im plant into the body or
(b) support or sustain lif e, and (c) whose failure to perform
when properly used in accordance with instructi ons for use

2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the fail ure of the life support
device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to
result in a signific ant injury of the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Des i gn

This datasheet contains the design specificati ons for product development.
Specifications may change in any manner without notic e.

This datasheet contains prelim inary data; supplementary data will be published

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

at a later date. Fairchild S emiconductor reserves the right to make changes at
any time without notice t o i mprove design.

This datasheet contains f i nal specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notic e to improve the design.

This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconduc tor. The datasheet is for referenc e i nformation only.

Rev. I34

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com