Datasheet FDPF320N06L Datasheet (Fairchild)

FDPF320N06L

G

S

D

TO-220F

(Retractable)

G

E

C

N-Channel PowerTrench® MOSFET

60V, 21A, 25mΩ

FDPF320N06L N-Channel PowerTrench

December 2010

Features

•R

•R

• Low Gate Charge ( Typ. 23.2nC)

•Low C

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

•RoHS Compliant

= 20mΩ ( Typ.)@ VGS = 10V, ID = 21A

DS(on)

= 23mΩ ( Typ.)@ VGS = 5V, ID = 17A

DS(on)

( Typ. 64pF)

rss

Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC converters / Synchronous Rectification

MOSFET Maximum Ratings T

Symbol Parameter FDPF320N06L Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 84 A

Single Pulsed Avalanche Energy (Note 2) 66 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

- Continuous (T

- Continuous (T

(T

= 25oC) 26 W

C

- Derate above 25

= 25oC) 21

C

= 100oC) 15

C

o

C0.17W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2010 Fairchild Semiconductor Corporation
FDPF320N06L Rev. A4

Thermal Resistance, Junction to Case 5.8
Thermal Resistance, Junction to Ambient 62.5

FDPF320N06L

www.fairchildsemi.com1

Units

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDPF320N06L FDPF320N06L TO-220F - - 50

FDPF320N06L N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 60 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.04 - V/oC

D

V

= 48V, V

DS

= 48V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 μA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA1.0-2.5V

V

= 10V, ID = 21A - 20 25 mΩ

Static Drain to Source On Resistance
Forward Transconductance

GS

= 5V, ID = 17A - 23 38 mΩ

V

GS

= 10V , ID = 21A (Note 4)

V

DS

-34-S

Dynamic Characteristics

C
C
C
Q
Q
Q
Q

iss
oss
rss

g(tot)
g(tot)
gs
gd

Input Capacitance
Output Capacitance - 115 150 pF
Reverse Transfer Capacitance - 64 - pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 10V
Total Gate Charge at 5V VGS = 5V - 12.7 16.5 nC
Gate to Source Gate Charge - 3.4 - nC

V
I

D

= 48V

DS

= 21A

Gate to Drain “Miller” Charge - 6.3 - nC

- 1105 1470 pF

- 23.2 30.2 nC

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 34 78 ns
Turn-Off Delay Time - 27 64 ns
Turn-Off Fall Time - 8 26 ns

-1642ns

= 30V, ID = 21A

V

DD

V

= 5V, R

GS

(Note 4, 5)

GEN

= 4.7Ω

ESR Equivalent Series Resistance (G-S) - 2 - Ω

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I
≤ 21A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 21 A
Maximum Pulsed Drain to Source Diode Forward Current - - 84 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 23 - nC

= 11.5A, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 21A - - 1.3 V

SD

= 21A, VDD = 48V

SD

-27-ns

FDPF320N06L Rev. A4

2

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Typical Performance Characteristics

0.1 1 4

2

10

100

200

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

5.0V

4.0V

3.5V

3.0V

12345

1

10

100

-55oC

175oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.0 0.5 1.0 1.5

1

10

100

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 20406080100

0.01

0.02

0.03

0.04

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 60

40

100

1000

4000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 4 8 12162024

0

2

4

6

8

10

*Note: ID = 21A

VDS = 12V
V

DS

= 30V

V

DS

= 48V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [nC ]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDPF320N06L N-Channel PowerTrench

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

®

MOSFET

FDPF320N06L Rev. A4

3

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Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

*Notes:

1. V

GS

= 0V

2. I

D

= 250μA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. V

GS

= 10V

2. I

D

= 21A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

0.1 1 10 100

0.01

0.1

1

10

100

300

100ms

100μs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. T

C

= 25oC

2. T

J

= 175oC

3. Single Pulse

DC

25 50 75 100 125 150 175

0

6

12

18

24

V

GS

= 5 V

R

θJC

= 5.8 oC/W

V

GS

= 10 V

I

D

, Drain Current [A]

T

C

, Case Temperature [

o

C]

10

-5

10

-4

10

-3

10

-2

10

-1

110

100

0.01

0.1

1

8

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 5.8oC/W Max.

2. Dut y Facto r , D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

FDPF320N06L N-Channel PowerTrench

®

MOSFET

Figure 11. Transient Thermal Response Curve

FDPF320N06L Rev. A4

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDPF320N06L N-Channel PowerTrench

®

MOSFET

FDPF320N06L Rev. A4

5

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DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDPF320N06L N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

®

MOSFET

FDPF320N06L Rev. A4

6

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Package Dimensions

FDPF320N06L N-Channel PowerTrench

TO-220F

®

MOSFET

FDPF320N06L Rev. A4

* Front/Back Side Isolation Voltage : AC 2500V

Dimensions in Millimeters

7

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®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDPF320N06L Rev. A4

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only .

Rev. I51

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