Datasheet FDPF2710T Datasheet (Fairchild)

FDPF2710T

250V N-Channel PowerTrench MOSFET

FDPF2710T 250V N-Channel PowerTrench MOSFET

September 2007

General Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Description

• 25A, 250V, R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

= 36.3mΩ @VGS = 10 V

DS(on)

Application

• Ballast Application

D

G

D

G

S

TO-220F

S

Absolute Maximum Ratings

Symbol Parameter Ratings Unit

V

DS

V

GS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 250 V
Gate-Source voltage ± 30 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed
Single Pulsed Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)
(Note 3) 4.5 V/ns

25

18.8
100

145 mJ

62.5

0.5

300 °C

DS(on)

A
A

A

W

W/°C

Thermal Characteristics

Symbol Parameter Min Max Unit

R

θJC

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDPF2710T Rev. A

Thermal Resistance, Junction-to-Case -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDPF2710T FDPF2710T TO-220F -- -- 50

FDPF2710T 250V N-Channel PowerTrench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.25--V/°C

D

= 250V, VGS = 0V,TC = 125°C

V

DS

--

--

--

-­Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 3.9 5.0 V
Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ
Forward Transconductance VDS = 10V, ID = 25A

Input Capacitance

= 25V, VGS = 0V,

V

Output Capacitance -- 426 567 pF
Reverse Transfer Capacitance -- 97 146 pF

DS

f = 1.0MHz

Turn-On Delay Time VDD = 125V, ID = 50A

V

= 10V, R

Turn-On Rise Time -- 252 514 ns

GS

GEN

= 25Ω

(Note 4)

-- 63 -- S

-- 5470 7280 pF

-- 80 170 ns

Turn-Off Delay Time -- 112 234 ns
Turn-Off Fall Time -- 154 318 ns
Total Gate Charge VDS = 125V, ID = 50A

= 10V

V

Gate-Source Charge -- 34 -- nC

GS

Gate-Drain Charge -- 18 -- nC

(Note 4, 5)

-- 78 101 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 25A -- -- 1 . 2 V
Reverse Recovery Time VGS = 0V, IS = 50A

dI

/dt =130A/µs (Note 4)

Reverse Recovery Charge -- 1.3 -- µC

F

-- 163 -- ns

10

500µAµA

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I

3. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

= 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

FDPF2710T Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500

100

V

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

GS

10

,Drain Current[A]

D

I

* Notes :

1. 250

µs Pulse Test

2. T

= 25oC

1

0.1 1 10

VDS,Drain-Source Voltage[V]

C

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

0.07

0.06

250

100

150oC

10

,Drain Current[A]

D

I

1

46810

25oC

-55oC

* Notes :

1. V

DS

2. 250

= 20V

µs Pulse Test

VGS,Gate-Source Voltage[V]

150

* Notes :

100

1. V

=0V

GS

2. 250

µs Pulse Test

FDPF2710T 250V N-Channel PowerTrench MOSFET

0.05

[Ω],

0.04

DS(ON)

R

VGS = 10V

VGS = 20V

0.03

Drain-Source On-Resistance

0.02
0 255075100125150

* Note : TJ = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

TA = 150oC

1

0.20.40.60.81.01.2

TA = 25oC

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

9000

6000

3000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

gd

0

-1

10

VDS, Drain-Source Voltage [V]

gd

C

iss

C

oss

* Note:

1. V

= 0V

C

rss

0

10

GS

2. f = 1MHz

1

10

30

10

VDS = 50V

V

= 125V

8

V

DS

DS

= 200V

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 1020304050607080

* Note : ID = 50A

Qg, Total Gate Charge [nC]

FDPF2710T Rev. A

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.2

2.5

FDPF2710T 250V N-Channel PowerTrench MOSFET

1.1

2

1.0

, [Normalized]

DSS

BV

0.9

* Notes :

Drain-Source Breakdown Voltage

1. V

2. I

0.8

-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]

= 0V

GS

= 250µA

D

, [Normalized]

1

DS(on)

r

Drain-Source On-Resistance

0

-100 -50 0 50 100 150 200

* Notes :

1. V

2. I

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

100

10

[A]

D

Operation in This Area

1

is Limited by R

Drain Current, I

0.1

0.01

* Notes :

= 25oC

1. T

C

= 150oC

2. T

J

3. Single Pulse

110100

Drain-Source Voltage, VDS [V]

DS(on)

30

100µs

1ms

10 ms

DC

400

20

10

, Drain Current [A]

D

I

0

25 50 75 100 125 150

T

, Case Temperature [oC]

C

GS

= 25A

D

= 10V

Figure 11. Transient Thermal Response Curve

0

10

]

0.5

θJC

FDPF2710T Rev. A

0.2

0.1

-1

10

0.05

0.02

0.01

-2

10

Thermal Response [Z

Single pulse

-3

10

-5

10

-4

10

-3

10

-2

10

10

Rectangular Pulse Duration [sec]

4 www.fairchildsemi.com

P

DM

* Notes :

1. Z

θJC

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

-1

10

t

1

(t) = 2.0oC/W Max.

0

t

2

1/t2

(t)

θJC

1

10

2

10

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDPF2710T 250V N-Channel PowerTrench MOSFET

FDPF2710T Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDPF2710T 250V N-Channel PowerTrench MOSFET

FDPF2710T Rev. A

6 www.fairchildsemi.com

Package Dimensions

FDPF2710T 250V N-Channel PowerTrench MOSFET

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

FDPF2710T Rev. A

Dimensions in Millimeters

7

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FDPF2710T 250V N-Channel PowerTrench MOSFET

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As used herein:

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild Semiconductor. The datasheet is printed for reference infor­mation only.

Rev. I31

FDPF2710T Rev. A

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