Datasheet FDPC8013S Datasheet (Fairchild)

FDPC8013S

PowerTrench 30 V Asymmetric Dual N-Channel MOSFET

Features

Q1: N-Channel  Max r

Q2: N-Channel

 Max r  Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

 MOSFET integration enables optimum layout for lower circuit

inductance and reduced switch node ringing

 RoHS Compliant

= 9.6 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 2.7 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

®

Power Clip

General Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous

TM

SyncFET

(Q2) have been designed to provide optimal power

efficiency.

Applications

 Computing  Communications  General Purpose Point of Load

April 2012

FDPC8013S PowerTrench

®

Power Clip

Pin 1

GND

Top

3.3 mm x 3.3 mm

MOSFET Maximum Ratings T

GND

LS

V+

(HSD

GND (LSS

SW

Bottom

= 25 °C unless otherwise noted

A

SW

Pin 1

HSG

SW

PAD9 V+(HSD)

PAD10 GND(LSS)

V+

LSG

GND

HSG

SW

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 4) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 20 55

I

D

= 25 °C 13

A

1a

26

1b

-Pulsed 40 100

E

AS

P

D

TJ, T

STG

Single Pulse Avalanche Energy (Note 3) 21 97 mJ Power Dissipation for Single Operation TA = 25 °C 1.6 Power Dissipation for Single Operation T

= 25 °C 0.8

A

1a

1c

2.0

0.9

1b

1d

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 77 Thermal Resistance, Junction to Ambient 151 Thermal Resistance, Junction to Case 5.0 3.5

1a

1c

63

135

1b

1d

Package Marking and Ordering Information

V+

LSG

GND

A -Continuous T

W

°C/WR

Device Marking Device Package Reel Size Tape Width Quantity

13CF/15CF FDPC8013S Power Clip 33 13 ” 12 mm 3000 units

1

www.fairchildsemi.com

FDPC8013S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current,

Forward

= 250 μA, VGS = 0 V

D

I

= 1 mA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

V

DS

V

DS

= 24 V, V = 24 V, V

GS GS

= 0 V = 0 V

VGS = 20 V, VDS= 0 V V

= 20 V, VDS= 0 V

GS

Q1Q230

30

Q1 Q2

V

16 20

500 100

100

mV/°C

1

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = 1 mA

GS

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

V

= 10 V, ID = 13 A

GS

V

= 4.5 V, ID = 10 A

GS

V

= 10 V, ID = 13 A,TJ =125 °C

GS

V

= 10 V, ID = 26 A

GS

V

= 4.5 V, ID = 22 A

GS

V

= 10 V, ID = 26 A ,TJ =125 °C

GS

V

= 5 V, ID = 13 A

DS

V

= 5 V, ID = 26 A

DS

Q1Q21.2

1.2

Q1 Q2

Q1

Q2

Q1 Q2

1.5

1.7

-5

-6

4.6

6.7

6.6

1.4

2.0

1.9 53

168

3.0

3.0 mV/°C

6.4

9.6

9.2

1.9

2.7

2.6

μA μA

nA nA

V

mΩ

S

®

Power Clip

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

827

2785

333 997

44

128

0.5

pF

Ω

6

11

2 5

16 30

2 4

13 44

6

21

2.2

7.2

1.9

6.6

ns

nC

Q1:

= 15 V, ID = 13 A, R

V

DD

Q2: V

= 15 V, ID = 26 A, R

DD

= 0 V to 10 V

GS

= 0 V to 4.5 V

GS

= 6 Ω

GEN

= 6 Ω

GEN

Q1 V

= 15 V,

DD

I

= 13 A

D

Q2 VDD = 15 V, I

= 26 A

D

Q1 Q2

2

www.fairchildsemi.com

FDPC8013S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

= 0 V, IS = 13 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1.R

is determined with the device mo un ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 material. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

a. 77 °C/W when mounted on a 1 in2 pad of 2 oz copper

SS

SF

DS

DF

G

GS

V

= 0 V, IS = 26 A (Note 2)Q1Q2

GS

Q1

= 13 A, di/dt = 100 A/μs

I

F

Q2 I

= 26 A, di/dt = 300 A/μs

F

G

DF

DS

SF

Q1 Q2

is guaranteed by design while R

θJC

b. 63 °C/W when mounted on a 1 in

SS

0.80

0.77

2

pad of 2 oz copper

22 29

30

1.2

7

is determined by

θCA

ns

nC

V

®

Power Clip

c. 151 °C/W when mounted on a minimum pad of 2 oz copper

SS

SF

DS

DF

SS

SF

DS

DF

G

2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

of 21 mJ is based on starting TJ = 25 oC; N-ch: L = 1.2 mH, IAS = 6 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 14.5 A.

3. Q1 :E

AS

Q2: EAS of 97 mJ is based on starting TJ = 25 oC; N-ch: L = 0.6 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 32.9 A.

4. As an N-ch device, the negat i ve V

rating is for low duty cycle pulse occurence only. No continuous rating is implied.

gs

G

d. 135 °C/W when mounted on a minimum pad of 2 oz copper

3

www.fairchildsemi.com

FDPC8013S PowerTrench

0.0 0.3 0.6 0.9 1.2 1.5

0

10

20

30

40

V

GS

= 3 V

V

GS

= 3.5 V

V

GS

= 10 V

V

GS

= 6 V

V

GS

= 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 3 V

VGS = 6 V

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 13 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPER ATURE (

o

C)

2345678910

0

7

14

21

28

35

TJ = 125 oC

ID = 13 A

TJ = 25 oC

V

GS

, GATE TO SO U RCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R e s i stance

vs Drain Current and Gate Voltage

®

Power Clip

Fig u r e 3. Nor m a lized On R esistan c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

4

www.fairchildsemi.com

FDPC8013S PowerTrench

03691215

0

2

4

6

8

10

ID = 13 A

V

DD

= 15 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 20 V

0.1 1 10 30

10

100

1000

2000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.001 0.01 0.1 1 10 50

1

10

50

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

10

20

30

40

50

60

R

θJC

= 5.0 oC/W

V

GS

= 4.5 V

Limited by Package

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

100 μs

DC

100 ms

10 ms

1 ms

1s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AR E A IS

LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 151

o

C/W

T

A

= 25

o

C

10s

10-410-310-210-110010

1

100 1000

0.5

1

10

100

1000

SINGLE PULSE R

θJA

= 151 oC/W

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics (Q1 N-Channel) T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capa c i t a nce v s D r ain

to Source Voltage

®

Power Clip

Figure 9.

Unclamped Inductive

Switching Capability

Figure 11.

Forward Bias Safe

Operating Area

Figure 10. Maximum Continuous Drain

Current vs. Ambient Temperature

Figure 12.

Single Pu l s e M a x imum

Power Dissipation

5

www.fairchildsemi.com

FDPC8013S PowerTrench

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE R

θJA

= 151 oC/W

(Note 1b)

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics (Q1 N-Channel) T

Figure 13.

Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

Power Clip

6

www.fairchildsemi.com

FDPC8013S PowerTrench

0.0 0.2 0.4 0.6 0.8 1.0

0

20

40

60

80

100

V

GS

= 3 V

V

GS

= 3.5 V

V

GS

= 10 V

V

GS

= 6 V

V

GS

= 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

020406080100

0

1

2

3

4

5

6

VGS = 3 V

VGS = 4.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 3.5 V

VGS = 6 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 26 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE M P E R ATURE (

o

C)

246810

0

1

2

3

4

5

6

7

TJ = 125 oC

ID = 26 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.01.52.02.53.03.5

0

20

40

60

80

100

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q2 N-Channel) T

Figure 14. On-Region Characteristics

= 25 oC unlenss otherwise noted

J

Figure 15. Normalized on-Resistance vs Drain

Current and Gate Voltage

®

Power Clip

Figure 16. Normalized On-Resistance

vs Junction Temperature

Figure 18. Transfer Characteristics

Figure 17. On-Resistance vs Gate to

Source Voltage

Figure 19. Source to Drain Diode

Forward Voltage vs Source Current

7

www.fairchildsemi.com

0 1020304050

0

2

4

6

8

10

ID = 26 A

V

DD

= 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10 30

50

100

1000

10000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.001 0.01 0.1 1 10 100 1000

1

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

20

40

60

80

100

120

R

θJC

= 3.5 oC/W

V

GS

= 4.5 V

Limited by Package

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

200

100 μs

DC

100 ms

10 ms

1 ms

1s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 135

o

C/W

T

A

= 25

o

C

10s

10-410-310-210-110010

1

100 1000

0.5

1

10

100

1000

3000

SINGLE PULSE R

θJA

= 135 oC/W

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

FDPC8013S PowerTrench

Typical Characteristics (Q2 N-Channel) T

Figure 20. Gate Charge Characteristics

= 25 oC unlenss otherwise noted

J

Figure 21. Capacitance vs Drain

to Source Voltage

®

Power Clip

Figure 22. Unclamped Inductive

itching Capability

Sw

Figure 24. Forward Bias Safe

Operating Area

Figure 23. Maximum Continouns Drain

Current vs Ambient Temperature

Figure 25. Single Pulse Maximum

Power Dissipation

8

www.fairchildsemi.com

FDPC8013S PowerTrench

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100 1000

1E-4

1E-3

0.01

0.1

1

2

SINGLE PULSE R

θJA

= 135 oC/W

(Note 1b)

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics (Q2 N-Channel) T

= 25 oC unlenss otherwise noted

J

Figure 26. Junction-to-Ambient Transient Thermal Response Curve

®

Power Clip

9

www.fairchildsemi.com

100 150 200 250 300 350 400

-5

0

5

10

15

20

25

30

CURRENT (A)

TIME (ns)

di/dt = 300 A/μs

0 5 10 15 20 25 30

1

10

2

10

3

10

4

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (uA)

VDS, REVERSE VOLTAGE (V)

Typical Characteristics (continued)

SyncFETTM Schottky body diode Characteristics

FDPC8013S PowerTrench

Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDPC8013S.

Figure 27. FDPC8013S SyncFET

TM

body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

Figure 28. SyncFET

TM

body diode reverse

leakage versus drain-source voltage

®

Power Clip

10

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDPC8013S PowerTrench

®

Power Clip

11

www.fairchildsemi.com

TRADEMARKS

®

™

tm

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/ or its global subsidiaries, and is n ot intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

®

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

®

ESBC™

®

Fairchild Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST FastvCore™ FETBench™ FlashWriter

®

*

FPS™

®

F-PFS™

®

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

®

SM

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™

®

XS™

®

*

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDPC8013S PowerTrench

®

Power Clip

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the bo dy or (b ) support or su stain life, and (c) whose failure to perform when properly used in accordan ce with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are exper iencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit part s expe rience many problems such as loss of brand repu tation, substa ndar d pe rformance, fail ed application, and increased cost of production and manufacturing delays. Fairchild is taki ng st ron g measures to prote ct ourselves and our custo mers from the proliferation of counterfeit parts. Fairchild strongl y encourages customers t o purchase Fairchil d parts either d irectly from Fairchild o r from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61

12

www.fairchildsemi.com

Datasheet FDPC8013S Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual