Datasheet FDP61N20 Datasheet (Fairchild)

FDP61N20

D

200V N-Channel MOSFE T

FDP61N20 200V N-Channel MOSF ET

September 2005

TM

UniFET

Features

• 61A, 200V, R

• Low gate charge ( typical 58 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 80 pF)

rss

= 0.041Ω @VGS = 10 V

DS(on)

G

D

S

TO-220

FCP Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

{

z





z

{

G

z z

z

{

S

Absolute Maximum Ratings

Symbol Parameter FDP61N20 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

J, TSTG

T

L

Drain-Source Voltage 200 V Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 61 A Repetitive Avalanche Energy (Note 1) 41.7 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

61

38.5 244 A

1440 mJ

417

3.3

300 °C

A A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θJA

FDP61N20 Rev. A

Thermal Resistance, Junction-to-Case -- 0.3 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP61N20 FDP61N20 TO-220 - - 50

FDP61N20 200V N-Channel MOSF ET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.2--V/°C

D

V

= 160V, TC = 125°C

DS

--

1

10

µA µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V Static Drain-Source

On-Resistance Forward Transconductance VDS = 40V, ID =30.5A

Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance -- 645 840 pF

= 10V, ID = 30.5A -- 0.034 0.041 Ω

V

GS

(Note 4)

-- 44.5 -- S

-- 2615 3380 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 80 120 pF

Turn-On Delay Time VDD = 100V, ID = 61A

= 25Ω

R

Turn-On Rise Time -- 215 440 ns

G

-- 40 90 ns

Turn-Off Delay Time -- 125 260 ns Turn-Off Fall Time -- 1 7 0 350 ns Total Gate Charge VDS = 160V, ID = 61A

= 10V

V

Gate-Source Charge -- 19 -- nC

GS

Gate-Drain Charge -- 24 -- nC

(Note 4, 5)

-- 58 75 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 61 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 244 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 61A -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS = 61A

/dt =100A/µs (Note 4)

dI

Reverse Recovery Charge -- 1.5 -- µC

F

-- 162 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.58mH, IAS = 61A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 61A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDP61N20 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V Top : 1 5.0 V

2

10.0 V

10

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

GS

2

10

FDP61N20 200V N-Channel MOSF ET

1

10

, Drain Current [A]

D

I

? Notes :

1. 250 Pulse Test

탎

0

10

-1

10

0

10

2. TC = 25?

1

10

VDS, Drain-Source Voltage [V]

1

10

, Drain Current [A]

D

I

10

150oC

25oC

-55oC

0

24681012

? Notes :

1. V

= 40V

DS

탎

2. 250 Pulse Test

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.06

0.05

0.04

0.03

[O ], Drain-Source O n-Resist ance

DS(ON)

R

0.02 0 255075100125150

VGS = 10V

VGS = 20V

? Note : TJ = 25

ID, Drain C u r rent [A]

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

150?

25?

VSD, Source-Drain voltage [V]

? Notes :

= 0V

1. V

GS

2. 250 Pulse Test

탎

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

4000

2000

Capacitances [pF]

0

-1

10

FDP61N20 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Sourc e Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

? Note ;

1. V

2. f = 1 MH z

1

10

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060

VDS = 40V VDS = 100V VDS = 160V

? Note : ID = 61A

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

Typical Perfor mance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

3.0

FDP61N20 200V N-Channel MOSF ET

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

Notes :

※

1. VGS = 0 V

2. I

TJ, Junction Temperature [oC]

= 250 µ A

D

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

? Notes :

1. V

GS

2. I

= 30.5 A

D

= 10 V

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

, Drain Current [A]

D

I

3

10

2

10

1

10

Operation in This Area is Limited by R

0

-1

-2 0

10

1 ms

10 ms

100 ms

DC

DS(on)

? Notes :

1. T

2. T

3. Single Pulse

1

10

VDS, Drain-Source Voltage [V]

100 µs

= 25 oC

C

= 150 oC

J

10

70

10 µs

2

60

50

40

30

, Drain Current [A]

20

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature [? ]

Figure 11. Transient Thermal Response Curve

D=0.5

-1

10

0.2

0.1

0.05

-2

0.02

10

(t), Thermal Response Z

FDP61N20 Rev. A

0.01

?JC

sin g le p u ls e

-5

10

-4

10

t1, Square W ave Pulse Duration [sec]

P

DM

t

1

t

? Notes :

1. Z

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

-3

10

-2

10

2

(t) = 0.3 ? /W Max .

?JC

-1

1/t2

(t)

?JC

0

10

1

10

4 www.fairchildsemi.com

12V

200nF

3mA

50K

FDP61N20 200V N-Channel MOSF ET

Gate Charge Test Circuit & Waveform

V

GS

DS

GS

10V

Q

g

Q

gs

Q

gd

Charge

Same Type

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

E

AS

2

AS

(t)

I

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FDP61N20 Rev. A

5 www.fairchildsemi.co m

Peak Diode Recovery dv /dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse period

G

FDP61N20 200V N-Channel MOSF ET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FDP61N20 Rev. A

6 www.fairchildsemi.co m

Mechanical Dimensions

FDP61N20 200V N-Channel MOSF ET

TO-220

FDP61N20 Rev. A

Dimensions in Millimeters

7 www.fairchildsemi.com

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Advance Information

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No Identification Needed

Formative or In Design

First Production

Full Production

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effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

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Rev. I16