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FDP8876
N-Channel PowerTrench® MOSFET
30V, 71A, 8.5mΩ
FDP8876 N-Channel PowerTrench
November 2005
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(ON)
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Pulsed Figure 4 A
Single Pulse Avalanche Energy (Note 1) 180 mJ
Power dissipation 70 W
Operating and Storage Temperature -55 to 175
= 25oC, VGS = 10V)
C
= 25oC, VGS = 4.5V) 64 A
C
A
SOURCE
DRAIN
GATE
= 25°C unless otherwise noted
Features
r
r
High performance trench technology for extremely low
Low gate charge
High power and current handling capability
RoHS Compliant
DS(ON)
DS(ON)
r
DS(ON)
= 8.5mΩ, V
= 10.3mΩ, V
= 10V, ID = 40A
GS
= 4.5V, ID = 40A
GS
G
D
S
70 A
®
MOSFET
o
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case TO-263 2.14
Thermal Resistance Junction to Ambient TO-263,1in2copper pad area 62
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8876 FDP8876 TO-220AB Tube N/A 50 units
©2005 Fairchild Semiconductor Corporation
FDP8876 Rev. A
o
C/W
o
C/W
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FDP8876 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
I
DSS
I
GSS
VDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
Zero Gate Voltage Drain Current
VDS = 24V 1 µA
VGS = 0V TA = 150oC - - 250
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V
ID = 40A, VGS = 10V - 6.1 8.7
Drain to Source On Resistance
ID = 40A, VGS = 4.5V - 7.7 10.5
ID = 40, VGS = 10V,
TA = 175oC
- 11 14
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 340 - pF
Reverse Transfer Capacitance - 210 - pF
VDS = 15V, VGS = 0V,
f = 1MHz
- 1700 - pF
Gate Resistance VGS=0.5V, f = 1MHz - 2.3 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 17 24 nC
Threshold Gate Charge VGS = 0V to 1V - 1.6 2.4 nC
VDD = 15V
ID = 40A
Ig = 1.0mA
- 32 45 nC
Gate to Sourse Gate Charge - 4.7 - nC
Gate Charge Threshold to Plateau - 3.1 - nC
Gate to Drain “Miller” Charge - 7.0 - nC
mΩ
®
MOSFET
Switching Characteristics (V
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 9 - ns
Rise Time - 97 - ns
Turn-Off Delay Time - 51 - ns
Fall Time - 39 - ns
Turn-Off Time - - 135 ns
GS
= 10V)
Drain-Source Diode Characteristic
V
SD
t
rr
Q
RR
Notes:
1: Starting TJ=25OC,L=1mH,IAS=19A,VDD=27V,VGS=10V
2: Pulse width=100s
Source to Drain Diode Voltage
Reverse Recovery Time ISD = 40A, dISD/dt=100A/µs - - 22 ns
Reverse Recovered Charge ISD = 40A, dISD/dt=100A/µs - - 9 nC
- - 189 ns
VDD = 15V, ID = 40A
VGS = 10V, RGS = 10Ω
I
= 40A - - 1.25 V
SD
ISD = 3.2A - - 1.0 V
FDP8876 Rev. A
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FDP8876 N-Channel PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
A
100
VGS=10V
80
60
VGS=4.5V
VGS=3.5V
40
,DRAIN DURRENT(A)
D
I
20
PULSE DURATION=80µS
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS,DRAIN TO SOURSE VOLTAGE(V)
DUTY CYCLE=0.5 %MAX
Figure 1. On Region Characteristics
1.6
ID = 40A
VGS = 10V
1.4
1.2
, NORMALIZED
1.0
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-80 -40 0 40 80 120 160 200
PULSE DURATION=80µ S
DUTY CYCLE=0.5%MAX
TJ, JUNCTION TEMPERATURE (oC)
VGS=3V
TC=25oC
2.6
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.2
2.0
1.8
1.6
, NORMALIZED
1.4
1.2
DS(ON)
R
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
10 20 30 40 50 60 70 80
ID,DRAIN CURRENT
Figure 2.
On-Resistance Variation with Drain
Current and Gate Voltage
, ON-RESISTANCE (OHM)
R
DS(ON)
0.016
0.014
0.012
0.010
0.008
0.006
PULSE DURATION=80µS
DUTY CYCLE=0.5%MAX
TA = 125oC
TA = 25oC
345678910
VGS, GATE TO SOURCE VOLTAGE (V)
3v
3.5v
4v
4.5v
5v
10v
®
MOSFET
ID=40A
Figure 3.
160
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V
120
80
, DRAIN CURRENT (A)
D
40
I
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
Figure 5. Transfer Characteristics
FDP8876 Rev. A
On Resistance Variation with
Temperature
= 15V
DD
TJ = 175oC
TJ = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55oC
Figure 4.
On-Resistance Variation with
Gate-to-Source Votlage
100
VGS=0V
10
125oC
1
25oC
0.1
, REVERSE DRAIN CURRENT (A)
S
I
0.01
0.00.20.40.60.81.01.21.4
Figure 6.
VSD, BODY DIODE FORWARD VOLTAGE (V)
Body Diode Forward Voltage Variation
-25oC
With Source Current and Temperature
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Typical Characteristics T
= 25°C unless otherwise noted
A
FDP8876 N-Channel PowerTrench
10
VDD=15V
8
6
4
,GATE TO SOURCE VOLTAGE(V)
2
GS
V
0
0 5 10 15 20 25 30 35
Figure 7.
100
10
STARTING TJ = 150oC
, AVALANCHE CURRENT (A)
If R = 0
AS
I
tAV = (L)(IAS)/(1.3*RATED BV
≠
0
If R
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
1
0.001 0.01 0.1 1 10 100
Qg,GATE CHARGE(nC)
Gate Charge characteristics Figure 8.
tAV, TIME IN AVALANCHE (ms)
WAVEFORMS IN
DESCENDING ORDER:
=40A,ID=5A
I
D
STARTING TJ = 25oC
- VDD)
DSS
- VDD) +1]
DSS
Figure 9. Unclamped Inductive Switching
Capability
5000
1000
C
=
C
RSS
V
= 0V, f = 1MHz
GS
GD
C, CAPACITANCE (pF)
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation characteristics
1000
100
10
OPERATION IN THIS
AREA MAY BE
D
1
0.1
LIMITED BY r
SINGLE PULSE
TJ = MAX RATED
T
= 25oC
C
1
Figure 10.
DS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
Safe Operating Area
, DRAIN CURRENT (A)
I
C
=
CGS + C
ISS
C
OSS
GD
≅
C
+ C
DS
GD
30
®
MOSFET
10µs
100µs
1ms
10ms
DC
60
80
60
40
20
, DRAIN CURRENT (A)
D
I
0
25 50 75 100 125 150 175
VGS = 10V
VGS = 4.5V
TC, CASE TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
FDP8876 Rev. A
, PEAK TRANSIENT POWER (W)
P
800
100
(PK)
60
-5
10
-4
10
-3
10
-2
10
t, PULSE WIDTH (s)
SINGLE PULSE
R
θ
JC
= 25oC
T
J
-1
10
= 2.14oC/W
0
10
10
Figure 12. Normalized Drain to Source Breake
Down Voltage vs Junction Temperature
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Typical Characteristics T
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
= 25°C unless otherwise noted
A
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
qJC
FDP8876 N-Channel PowerTrench
P
DM
t
1
t
2
1/t2
x R
+ T
qJC
C
0
10
1
10
Figure 13.
Normolized Maximum Transient Thermal Impedance
®
MOSFET
FDP8876 Rev. A
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Rev. I17
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