Datasheet FDP5N50F, FDPF5N50FT Datasheet (Fairchild)

tm

UniFET

D

G

S

TO-220F
FDPF Series

G

S

D

TO-220
FDP Series

G D S

FDP5N50F / FDPF5N50FT

N-Channel MOSFET, FRFET

500V, 4.5A, 1.55Ω

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

May 2012

TM

Features

•R

• Low gate charge ( Typ. 11nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A

DS(on)

( Typ. 5pF)

rss

= 25oC unless otherwise noted*

C

Symbol Parameter FDP5N50F FDPF5N50FT Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 85 28 W

C

- Derate above 25

STG

Drain Current

Drain Current - Pulsed (Note 1) 18 18* A

Single Pulsed Avalanche Energy (Note 2) 233 mJ

Avalanche Current (Note 1) 4.5 A

Repetitive Avalanche Energy (Note 1) 8.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor­correction.

= 25oC) 4.5 4.5*

C

= 100oC) 2.7 2.7*

C

o

C 0.67 0.22 W/oC

300

o

o

Thermal Characteristics

Symbol Parameter FDP5N50F FDPF5N50FT Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case 1.4 4.5

Thermal Resistance, Case to Sink Typ. 0.5 -

Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

C

C

©2012 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. C1

www.fairchildsemi.com1

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP5N50F FDP5N50F TO-220 - - 50

FDPF5N50FT FDPF5N50FT TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC-0.6-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.25 1.55 Ω

Forward Transconductance VDS = 20V, ID = 2.25A (Note 4) -4.3-S

Input Capacitance

Output Capacitance - 66 88 pF

Reverse Transfer Capacitance - 5 7.5 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V, ID = 5A

Gate to Source Gate Charge - 3 - nC

Gate to Drain “Miller” Charge - 5 - nC

DS

V

= 10V

GS

( Note 4 , 5)

- 490 650 pF

-1115nC

μA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 22 54 ns

Turn-Off Delay Time - 28 66 ns

Turn-Off Fall Time - 20 50 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =23 mH, I
3: I

≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A

Maximum Pulsed Drain to Source Diode Forward Current - - 18 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 120 - nC

= 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 250V, ID = 5A

V

DD

R

= 25Ω

G

(N ote 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 4.5A - - 1.5 V

SD

= 5A

SD

-1336ns

-65-ns

FDP5N50F / FDPF5N50FT Rev. C1

2

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 10

0.1

1

10

0.04

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0V

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

45678

0.1

1

10

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

20

0.00.40.81.21.6

1

10

0.2

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

50

0 4 8 12 16 20

1.2

1.4

1.6

1.8

2.0

2.2

*Note: TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10

0

250

500

750

1000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

30

036912

0

2

4

6

8

10

*Note: ID = 5A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP5N50F / FDPF5N50FT Rev. C1

3

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Typical Performance Characteristics (Continued)

-75 -25 25 75 125 175

0.8

0.9

1.0

1.1

1.2

*Notes:

1. V

GS

= 0V

2. I

D

= 250μA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

1 10 100 1000

0.01

0.1

1

10

30

30μs

100μs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. T

C

= 25oC

2. T

J

= 150oC

3. Single Pulse

DC

25 50 75 100 125 150

0

2

4

I

D

, Drain Current [A]

TC, Case Temperature [oC]

5

1 10 100 1000

0.01

0.1

1

10

30

30μs

100μs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. T

C

= 25oC

2. T

J

= 150oC

3. Single Pulse

DC

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0.01

0.1

1

0.003

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 1.4oC/W Max.

2. Duty Factor, D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

3

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area
vs. Temperature - FDP5N50F

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

- FDPF5N50FT

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

Figure 11. Transient Thermal Response Curve - FDP5N50F

FDP5N50F / FDPF5N50FT Rev. C1

4

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

0.01

0.1

1

10

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 4.5oC/W Max.

2. Duty Factor, D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

0.005

t

1

P

DM

t

2

Figure 12. Transient Thermal Response Curve - FDPF5N50FT

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

FDP5N50F / FDPF5N50FT Rev. C1

5

www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

FDP5N50F / FDPF5N50FT Rev. C1

6

www.fairchildsemi.com

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDP5N50F / FDPF5N50FT Rev. C1

7

www.fairchildsemi.com

Mechanical Dimensions

TO-220

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

FDP5N50F / FDPF5N50FT Rev. C1

8

www.fairchildsemi.com

Package Dimensions

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

FDP5N50F / FDPF5N50FT Rev. C1

Dimensions in Millimeters

9

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
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WHICH COVERS THESE PRODUCTS.

FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDP5N50F / FDPF5N50FT Rev. C1

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I61