Datasheet FDP5800 Datasheet (Fairchild)

tm

FDP5800
N-Channel Logic Level PowerTrench

60V,80A, 6mΩ

®

MOSFET

FDP5800 N-Channel Logic Level PowerTrench

November 2006

Features

•R

• High performance trench technology for extermly low Rdson

• Low gate Charge

• High power and current handing capability

•RoHs Compliant

= 4.6mΩ (Typ.), VGS = 10V, ID = 80A

DS(on)

Applications

• Motor/ Body Load Control

• Power Train Management

• Injection Systems

• DC-AC Converters and UPS

G

D

TO-220

S

D

G

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

P

D

, T

T

J

STG

*Drain current limited by package

Drain-Source Voltage 60 V

Gate-Source Voltage ±20 V

D r a i n C u r r e n t

Drain Current - Pulsed 320 A

Single Pulsed Avalanche Energy (Note 1) 652 mJ

Power Dissipation (TC = 25oC)

- Derate above 25

Operating and Storage Temperature Range -55 to +175 °C

FDP Series

= 25°C unless otherwise noted*

C

-Continuous (T

-Continuous (T

-Continuous (T

= 25oC) 80 A

C

= 100oC) A 80*

C

= 25oC) 14 A

A

o

C

S

242

1.61

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance , Junction to Case 0.62 °C/W

Thermal Resistance , Junction to Ambient, 1in2 copper pad area 43 °C/W

Thermal Resistance , Junction to Ambient 62.5 °C/W

®

MOSFET

W

W/°C

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP5800 FDP5800 TO220 -- -- 50

©2006 Fairchild Semiconductor Corporation
FDP5800 Rev. A

www.fairchildsemi.com1

FDP5800 N-Channel Logic Level PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ =25oC60 -- --V

V

= 48V

Zero Gate Voltage Drain Current

DS

V

= 0V

GS

Gate-Body Leakage Current, Forward VGS = ±20V, V

= 150°C -- -- 500 µA

T

J

= 0V -- -- ±100 nA

DS

-- -- 1 µA

On Characteristics

V

GS(th)

R

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250µA1.0--2.5V

= 10V , ID = 80A -- 4.6 6.0 mΩ

V

GS

=4.5V , ID = 80A -- 5.9 7.2 mΩ

V

Static Drain-Source On Resistance

GS

= 5V , ID = 80A -- 5.6 7.0 mΩ

V

GS

=10V, ID = 80A

V

GS

T

= 175oC

J

-- 10.4 12.6 mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

g(TH)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance -- 750 1000 pF

Reverse Transfer Capacitance -- 295 445 pF

= 15V,VGS = 0V

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz -- 1.2 -- Ω

Total Gate Charge at 10V VGS = 0V to 10V

Total Gate Charge at 5V VGS = 0V to 5V -- 58 -- nC

Threshold Gate Charge VGS = 0V to 1V -- 7.0 -- nC

Gate to Source Gate Charge -- 23 -- nC

Gate Charge Threshold to Plateau -- 13 -- nC

V

DS

I

D

I

g

= 30V

= 80A

= 1mA

Gate to Drain “Miller” Charge -- 18 -- nC

-- 6890 9160 pF

-- 112 145 nC

®

MOSFET

Switching Characteristics

t

ON

t

d(on)

t

r

t

d(off)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time -- 18 46 ns

Turn-On Rise Time -- 19 47 ns

Turn-Off Delay Time -- 55 120 ns

Turn-Off Fall Time -- 9 28 ns

Turn-Off Time -- 64 138 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 106 -- nC

= 30V, ID = 80A

V

DD

V

= 10V, R

GS

V

= 0V, I

GS

= 0V, I

V

GS

V

= 0V, I

GS

dI

/dt = 100A/µs

F

-- 37 85 ns

= 1.5Ω

GEN

= 80A -- -- 1.25 V

SD

= 40A -- -- 1.0 V

SD

SD

= 60A

-- 58 -- ns

FDP5800 Rev. A

2

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Typical Performance Characteristics

FDP5800 N-Channel Logic Level PowerTrench

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

400

* Notes :

µs Pulse Test

1. 250

= 25oC

2. T

C

100

,Drain Current[A]

D

I

10

5

0.03

0.1 1

VDS,Drain-Source Voltage[V]

V
Top : 10.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Bottom : 3.0 V

GS

1000

VDS = 6V

100

150oC

10

3

,Drain Current[A]

D

I

1

0.1
12345

VGS,Gate-Source Voltage[V]

25oC

-55oC

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

5.5

5.0

VGS = 10V

1000

100

VGS = 0V

150oC

®

MOSFET

[mΩ],

DS(ON)

4.5

R

Drain-Source On-Resistance

4.0
0 40 80 120 160 200

* Note : TJ = 25oC

ID, Drain Current [A]

VGS = 20V

10

, Reverse Drain Current [A]

S

I

1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Body Diode Forward Voltage [V]

25oC

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000

9000

7500

6000

4500

3000

Capacitances [pF]

1500

100

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

C

iss

oss

C

rss

= C

gd

gd

C

oss

C

rss

-1

10

0

10

VDS, Drain-Source Voltage [V]

* Note:

1. V

= 0V

GS

2. f = 1MHz

1

10

30

10

8

VDS = 25V

V

= 35V

DS

= 50V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 20406080100120

* Note : ID = 80A

Qg, Total Gate Charge [nC]

FDP5800 Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

2.4

FDP5800 N-Channel Logic Level PowerTrench

1.1

2.0

1.6

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]

* Notes :

1. V

GS

2. I

= 250µA

D

= 0V

, [Normalized]

1.2

DS(on)

r

0.8

Drain-Source On-Resistance

0.4

-80 -40 0 40 80 120 160 200
TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

3

10

2

10

Operation in This Area

, Drain Current [A]

1

D

is Limited by R

I

10

0

10

0

10

DS(on)

* Notes :

= 25oC

1. T

C

2. T

= 175oC

J

3. Single Pulse

1

VDS, Drain-Source Voltage [V]

10

20µs

100µs

1ms

10ms

DC

10

2

125

CURRENT LIMITED

100

BY PACKAGE

75

50

, Drain Current [A]

D

I

25

0

25 50 75 100 125 150 175

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

1

D = 0.5

* Notes :

1. V

GS

2. I

= 80A

D

= 10V

®

MOSFET

FDP5800 Rev. A

(t),Thermal Response

θJC

Z

0.1

0.01

1E-3

10

0.2

0.1

0.05

0.02

0.01

-5

Single pulse

-4

10

* Notes :

1. Z

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

10

-3

10

-2

10

-1

10

t1, Square Wave Pulse Duration [sec]

4

P

DM

t

1

(t) = 0.62oC/W Max.

θJC

0

10

t

2

1/t2

(t)

θJC

1

10

2

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDP5800 N-Channel Logic Level PowerTrench

Unclamped Inductive Switching Test Circuit & Waveforms

®

MOSFET

FDP5800 Rev. A

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

+

V

V

DS

DS

_

_

L

LL

Sam e Type

Sam e Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

Driver

Driver

G

G

DUT

DUT

I

I

SD

SD

V

V

DD

DD

FDP5800 N-Channel Logic Level PowerTrench

®

MOSFET

V

V

GS

GS

( D riv e r )

( D riv e r )

I

I

SD

SD

( D U T )

( D U T )

V

V

DS

DS

( DUT )

( DUT )

G ate P ulse W idth

G ate P ulse W idth

G ate P ulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, B ody D iode Forw ard C urrent

IFM, B ody D iode Forw ard C urrent

I

I

RM

RM

Body D iode Reverse C urrent

Body D iode Reverse C urrent

Body D iode R ecovery dv/dt

Body D iode R ecovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forw ard Volta

Forw ard Volta

e D ro

e D ro

di/dt

di/dt

10V

10V

V

V

DD

DD

FDP5800 Rev. A

6

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Mechanical Dimensions



FDP5800 N-Channel Logic Level PowerTrench

TO-220

(1.70)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

(1.46)

(1.00)

1.27 ±0.10

9.90 ±0.20

(8.70)

ø3.60 ±0.10

(3.70)(3.00)

(45°)

1.52 ±0.10

2.80 ±0.1015.90 ±0.20

18.95MAX.

4.50 ±0.20

+0.10

1.30

–0.05

®

MOSFET

FDP5800 Rev. A

2.54TYP

±0.20]

[2.54

10.00 ±0.20

0.80 ±0.10

2.54TYP

±0.20]

[2.54

10.08 ±0.30

+0.10

0.50

–0.05

7

2.40 ±0.20

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FDP5800 N-Channel Logic Level PowerTrench

®

MOSFET

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

FDP5800 Rev. A

Rev. I21

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