Page 1
tm
FDP2614
D
G
S
TO-220
G
S
D
200V N-Channel PowerTrench MOSFET
FDP2614 200V N-Channel PowerTrench MOSFET
November 2007
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Description
• 62A, 200V, R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
= 22.9mΩ @VGS = 10 V
DS(on)
Application
• PDP application
Absolute Maximum Ratings
Symbol Parameter Ratings Unit
V
DS
V
GS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 200 V
Gate-Source Voltage ± 30 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 3)
62
39.3
see Figure 9
145 mJ
4.5 V/ns
260
2.1
300 °C
DS(on)
A
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP2614 Rev. A
Thermal Resistance, Junction-to-Case -- 0.48 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tap e Width Quantity
FDP2614 FDP2614 TO-220 - - 50
FDP2614 200V N-Channel PowerTrench MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 62A, di/dt ≤ 100A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 200 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V
ID = 250μA, Referenced to 25°C -- 0.2 -- V/°C
VDS = 200V, VGS = 0V, TJ = 125°C
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V
Static Drain-Source On-Resistance VGS = 10V, ID = 31A -- 22.9 27 mΩ
Forward Transconductance VDS = 10V, ID = 31A
Input Capacitance
Output Capacitance -- 505 675 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
(Note 4)
-- 72 -- S
-- 5435 7230 pF
Reverse Transfer Capacitance -- 11 0 165 pF
Turn-O n Delay Time
Turn-O n Rise Time -- 284 560 ns
Turn-O ff Delay Time -- 103 220 ns
Turn-O ff Fall Time -- 162 335 ns
VDD = 100V, ID = 62A
VGS = 10V, R
GEN
= 25Ω
(Note 4, 5)
Total Gate Charge
Gate-Source Charge -- 35 -- nC
Gate-Drain Charge -- 18 -- nC
VDS = 100V, ID = 62A
VGS = 10V
(Note 4, 5)
-- 77 165 ns
-- 76 99 nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A -- -- 1.2 V
Reverse Recovery Time VGS = 0V, IS = 62A
Reverse Recovery Charge -- 0.81 -- μC
, Starting TJ = 25°C
DSS
dIF/dt =100A/μs (Note 4)
-- 145 -- ns
10
500μAμA
FDP2614 Rev. A
2 www.fairchildsemi.com
Page 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
0.1 1 10
1
10
100
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
500
2468
1
10
100
1000
-55oC
150oC
* Notes :
1. V
DS
= 10V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
0 50 100 150 200
0.02
0.03
0.04
0.05
0.06
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.015
0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
* Notes :
1. V
GS
= 0V
2. I
D
= 250μA
TA = 25oC
TA = 150oC
I
DR
, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0.1 1 10
0
3000
6000
9000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0 20406080100
0
2
4
6
8
10
* Note : ID = 62A
VDS = 40V
V
DS
= 100V
V
DS
= 160V
V
GS
, Gate-Source Voltage [V]
Qg, Total G ate Charge [nC]
FDP2614 200V N-Channel PowerTrench MOSFET
Figure 3. O n - R e s i s t a n c e V a r i a t i o n v s . D r a i n
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Varia-
tion vs. Source Current and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP2614 Rev. A
3 www.fairchildsemi.com
Page 4
FDP2614 200V N-Channel PowerTrench MOSFET
-100 -50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 31A
r
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
110100
0.01
0.1
1
10
100
1000
DC
10 ms
1ms
100 μs
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
400
25 50 75 100 125 150
0
10
20
30
40
50
60
70
I
D
, Drain Current [A]
TC, Case Temperature [oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θJC
(t) = 0.48oC/W Max.
2. Duty Factor, D=t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation vs.
Tempera t u re
Figure 8. On-Resistance Variation vs. Tem-
perature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case-
Tempera t u re
FDP2614 Rev. A
Figure 11. Transient Thermal Response Curve
4 www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDP2614 200V N-Channel PowerTrench MOSFET
FDP2614 Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP2614 200V N-Channel PowerTrench MOSFET
FDP2614 Rev. A
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20]
2.54TYP
[2.54
±0.20]
TO-220
FDP2614 200V N-Channel PowerTrench MOSFET
FDP2614 Rev. A
7 www.fairchildsemi.com
Page 8
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FDP2614 200V N-Channel PowerTrench MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
8 www.fairchildsemi.com8 www.fairchildsemi.com
FDP2614 Rev. A
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