Datasheet FDP18N50 Specification

FDP18N50 / FDPF18N50 / FDPF18N50T

N-Channel UniFETTM MOSFET

500 V, 18 A, 265 mΩ

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

November 2013

Features

•R

• Low Gate Charge (Typ. 45 nC)

• Low C

• 100% Avalanche Tested

= 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A

DS(on)

(Typ. 25 pF)

rss

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

G

D

S

Absolute Maximum Ratings T

Symbol Parameter FDP18N50

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 500 V

Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 18 A

Repetitive Avalanche Energy (Note 1) 23.5 mJ

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

TO-220

C

- Continuous (T

- Derate Above 25°C

G

D

S

= 25°C unless otherwise noted.

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

TO-220F

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

Thermal Characteristics

D

G

S

FDPF18N50 / FDPF18N50T

18

10.8

72 72 * A

945 mJ

235

1.88

300 °C

18 *

10.8 *

38.5

0.3

TM

MOSFET

Unit

A A

W

W/°C

Symbol Parameter FDP18N50

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case, Max. 0.53 3.3 °C/W

Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W

FDPF18N50 / FDPF18N50T

1

Unit

www.fairchildsemi.com

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FDP18N50 FDP18N50 TO-220 Tube N/A N/A 50 units

FDPF18N50 FDPF18N50 TO-220F Tube N/A N/A 50 units

FDPF18N50T FDPF18N50T TO-220F Tube N/A N/A 50 units

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Electrical Characteristics T

= 25°C unless otherwise noted.

C

Symbol Parameter Conditions Min. Typ. Max Unit

Off Characteristics

BV

ΔBV / ΔT

I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 500 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V

I

= 250 μA, Referenced to 25°C--0.5--V/°C

D

V

= 400 V, TC = 125°C

DS

--

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

1

10

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0--5.0V

Static Drain-Source On-Resistance

V

= 10 V, ID = 9 A -- 0.220 0.265 Ω

GS

Forward Transconductance VDS = 40 V, ID = 9 A -- 25 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 330 430 pF

f = 1 MHz

Reverse Transfer Capacitance -- 25 40 pF

-- 2200 2860 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Turn-O n Delay Time VDD = 250 V, ID = 18 A,

V

= 10 V, RG = 25 Ω

Turn-On Rise Time -- 165 340 ns

GS

Turn-Off Delay Time -- 95 200 ns

Turn-Off Fall Time -- 90 190 ns

g

gs

gd

Total Gate Charge VDS = 400 V, ID = 18 A,

V

= 10 V

Gate-Source Charge -- 12.5 -- nC

GS

Gate-Drain Charge -- 19 -- nC

(Note 4)

-- 55 120 ns

-- 45 60 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 18 A,

dI

/dt =100 A/μs

Reverse Recovery Charge -- 5.4 -- μC

F

-- 500 -- ns

μA μA

TM

MOSFET

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 5.2 mH, IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 18 A, di/dt ≤ 200 A/μs, VDD ≤ BV

4. Essentially independent of operating temperature typical characteristics.

, starting TJ = 25°C.

DSS

2

www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

0.1

0.2

0.3

0.4

0.5

0.6

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω], Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

10

0

10

1

10

2

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Volt age [V]

01020304050

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

* Note : ID = 18A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

TM

MOSFET

3

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 9 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 5 0 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS

= 0 V

2. I

D

= 250μA

BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in This Area is Limited by R

DS(on)

* Notes :

1. T

C

= 25 oC

2. T

J

= 150 oC

3. Single Pulse

I

D

, Drain Current [A]

VDS, Drain- Source Voltage [V]

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in This Area is Limited by R

DS(on)

* Notes :

1. T

C

= 25 oC

2. T

J

= 150 oC

3. Single Pulse

I

D

, Drain Current [A]

VDS, Drain- Source Volt age [V]

25 50 75 100 125 150

0

5

10

15

20

I

D

, Drain Current [A]

TC, Case Temperature [oC]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area

- FDP18N50 - FDPF18N50 / FDPF18N50T

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Figure 10. Maximum Drain Current vs. Case Temperature

TM

MOSFET

4

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* No tes :

1. Z

θJC

(t) = 0.53 oC/W Max.

2. D uty F acto r, D =t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

sin g le p u lse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, S qua re W ave P u lse D uratio n [se c ]

t

1

P

DM

t

2

Z

θJC

(t), Thermal Response [

o

C/W]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* No tes :

1. Z

θJC

(t) = 3.3 oC/W Max.

2. D uty F acto r, D =t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, S qua re W ave P u lse D uratio n [se c ]

t

1

P

DM

t

2

Z

θJC

(t), Thermal Response [

o

C/W]

Figure 11-1. Transient Thermal Response Curve - FDP18N50

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Figure 11-2. Transient Thermal Response Curve - FDPF18N50 / FDPF18N50T

TM

MOSFET

5

www.fairchildsemi.com

V

GS

V

DS

10%

90%

t

d(on)tr

t

on

t

off

t

d(off )

t

f

V

DD

10V

V

DS

R

L

DUT

R

G

V

GS

V

GS

V

DS

10%

90%

t

d(on)tr

t

on

t

off

t

d(off )

t

f

V

DD

10V

V

DS

R

L

DUT

R

G

V

GS

IG = const.

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Figure 12. Gate Charge Test Circuit & Waveform

TM

MOSFET

V

GS

Figure 13. Resistive Switching Test Circuit & Waveforms

V

GS

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

6

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

D =

Gate Pulse Width Gate Pulse Period

--------------------------

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

TM

MOSFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

7

www.fairchildsemi.com

Mechanical Dimensions

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

TM

MOSFET

8

www.fairchildsemi.com

Mechanical Dimensions

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

TM

MOSFET

9

www.fairchildsemi.com

TRADEMARKS

®

™

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™

®

AX-CAP

* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FPS™

®

® ®

F-PFS™

®

FRFET Global Power Resource GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™

®

MicroPak2™ MillerDrive™ MotionMax™ mWSaver OptoHiT™ OPTOLOGIC OPTOPLANAR

®

SM

®

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™

®

RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™

®

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS

®

SyncFET™

Sync-Lock™

®*

TinyBoost TinyBuck TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™

®

XS™

®

*

FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

TM

MOSFET

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

10

www.fairchildsemi.com

Rev. I66

Datasheet FDP18N50 Specification

Specifications and Main Features

Frequently Asked Questions

User Manual