Page 1
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
FDMS8558S
N-Channel PowerTrench
®
SyncFET
25 V, 90 A, 1.5 mΩ
Features
Max r
Max r
High performance technology for extremely low r
SyncFETTM Schottky Body Diode
RoHS Compliant
= 1.5 mΩ at VGS = 10 V, ID = 33 A
DS(on)
= 1.7 mΩ at VGS = 4.5 V, ID = 31 A
DS(on)
DS(on)
TM
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
April 2012
®
while maintaining
DS(on)
process.
FDMS8558S N-Channel PowerTrench
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage 12 V
Drain Current -Continuous (Package limited) TC = 25 °C 90
-Pulsed 140
Single Pulse Avalanche Energy (Note 3) 145 mJ
Power Dissipation TC = 25 °C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
= 25 °C (Note 1a) 33
A
= 25 °C (Note 1a) 2.5
A
A -Continuous T
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case TC = 25 °C 1.6
Thermal Resistance, Junction to Ambient TA = 25 °C (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
09OD FDMS8558S Power 56 13’’ 12 mm 3000 units
1
www.fairchildsemi.com
Page 2
FDMS8558S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = +12 V/-8 V, V
I
= 10 mA, referenced to 25 °C 24 mV/°C
D
= 0 V 500 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.4 2.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -3 mV/°C
D
V
= 10 V, ID = 33 A 1.1 1.5
GS
= 4.5 V, ID = 31 A 1.3 1.7
GS
= 10 V, ID = 33 A, TJ = 125 °C 1.6 2.1
V
GS
Forward Transconductance VDS = 5 V, ID = 33 A 317 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1508 pF
Reverse Transfer Capacitance 195 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 Ω
5118 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 8ns
Turn-Off Delay Time 51 ns
= 13 V, ID = 33 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 7ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 38 nC
Gate to Source Gate Charge 10 nC
V
DD
I
= 33 A
D
= 13 V,
Gate to Drain “Miller” Charge 9.7 nC
14 ns
81 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
θJA
by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
of 145 mJ is based on starting TJ = 25 °C, L = 0.9 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 39 A.
3. E
AS
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 49 nC
SS
SF
DS
DF
G
50 °C/W when mounted on a
a)
1 in2 pad of 2 oz copper
V
= 0 V, IS = 2 A (Note 2) 0.6 0.8
GS
= 0 V, IS = 33 A (Note 2) 0.8 1.2
V
GS
= 33 A, di/dt = 300 A/μs
I
F
DF
DS
G
2
SF
θJC
SS
35 ns
is guaranteed by design while R
125 °C/W when mounted on a
b)
minimum pad of 2 oz copper.
V
is determined
θCA
www.fairchildsemi.com
Page 3
FDMS8558S N-Channel PowerTrench
0 0.2 0.4 0.6 0.8
0
20
40
60
80
100
120
140
VGS = 3.5 V
VGS = 3 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 2.5 V
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0 20406080100120140
0
1
2
3
4
5
6
VGS = 2.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 38 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
2345678910
0
1
2
3
4
5
6
TJ = 125 oC
ID = 38 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.21.51.82.12.42.7
0
20
40
60
80
100
120
140
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norm a l i z e d O n - R e sistance
vs Drain Current and Gate Voltage
SyncFET
®
TM
Fi g u re 3. No r m alized O n Resist a n ce
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDMS8558S N-Channel PowerTrench
0 153045607590
0
2
4
6
8
10
ID = 38 A
VDD = 15 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 13 V
0.1 1 10 30
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 100 1000
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
50
100
150
200
Limited by Package
V
GS
= 4.5 V
R
θJC
= 1.6 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100
0.01
0.1
1
10
100
500
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210-110010
1
100 1000
0.1
1
10
100
1000
10000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PUL SE WIDTH (s)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Capa c i t a nce v s D r ain
to Source Voltage
SyncFET
®
TM
Figure 9.
Unc l a mp e d I nd u c t iv e
Switching Capability
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Figure 11. Forward Bias Safe
Operating Area
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 12.
4
Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
Page 5
FDMS8558S N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100 1000
1E-4
1E-3
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
SyncFET
®
TM
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
5
www.fairchildsemi.com
Page 6
700 800 900 1000 1100
-5
0
5
10
15
20
25
30
35
40
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)
0 5 10 15 20 25
10
-6
10
-5
10
-4
10
-3
10
-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
I
DSS
, REVERSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
FDMS8558S N-Channel PowerTrench
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8558S.
Figure 14. FDMS8558S SyncFET
TM
body
diode reverse recovery characteristic
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
TM
Figure 15. SyncFET
body diode reverse
leakage versus drain-source voltage
SyncFET
®
TM
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
6
www.fairchildsemi.com
Page 7
Dimensional Outline and Pad Layout
C
L
L
C
PKG
PKG
5.1 0
4.90
6.25
5.90
C
1.2 7
3.8 1
3.8 6
3.6 1
0.71
0.44
CHA MFE R
CORNER
AS PIN #1
IDEN T MAY
APPEAR AS
OPTIONAL
TOP VIEW
SIDE VIEW
BOTTOM VIEW
1.27
3.81
1.2 7
6.6 1
3.91
4.52
1.27
1234
8567
1
4
8
5
LAND PA TTERN
RECOMMENDATION
12 34
876
0.10 C A B
0.46
0.36
(8X)
4.2 9
4.0 9
5
0.71
0.44
0.77
A
B
(0.39)
0.61
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
DATED OCTOBER 2002.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08AREV6.
SEE
DETAIL A
DETAIL A
SCALE: 2:1
0.05
0.00
0.30
0.20
0.08 C
6.25
5.90
5.85
5.65
5.1 0
4.90
6
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
PIN #1
IDEN T MAY
APPEAR AS
OPTIONAL
SEATING
PLANE
0.10 C
1.10
0.90
OPTION - A (SAWN TYPE)
OPTION - B (PUNCHED TYPE)
KEEP OUT AREA
(1.19)
(1.81)
(0.50)
(3.40)
(0.52)
0.1 5 MAX (2X)
5.10
3.7 5
FDMS8558S N-Channel PowerTrench
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
7
®
SyncFET
TM
www.fairchildsemi.com
Page 8
TRADEMARKS
®
™
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
®
F-PFS™
®
FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®
®
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS8558S N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
8
www.fairchildsemi.com
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