Datasheet FDMS8460 Datasheet (Fairchild)

May 2009

FDMS8460 N-Channel Power Trench

FDMS8460

N-Channel Power Trench® MOSFET

40V, 49A, 2.2m:

Features

 Max r

 Max r

 Advanced Package and Silicon combination for low r

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

= 2.2m: at VGS = 10V, ID = 25A

DS(on)

= 3.0m: at VGS = 4.5V, ID = 21.7A

DS(on)

Top

Power 56

DS(on)

Bottom

S

S

D

D

D

D

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process thant has

Application

 DC - DC Conversion

S

Pin 1

G

5

D

D

6

D

7

8

D

G

4

S

3

S

2

1

S

tm

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

TJC

R

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8460 FDMS8460 Power 56 13’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 160

Single Pulse Avalanche Energy (Note 3) 864 mJ

Power Dissipation TC = 25°C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

1

= 25°C unless otherwise noted

A

= 25°C 167

C

= 25°C (Note 1a) 25

A

= 25°C (Note 1a) 2.5

A

1

A

W

°C/W

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FDMS8460 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 40 V

Breakdown Voltage Temperature
Coefficient

= 250PA, referenced to 25°C 32 mV/°C

I

D

Zero Gate Voltage Drain Current VGS= 0V, VDS = 32V, 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.9 3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -7.5 mV/°C

I

D

V

= 10V, ID = 25A 2.0 2.2

GS

= 4.5V, ID = 21.7A 2.6 3.0

GS

= 10V, ID = 25A, TJ = 125°C 2.6 3.3

V

GS

Forward Transconductance VDD = 5V, ID = 25A 137 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 1470 1955 pF

Reverse Transfer Capacitance 170 250 pF

= 20V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.4 :

5415 7205 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

Turn-On Delay Time

Rise Time 919ns

Turn-Off Delay Time 48 78 ns

= 20V, ID = 25A,

V

DD

V

= 10V, R

GS

GEN

= 6:

Fall Time 714ns

g

g

gs

gd

Total Gate Charge VGS = 0V to 10V

Total Gate Charge VGS = 0V to 4.5V 36 51 nC

Gate to Source Charge 15 nC

V
I

= 20V,

DD

= 25A

D

Gate to Drain “Miller” Charge 10 nC

19 35 ns

78 110 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting T

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C1

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 40 64 nC

= 25°C, L = 3mH, IAS = 24A, VDD = 40V, VGS = 10V

J

V

GS

V

GS

= 25A, di/dt = 100A/Ps

I

F

a. 50°C/W when mounted on a

2

pad of 2 oz copper.

1 in

= 0V, IS= 25A (Note 2) 0.8 1.3

= 0V, IS= 2.1A (Note 2) 0.7 1.2

53 85 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper.

2

TCA

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V

is determined by

FDMS8460 N-Channel Power Trench

Typical Characteristics T

160

VGS = 4V

120

VGS = 4.5V

80

40

, DRAIN CURRENT (A)

D

I

0

0123

Figure 1.

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 10V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

ID = 25A
V

= 10V

GS

T

, JUNCTION TEMPERATURE (

J

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = 3.5V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

VGS = 3V

o

C)

5

PULSE DURATION = 80Ps

VGS = 3V

DUTY CYCLE = 0.5%MAX

4

VGS = 3.5V

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0.5

04080120160

I

, DRAIN CURRENT(A)

D

VGS= 4V

V

=4.5V

GS

VGS=10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

10

ID= 25A

8

(m:)

6

DRAIN TO

,

4

DS(on)

r

2

SOURCE ON-RESISTANCE

0

246810

Figure 4.

TJ= 25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

TJ= 125oC

Source Voltage

®

MOSFET

160

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

120

VDS= 5V

TJ= 150oC

80

40

, DRAIN CURRENT (A)

D

I

0

012345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

1

TJ = 25oC

TJ = -55oC

800

V

= 0V

GS

100

10

1

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

3

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FDMS8460 N-Channel Power Trench

Typical Characteristics T

= 25°C unless otherwise noted

J

10

ID= 25A

VDD = 15V

8

VDD = 20V

6

V

= 25V

4

DD

2

, GATE TO SOURCE VOLTAGE(V)

GS

V

0

0 20406080

Figure 7.

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

40

10

TJ= 125oC

, AVALANCHE CURRENT(A)

AS

I

1

0.01 0.1 1 10 100 1000

tAV, TIME IN AVALANCHE(ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

TJ= 25oC

10000

1000

CAPACITANCE (pF)

100

f = 1MHz

= 0V

V

GS

30

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

200

150

VGS= 10V

100

V

= 4.5V

GS

, DRAIN CURRENT (A)

50

D

I

R

Limited by Package

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (

C

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

= 1.2oC/W

TJC

o

C)

Current vs Case Temperature

C

iss

C

oss

C

rss

40

®

MOSFET

400

100

10

THIS AREA IS

1

LIMITED BY r

, DRAIN CURRENT (A)

D

0.1

I

0.01

0.01 0.1 1 10 100

DS(on)

SINGLE PULSE
T

= MAX RATED

J

R

= 125oC/W

TJA

T

= 25oC

A

VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

1

1ms

10ms

100ms

1s

10s

DC

200

1000

VGS = 10V

100

SINGLE PULSE
R

= 125oC/W

TJA

T

= 25oC

A

10

), PEAK TRANSIENT POWER (W)

1

PK

P(

0.5

-3

-2

10

10

Figure 12.

-1

10

t, PULSE WIDTH ( sec)

110

S i n g l e P u l s e M a x i m u m

100 1000

Power Dissipation

4

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FDMS8460 N-Channel Power Trench

Typical Characteristics T

2

1

TJA

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

1E-3

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-3

10

10

-2

= 25°C unless otherwise noted

J

SINGLE PULSE

R

= 125oC/W

TJA

-1

10

t, RECTANGULAR PULSE DURATION (sec)

110

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

TJA

TJA

A

100 1000

®

MOSFET

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

1

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS8460 N-Channel Power Trench

®

MOSFET

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

1

6

www.fairchildsemi.com

TRADEMARKS

t

®

m

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

Auto-SPM™
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EfficentMax™
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™*

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®

m

®

®

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*

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Global Power Resource
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MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR

®

tm

PDP SPM™
Power-SPM™

®

SM

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
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Sync-Lock™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS8460 N-Channel Power Trench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I40

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

1

7

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