Page 1
FDMS7682
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
30 V, 6.3 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 6.3 mΩ at VGS = 10 V, ID = 14 A
DS(on)
= 10.4 mΩ at VGS = 4.5 V, ID = 11 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
July 2010
, fast switching speed and body
DS(on)
FDMS7682 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 80
Single Pulse Avalanche Energy (Note 3) 29 mJ
Power Dissipation TC = 25 °C 33
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 59
C
= 25 °C (Note 1a) 16
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3.7
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7682 FDMS7682 Power 56 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMS7682 Rev.C
1
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Page 2
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 15 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA1.251.93.0V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 14 A 5.2 6.3
GS
= 4.5 V, ID = 11 A 8.0 10.4
GS
= 10 V, ID = 14 A, TJ = 125 °C 7.0 8.5
V
GS
Forward Transconductance VDS = 5 V, ID = 14 A 70 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 479 640 pF
Reverse Transfer Capacitance 50 75 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.7 2.4 Ω
1416 1885 pF
FDMS7682 N-Channel PowerTrench
mΩV
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 2.7 10 ns
Turn-Off Delay Time 22 35 ns
= 15 V, ID = 14 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 2.2 10 ns
To tal Gate Charge VGS = 0 V to 10 V
To tal Gate Charge VGS = 0 V to 4.5 V 9.9 14 nC
Gate to Source Charge 4.3 nC
Gate to Drain “Miller” Charge 2.8 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.74 1.2
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 ma terial. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 10 21 nC
Reverse Recovery Time
Reverse Recovery Charge 17 30 nC
a)
50 °C/W when mounted on a
1 in2 pad of 2 oz copper
GS
= 0 V, IS = 14 A (Note 2) 0.83 1.3
V
GS
= 14 A, di/dt = 100 A/μs
I
F
= 14 A, di/dt = 300 A/μs
I
F
V
DD
I
= 14 A
D
= 15 V,
is guaranteed by design while R
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
9.4 19 ns
21 30 nC
27 43 ns
20 36 ns
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7682 Rev.C
2
www.fairchildsemi.com
Page 3
FDMS7682 N-Channel PowerTrench
0123
0
20
40
60
80
VGS = 4.5 V
VGS = 10 V
VGS = 3.5 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 20406080
0
1
2
3
4
5
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 3.5 V
VGS = 4 V
VGS = 5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 14 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTAN CE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
5
10
15
20
25
ID = 14 A
TJ = 25 oC
TJ = 125 oC
V
GS
, GATE TO S O URCE VO LTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
20
40
60
80
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VO LTAGE (V)
0.20.40.60.81.01.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Nor ma liz ed On- Resis tance
vs Drain Current and Gate Voltage
Fi gure 3. Normalized On Resistance
vs Junction Temperature
FDMS7682 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS7682 N-Channel PowerTrench
0 4 8 12162024
0
2
4
6
8
10
ID = 14 A
VDD = 20 V
V
DD
= 15 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 10 V
0.1 1 10 30
10
100
1000
4000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOL TAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
15
30
45
60
Limited by P ackage
V
GS
= 4.5 V
R
θJC
= 3.7 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
100 us
1 ms
10 ms
100 ms
DC
10 s
1 s
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
500
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
®
MOSFET
Cap aci tan ce v s D rai n
to Source Voltage
Figure 9.
Unc l am p ed I ndu c tiv e
Switching Capability
FDMS7682 Rev.C
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma ximum Co ntinu ous Drai n
Current vs Case Temperature
Figure 12.
Single Pulse Maxi mum
Power Dissipation
4
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Page 5
FDMS7682 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
FDMS7682 Rev.C
5
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Page 6
FDMS7682 N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
FDMS7682 Rev.C
6
www.fairchildsemi.com
Page 7
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tm
®
tm
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intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
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®
®
®
®
®
®
*
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®
FRFET
Global Power Resource
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MICROCOUPLER™
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MicroPak™
MicroPak2™
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®
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Motion-SPM™
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®
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®
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QS™
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Saving our world, 1mW/W/kW at a time™
SignalWise™
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Sync-Lock™
®
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™
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®*
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS7682 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semicondu ctor products a re experiencing counterfe iting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS7682 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I48
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