Page 1
FDMS7672
N-Channel PowerTrench® MOSFET
30 V, 5.0 mΩ
Features
Max r
Max r
Advanced Package and Silicon design for low r
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 5.0 mΩ at VGS = 10 V, ID = 19 A
DS(on)
= 6.9 mΩ at VGS = 4.5 V, ID = 15 A
DS(on)
DS(on)
and high
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
April 2009
, fast switching speed and body
DS(on)
FDMS7672 N-Channel PowerTrench
®
MOSFET
Top
D
Bottom
D
D
D
Pin 1
S
S
S
G
D
5
D
6
D
7
8
D
4
3
2
1
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 28
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 90
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 48
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 80
C
= 25 °C (Note 1a) 19
A
= 25 °C (Note 1a) 2.5
A
Thermal Characteristics
G
S
S
S
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 2.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7672 FDMS7672 Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7672 Rev.
D
°C/W
1
www.fairchildsemi.com
Page 2
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 µA, referenced to 25 °C 15 mV/°C
D
= 0 V 1 µA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.25 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -7 mV/°C
D
V
= 10 V, ID = 19 A 3.6 5.0
GS
= 4.5 V, ID = 15 A 5.2 6.9
GS
= 10 V, ID = 19 A, TJ = 125 °C 4.9 6.8
V
GS
Forward Transconductance VDS = 5 V, ID = 19 A 64 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 685 910 pF
Reverse Transfer Capacitance 90 130 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
2225 2960 pF
Gate Resistance 0.7 1.5 Ω
FDMS7672 N-Channel PowerTrench
mΩV
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 510ns
Turn-Off Delay Time 25 40 ns
= 15 V, ID = 19 A,
V
DD
= 10 V, R
V
GS
GEN
Fall Time 410ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 14 19 nC
Gate to Source Charge 7.6 nC
Gate to Drain “Miller” Charge 3.7 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.7 0.95
V
SD
t
rr
Q
rr
t
a
t
b
S Softness (t
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 14 24 nC
Reverse Recovery Fall Time 15 nC
Reverse Recovery Rise Time 17 nC
) 1.1
b/ta
Reverse Recovery Time
Reverse Recovery Charge 25 40 nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
GS
= 0 V, IS = 19 A (Note 2) 0.8 1.1
V
GS
= 19 A, di/dt = 100 A/µs
I
F
= 19 A, di/dt = 300 A/µs
I
F
= 6 Ω
V
DD
= 19 A
I
D
= 15 V,
θJC
13 23 ns
31 44 nC
32 51 ns
26 42 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. E
of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 17 A.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7672 Rev.
D
2
www.fairchildsemi.com
Page 3
FDMS7672 N-Channel PowerTrench
Typical Characteristics T
90
60
30
DRAIN CURRENT (A)
,
D
I
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.6
ID = 19 A
= 10 V
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
VGS = 10 V
VGS = 5 V
PULSE DURATION = 80 µs
VGS = 4.5 V
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
DUTY CYCLE = 0.5% MAX
On Region Characteristics Figure 2.
T
,
JUNCTION TE MPERATURE (oC)
J
= 25 °C unless otherwise noted
J
VGS = 4 V
VGS = 3.5 V
6
5
VGS = 3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
VGS = 4 V
3
NORMALIZED
2
VGS = 4.5 V
1
V
DRAIN TO SOURCE ON-RESISTANCE
0
0306090
I
VGS = 5 V
, DRAIN CURRENT (A)
D
GS
= 10 V
Nor m a l i z e d O n-Resis t a n c e
vs Drain Current and Gate Voltage
16
)
Ω
m
(
12
8
DRAIN TO
,
DS(on)
r
4
SOURCE ON-RESISTANCE
0
246810
ID = 19 A
TJ = 25 oC
V
,
GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
®
MOSFET
, DRAIN CURRENT (A)
D
I
FDMS7672 Rev.
Fi g ure 3 . No r mali zed O n Res i sta n ce
vs Junction Temperature
90
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
60
TJ = 150 oC
30
TJ = 25 oC
0
012345
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
Figure 5. Transfer Characteristics
D
Figure 4.
On-Re sistance vs Gate to
Source Voltage
100
V
= 0 V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Sou rce to Drain Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
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Page 4
FDMS7672 N-Channel PowerTrench
Typical Characteristics T
10
ID = 19 A
8
VDD = 10 V
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 4 8 121620242832
Figure 7.
50
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
= 25 °C unless otherwise noted
J
V
= 15 V
DD
VDD = 20 V
TJ = 100 oC
5000
1000
CAPACITANCE (pF)
100
f = 1 MHz
= 0 V
V
GS
50
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
to Source Voltage
90
60
V
= 4.5 V
GS
30
DRAIN CURRENT (A)
,
D
I
Limited by Package
0
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
R
θ
JC
V
= 10 V
GS
= 2.6 oC/W
o
(
C
)
C
iss
C
oss
C
rss
®
MOSFET
200
100
, DRAIN CURRENT (A)
D
0.1
I
0.01
FDMS7672 Rev.
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
10
THIS AREA IS
1
LIMITED BY r
DS(on)
SINGLE PULSE
T
= MAX RATED
J
= 125 oC/W
R
θ
JA
= 25 oC
T
A
0.01 0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
Figure 11. Forward Bias Safe
Operating Area
D
200
Figure 10.
Ma xi mum Co nti nuous Drain
Current vs Case Temperature
1000
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
VGS = 10 V
100
SINGLE PULSE
R
T
10
1
0.5
10-410-310-210-1110
Figure 12.
t, PULSE WIDTH (sec)
Single Pu ls e Maximum
= 125 oC/W
θ
JA
= 25 oC
A
100 1000
Power Dissipation
4
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Page 5
FDMS7672 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
Figure 13.
di/dt = 300 A/µs
NORMALIZED THERMAL
θJA
Z
IMPEDANCE,
0.001
20
16
12
0.1
0.01
= 25 °C unless otherwise noted
J
NOTES:
SINGLE PULSE
= 125 oC/W
R
θJA
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
110
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
P
DM
t
1
t
2
2
x R
+ T
θJA
θJA
A
100 1000
®
MOSFET
8
4
CURRENT (A)
0
-4
0 25 50 75 100 125 150
TIMES (nS)
Figure 14.
Body Diode Reverse Recovery
Characteristics
FDMS7672 Rev.
D
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMS7672 N-Channel PowerTrench
®
MOSFET
FDMS7672 Rev.
D
6
www.fairchildsemi.com
Page 7
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild S emiconductor and/or its gl obal subsidiaries, a nd is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
*
®
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
PDP SPM™
Power-SPM™
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
®
®
®
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS7672 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the bo dy or (b ) sup port or su stain li fe,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. Al l manufactures of semiconductor products are exper iencing counterfeiting of th eir
parts. Customers who inadvertently purchase counterfeit parts ex perience many probl ems such a s loss of b rand reputa tio n, subst an dar d p erforman ce , fai led
application, and increased cost of production and manufacturing delays. Fairchi ld is t aking stro ng measures to prote ct ourselves and our customers from the
proliferation of counterfeit parts. Fairchild st rongly encour ages customers to purcha se Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
FDMS7672 Rev.D 7 www.fairchildsemi.com
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