Page 1
FDMS7670AS
N-Channel PowerTrench® SyncFET
30 V, 42 A, 3 m:
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 3.0 m: at VGS = 10 V, ID = 21 A
DS(on)
= 3.2 m: at VGS = 7 V, ID = 19 A
DS(on)
DS(on)
March 2010
TM
General Description
The FDMS7670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS7670AS N-Channel PowerTrench
®
SyncFET
TM
Top
D
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.8 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 98 mJ
Power Dissipation TC = 25 °C 65
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 113
C
= 25 °C (Note 1a) 22
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 1.9
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7670AS FDMS7670AS Power 56 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMS7670AS Rev.C1
°C/W
1
www.fairchildsemi.com
Page 2
FDMS7670AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
(Note 2)
I
= 10 mA, referenced to 25 °C 14 mV/°C
D
= 0 V 500 PA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
StaticDrain to Source On Resistance
= 10 mA, referenced to 25 °C -5 mV/°C
I
D
= 10 V, ID = 21 A 2.4 3.0
V
GS
V
= 7 V, ID = 19 A 2.5 3.2
GS
= 4.5 V, ID = 17 A 3.0 3.5
V
GS
= 10 V, ID = 21 A, TJ= 125 °C 3.0 3.8
V
GS
Forward Transconductance VDS = 5 V, ID = 21 A 300 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1175 1565 pF
Reverse Transfer Capacitance 110 165 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.3 2.6 :
3175 4225 pF
m:
®
SyncFET
TM
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 612ns
Turn-Off Delay Time 35 56 ns
= 15 V, ID = 21 A,
V
DD
V
= 10 V, R
GS
GEN
Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 22 31 nC
Gate to Source Gate Charge 8.5 nC
Gate to Drain “Miller” Charge 4.9 nC
Drain-Source Diode Characteristics
V
= 0 V, IS= 2 A (Note 2) 0.43 0.7
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 41 67 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
GS
= 0 V, IS= 21 A (Note 2) 0.75 1.2
V
GS
= 21 A, di/dt = 300 A/ Ps
I
F
= 6 :
V
DD
I
= 21 A
D
= 15 V,
TJC
14 25 ns
47 66 nC
35 56 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
TCA
V
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7670AS Rev.C1
www.fairchildsemi.com2
Page 3
FDMS7670AS N-Channel PowerTrench
Typical Characteristics T
150
VGS = 3.5 V
120
90
60
DRAIN CURRENT (A)
,
30
D
I
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.6
ID = 21 A
1.5
V
= 10 V
GS
1.4
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.7
-75 -50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
T
, JUNCTION TEMPERATURE (
J
= 25 °C unless otherwise noted
J
VGS = 3 V
o
C)
3.5
3.0
VGS = 3 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
2.5
VGS = 3.5 V
2.0
VGS=4 V
1.5
NORMALIZED
VGS = 4.5 V
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0306090120150
I
,
DRAIN CURRENT (A)
D
VGS=10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
10
)
:
m
8
(
ID= 21 A
6
DRAIN TO
,
4
DS(on)
r
2
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
SyncFET
TM
150
120
90
60
, DRAIN CURRENT (A)
30
D
I
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Figure 5. Transfer Characteristics
FDMS7670AS Rev.C1
PULSE DURATION = 80Ps
DUTY CYCLE = 0 .5% MAX
V
= 5 V
DS
TJ= 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
200
100
V
= 0 V
GS
10
TJ= 125 oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
TJ = 25 oC
TJ = -55 oC
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
www.fairchildsemi.com3
Page 4
FDMS7670AS N-Channel PowerTrench
Typical Characteristics T
10
ID= 21 A
8
VDD = 10 V
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 1020304050
Qg, GATE CHARGE (nC)
Figure 7.
40
10
Gate Charge Characteristics Figure 8.
TJ= 25 oC
= 25 °C unless otherwise noted
J
V
= 20 V
DD
VDD = 15 V
TJ= 100 oC
5000
1000
CAPACITANCE (pF)
f = 1 MHz
100
V
= 0 V
GS
60
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
120
90
60
VGS= 4.5 V
VGS= 10 V
C
iss
C
oss
C
rss
®
SyncFET
TM
TJ= 125 oC
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
200
100
10
THIS AREA IS
1
LIMITED BY r
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100
DS(on)
SINGLE PULSE
= MAX RATED
T
J
R
= 125 oC/W
T
JA
= 25 oC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
100 Ps
1 ms
10 ms
100 ms
1 s
10 s
DC
300
200
DRAIN CURRENT (A)
,
30
D
I
R
Limited by Package
0
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
= 1.9 oC/W
T
JC
o
(
C
)
Current vs Case Temperature
10000
1000
100
10
SINGLE PULSE
PEAK TRANSIENT POWER (W)
R
= 125 oC/W
T
,
)
PK
(
P
JA
= 25 oC
T
1
A
0.5
10-410-310-210
Figure 12.
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
-1
110
Power Dissipation
VGS = 10 V
100 1000
FDMS7670AS Rev.C1
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Page 5
FDMS7670AS N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
JA
NORMALIZED THERMAL
T
0.01
IMPEDANCE, Z
0.001
0.0001
0.05
0.02
0.01
SINGLE PULSE
R
T
-4
10
-3
10
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
= 125 oC/W
JA
-2
10
t, RECTANGULAR PULSE DURATION (sec)
-1
10
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
TJA
x R
110
t
1
t
2
2
+ T
TJA
A
100 1000
®
SyncFET
TM
FDMS7670AS Rev.C1
www.fairchildsemi.com5
Page 6
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7670AS.
25
20
15
di/dt = 300 A/Ps
10
CURRENT (A)
5
0
-5
0306090120150
TIME (ns)
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
-2
10
-3
10
-4
10
-5
10
, REVERSE LEAKAGE CURRENT (A)
-6
10
DSS
I
0 5 10 15 20 25 30
TJ= 125 oC
TJ= 100 oC
TJ= 25 oC
VDS, REVERSE VOLTAGE (V)
FDMS7670AS N-Channel PowerTrench
®
SyncFET
TM
Figure 14. FDMS7670AS SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
FDMS7670AS Rev.C1
www.fairchildsemi.com6
Page 7
Dimensional Outline and Pad Layout
FDMS7670AS N-Channel PowerTrench
®
SyncFET
TM
FDMS7670AS Rev.C1
www.fairchildsemi.com7
Page 8
TRADEMARKS
t
®
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
m
®
®
®
®
*
®
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
tm
®
PDP SPM™
Power-SPM™
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
®
®
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
PSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
t
®
®
XS™
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS7670AS N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS7670AS Rev.C1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
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