Page 1
FDMS7658AS
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 1.9 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.9 mΩ at VGS = 10 V, ID = 28 A
DS(on)
= 2.2 mΩ at VGS = 7 V, ID = 26 A
DS(on)
DS(on)
General Description
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS7658AS N-Channel PowerTrench
December 2011
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.5 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 162 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 177
C
= 25 °C (Note 1a) 29
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS7658AS Rev.C1
FDMS7658AS FDMS7658AS Power 56 13 ’’ 12 mm 3000 units
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
www.fairchildsemi.com
Page 2
FDMS7658AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
= 10 mA, referenced to 25 °C 23 mV/°C
I
D
= 0 V 500 μA
GS
= 0 V 100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 28 A 181 S
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 28 A 1.5 1.9
GS
= 7 V, ID = 26 A 1.7 2.2
V
GS
= 4.5 V, ID = 23 A 1.9 2.4
V
GS
= 10 V, ID = 28 A, TJ = 125 °C 2.0 2.6
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 2020 2685 pF
Reverse Transfer Capacitance 150 230 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.4 0.9 Ω
5525 7350 pF
mΩ
®
SyncFET
TM
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 8 17 ns
Turn-Off Delay Time 43 70 ns
V
= 15 V, ID = 28 A,
DD
= 10 V, R
V
GS
GEN
Fall Time 5 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 35 49 nC
Gate to Source Gate Charge 16.4 nC
Gate to Drain “Miller” Charge 6.6 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.38 0.9
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 73 117 nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
GS
= 0 V, IS = 28 A (Note 2) 0.74 1.3
V
GS
= 28 A, di/dt = 300 A/μs
I
F
= 6 Ω
V
DD
= 28 A
I
D
= 15 V,
θJC
20 36 ns
78 109 nC
46 75 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 162 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 18 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 28 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7658AS Rev.C1
2
www.fairchildsemi.com
Page 3
FDMS7658AS N-Channel PowerTrench
0.00.51.01.52.0
0
30
60
90
120
150
VGS = 3.5 V
VGS = 10 V
VGS = 3 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0 .5% MAX
VGS = 4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 30 60 90 120 150
0
1
2
3
4
5
VGS = 4 V
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 10 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 28 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
2
4
6
8
TJ = 125 oC
ID = 28 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
300
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
SyncFET
TM
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
FDMS7658AS Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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Page 4
FDMS7658AS N-Channel PowerTrench
0 20406080
0
2
4
6
8
10
ID = 28 A
VDD = 15 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 20 V
0.1 1 10 30
50
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100 500
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TI ME IN AV ALANCHE ( ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
30
60
90
120
150
180
Limited by Pack age
R
θJC
= 1.4 oC/W
V
GS
= 4.5 V
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
c
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
200
1 s
DC
100 ms
10 ms
1 ms
10 s
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10-210
-1
110
100 1000
0.5
1
10
100
1000
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Fi gure 8.
= 25 °C unless otherwise noted
J
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
SyncFET
TM
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
FDMS7658AS Rev.C1
F ig u re 1 1. F or w ar d B ia s Sa f e
erating Area
Op
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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Page 5
FDMS7658AS N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
SyncFET
TM
FDMS7658AS Rev.C1
5
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Page 6
Typical Characteristics (continued)
0 5 10 15 20 25 30
10
-6
10
-5
10
-4
10
-3
10
-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
I
DSS
, REVERSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
0 50 100 150 200
-5
0
5
10
15
20
25
30
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7658AS.
FDMS7658AS N-Channel PowerTrench
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
®
SyncFET
TM
Figure 14. FDMS7658AS SyncFET body
diode reverse recovery characteristic
FDMS7658AS Rev.C1
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
6
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Page 7
FDMS7658AS N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
SyncFET
TM
FDMS7658AS Rev.C1
7
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Page 8
®
™
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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®
FACT
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FAST
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Marking Small Speakers Sound Louder
and Better™
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®
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QS™
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RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
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Sync-Lock™
®
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®
®
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®*
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TRUECURRENT
μSerDes™
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®
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS7658AS N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDMS7658AS Rev.C1
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