Datasheet FDMS7650 Datasheet (Fairchild)

Bottom

Top

Pin 1

S

G

S

S

D

D

D

D

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

Power 56

FDMS7650

N-Channel PowerTrench® MOSFET

30 V, 100 A, 0.99 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 0.99 mΩ at VGS = 10 V, ID = 36 A

DS(on)

= 1.55 mΩ at VGS = 4.5 V, ID = 32 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low r

Applications

 OringFET
 Synchronous rectifier

DS(on)

FDMS7650 N-Channel PowerTrench

January 2012

.

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 100

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 544 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

C

= 25 °C 232

C

= 25 °C (Note 1a) 36

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7650 FDMS7650 Power 56 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

1

www.fairchildsemi.com

FDMS7650 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 15 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.93V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 36 A 0.8 0.99

GS

= 4.5 V, ID = 32 A 1.1 1.55

GS

= 10 V, ID = 36 A, TJ = 125 °C 1.1 1.7

V

GS

Forward Transconductance VDS = 5 V, ID = 36 A 267 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 3050 4055 pF
Reverse Transfer Capacitance 240 360 pF
Gate Resistance 1.4 3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 24 38 ns
Turn-Off Delay Time 83 133 ns
Fall Time 21 34 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 63 88 nC
Gate to Source Charge 34 nC
Gate to Drain “Miller” Charge 13 nC

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

= 15 V, ID = 36 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 36 A

D

= 15 V,

11250 14965 pF

28 45 ns

149 209 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 2.1 A (Note 2) 0.7 1.2

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 56 90 nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

GS

= 0 V, IS = 36 A (Note 2) 0.8 1.3

V

GS

= 36 A, di/dt = 100 A/μs

I

F

2

69 97 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

V

is determined by

θCA

www.fairchildsemi.com

FDMS7650 N-Channel PowerTrench

0 0.5 1.0 1.5 2.0

0

40

80

120

160

200

VGS = 4.5 V

VGS = 10 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 3.5 V

VGS = 4 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 40 80 120 160 200

0

1

2

3

4

5

6

7

V

GS

= 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 10 V

VGS = 3 V

VGS = 4 V

V

GS

= 3.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 36 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

2

4

6

8

10

ID = 36A

TJ = 25 oC

TJ = 125 oC

V

GS

, GATE TO S OURCE VOLTAGE ( V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1234

0

40

80

120

160

200

V

DS

= 3 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E VO LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

www.fairchildsemi.com

FDMS7650 N-Channel PowerTrench

0 40 80 120 160

0

2

4

6

8

10

Qg, GATE CHARGE (nC)

V

GS

, GATE TO SOURCE VOLTAGE (V)

ID = 36 A

VDD = 20 V

V

DD

= 10 V

VDD = 15 V

0.1 1 10 30

100

1000

10000

20000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

10-310

-2

10

-1

11010210

3

1

10

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALA NCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

100

25 50 75 100 125 150

0

100

200

300

Limited by Package

R

θJC

= 1.2 oC/W

V

GS

= 4.5 V

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

c

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100200

0.01

0.1

1

10

100

500

10 ms

10 s

100 ms

DC

1 s

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10

-3

10

-2

10

-1

110

100 1000

1

10

100

1000

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

®

MOSFET

Capacitance vs Drain

to Source Voltage

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

Figure 11. Forward Bias Safe

Op

erating Area

Figure 10.

Ma xi mum Co nti nuous Drain

Current vs Case Temperature

Figure 12.

Single Pu ls e M aximum

Power Dissipation

4

www.fairchildsemi.com

FDMS7650 N-Channel PowerTrench

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS7650 N-Channel PowerTrench

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

6

www.fairchildsemi.com

TRADEMARKS

®

™

tm

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its globa l subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

2Cool™
AccuPower™
AX-CAP™*

®

BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™

®

®

®

®
®

®

*

®

F-PFS™

®

FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

SM

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™

®

®

®

®

®

®*

The Power Franchise

TinyBoost™
TinyBuck™
TinyCalc™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™

®

TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™

®

®

®

*

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS7650 N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experienci ng counterfeiting of their
parts. Customers who inadvertently purchase counterfeit par ts e xperien ce man y prob lems such as loss of brand re put ati on, subst anda rd performance , failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild st rongly encourage s cust omers to purchase Fair child parts either dire ctly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and en courage our cu stomers to d o their part in sto pping this practice by buying d irect or from authori zed distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any ti me without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I61

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

7

www.fairchildsemi.com